BLP8G10S-45PY

BLP8G10S-45P; BLP8G10S-45PG Power LDMOS transistor Rev. 4 — 29 October 2018 Product data sheet 1. Product profile 1.1 General description The BLP8G10S-45P and BLP8G10S-45PG are dual path, 45 W LDMOS power transistors for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Application performance Typical RF performance at Tcase = 25 °C; IDq = 224 mA in common source class-AB production circuit. Test signal 2-carrier W-CDMA [1] f VDS PL(AV) Gp ηD ACPR (MHz) (V) (W) (dB) (%) (dBc) 960 28 2.5 20.8 19.8 49 [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01% probability on CCDF; carrier spacing = 5 MHz; per section unless otherwise specified. 1.2 Features and benefits        High efficiency Excellent ruggedness Designed for broadband operation (700 MHz to 1000 MHz) Excellent thermal stability High power gain Integrated ESD protection For RoHS compliance see the product details on the Ampleon website 1.3 Applications  W-CDMA  LTE  GSM BLP8G10S-45P; BLP8G10S-45PG Power LDMOS transistor 2. Pinning information Table 2. Pin Pinning Description Simplified outline Graphic symbol BLP8G10S-45P (SOT1223-4) 1 drain 1 2 drain 2 3 gate 2 4 gate 1 5 4 1 3 4 5 3 [1] source 1 2 2 aaa-007625 BLP8G10S-45PG (SOT1224-4) 1 drain 1 2 drain 2 3 gate 2 4 gate 1 5 1 4 3 4 5 3 [1] source 1 2 2 aaa-007625 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLP8G10S-45P - plastic, heatsink small outline package; 4 leads (flat) SOT1223-4 plastic, heatsink small outline package; 4 leads SOT1224-4 BLP8G10S-45PG - 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Min Max Unit VDS drain-source voltage - 65 V VGS gate-source voltage 0.5 +13 V Tstg storage temperature Tj junction temperature [1] Tcase case temperature [1] [1] BLP8G10S-45P_8G10S-45PG Product data sheet 65 +150 C - 225 C - 150 C Continuous use at maximum temperature will affect the reliability. All information provided in this document is subject to legal disclaimers. Rev. 4 — 29 October 2018 © Ampleon Netherlands B.V. 2018. All rights reserved. 2 of 16 BLP8G10S-45P; BLP8G10S-45PG Power LDMOS transistor 5. Thermal characteristics Table 5. Thermal characteristics Values specified for entire device. Symbol Parameter Rth(j-case) thermal resistance from junction to case Conditions Typ Unit Tcase = 85 C; PL = 5 W 0.85 K/W 6. Characteristics Table 6. DC characteristics Tcase = 25 °C; per section unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.4 mA 65 - - V 2.3 V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 40 mA 1.5 1.9 IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 1.4 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V - 7.3 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 140 nA gfs forward transconductance VDS = 10 V; ID = 2 A RDS(on) drain-source on-state resistance VDS = 10 V; ID = 1.4 A VGS = VGS(th) + 3.75 V - 3.0 - S - 500 - m Table 7. RF characteristics Test signal: 2-carrier W-CDMA; PAR 8.4 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1-64 DPCH; f1 = 952.5 MHz; f2 = 957.5 MHz; RF performance at VDS = 28 V; IDq = 224 mA; Tcase = 25 °C; per section in a class-AB production circuit unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Gp power gain PL = 2.5 W 20 20.8 - dB RLin input return loss PL = 2.5 W - 18 9 dB D drain efficiency PL = 2.5 W 18 19.8 - % ACPR adjacent channel power ratio PL = 2.5 W - 49 43 dBc 7. Test information 7.1 Ruggedness in class-AB operation The BLP8G10S-45P and BLP8G10S-45PG are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 224 mA; PL = 25 W; f = 728 MHz. BLP8G10S-45P_8G10S-45PG Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 29 October 2018 © Ampleon Netherlands B.V. 2018. All rights reserved. 3 of 16 BLP8G10S-45P; BLP8G10S-45PG Power LDMOS transistor 7.2 Impedance information Table 8. Typical impedance Measured load-pull data. Typical values per section unless otherwise specified. f ZS [1] ZL [1][2] (MHz) (Ω) (Ω) 720 11.6  j12.9 5.44 + j6.34 746 14.8  j9.2 4.51 + j6.03 757 15.3  j4.6 4.23 + j6.15 BLP8G10S-45P 791 13.3  j1.6 3.99 + j5.62 820 6.5  j1.1 3.87 + j5.37 869 5.2  j2.4 4.25 + j4.49 894 4.4  j3.0 3.69 + j4.89 925 3.8  j3.9 3.49 + j4.72 942 3.6  j4.2 3.06 + j4.46 960 3.6  j4.7 3.29 + j4.04 BLP8G10S-45PG 720 13.2  j7.7 4.34 + j5.10 746 11.8  j4.6 4.58 + j4.94 757 10.4  j3.7 4.50 + j5.34 791 9.8  j2.5 4.19 + j4.87 869 5.0  j4.0 4.27 + j3.42 881 4.6  j4.2 3.62 + j3.45 894 4.2  j4.7 3.77 + j3.29 925 3.8  j5.6 3.60 + j3.15 942 3.7  j5.8 3.29 + j2.89 961 3.6  j6.4 3.36 + j2.47 [1] ZS and ZL defined in Figure 1. [2] ZL is selected for maximum efficiency. drain ZL gate ZS 001aaf059 Fig 1. BLP8G10S-45P_8G10S-45PG Product data sheet Definition of transistor impedance All information provided in this document is subject to legal disclaimers. Rev. 4 — 29 October 2018 © Ampleon Netherlands B.V. 2018. All rights reserved. 4 of 16 BLP8G10S-45P; BLP8G10S-45PG Power LDMOS transistor 7.3 Test circuit 110 mm C31 C13 C11 C34 C33 C12 R11 C32 C36 C14 C35 76 mm C45 C24 C46 S1 R21 C21 C22 C43 C44 C42 C41 C23 amp00797 See Table 9 for a list of components. Fig 2. Component layout for class-AB production test circuit Table 9. List of components For test circuit see Figure 2. BLP8G10S-45P_8G10S-45PG Product data sheet Component Description Value C11, C21, C32, C42 multilayer ceramic chip capacitor 10 F, 50 V C12, C22, C33, C43 multilayer ceramic chip capacitor 1 F, 50 V C13, C23, C34, C44 multilayer ceramic chip capacitor 43 pF ATC100B C14, C24, C36, C46 multilayer ceramic chip capacitor 43 pF ATC100A C31, C41 electrolytic capacitor 220 F, 63 V C35, C45 multilayer ceramic chip capacitor 3.3 pF ATC100B R11, R21 chip resistor 10  Multi Comp SMD 1206 S1 socket - Johnstech All information provided in this document is subject to legal disclaimers. Rev. 4 — 29 October 2018 Remarks © Ampleon Netherlands B.V. 2018. All rights reserved. 5 of 16 BLP8G10S-45P; BLP8G10S-45PG Power LDMOS transistor 7.4 Graphical data 7.4.1 2-Carrier W-CDMA aaa-007627 23 aaa-007628 70 Gp (dB) ηD (%) 22 (2) (1) (3) 60 21 50 20 40 19 (2) (1) (3) 30 18 17 20 0 5 10 15 20 25 PL (W) 30 0 VDS = 28 V; IDq = 224 mA; carrier spacing = 5 MHz; fc = 960 MHz 5 10 20 25 PL (W) 30 VDS = 28 V; IDq = 224 mA; carrier spacing = 5 MHz; fc = 960 MHz (1) VDS = 24 V (1) VDS = 24 V (2) VDS = 28 V (2) VDS = 28 V (3) VDS = 32 V (3) VDS = 32 V Fig 3. 15 Power gain as a function of output power per section; typical values Fig 4. Drain efficiency as a function of output power per section; typical values aaa-007629 -10 ACPR5M (dBc) (2) (1) (3) -20 -30 -40 -50 0 5 10 15 20 25 PL (W) 30 VDS = 28 V; IDq = 224 mA; carrier spacing = 5 MHz; fc = 960 MHz (1) VDS = 24 V (2) VDS = 28 V (3) VDS = 32 V Fig 5. Adjacent channel power ratio (5 MHz) as a function of output power per section; typical values BLP8G10S-45P_8G10S-45PG Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 29 October 2018 © Ampleon Netherlands B.V. 2018. All rights reserved. 6 of 16 BLP8G10S-45P; BLP8G10S-45PG Power LDMOS transistor aaa-007630 23 aaa-007631 70 Gp (dB) ηD (%) 22 60 21 50 (1) (2) (3) (4) 20 40 19 (1) (2) 30 (3) 18 (4) 17 20 0 5 10 15 20 25 PL (W) 30 0 VDS = 28 V; IDq = 224 mA; carrier spacing = 5 MHz; fc = 960 MHz 5 10 20 25 PL (W) 30 VDS = 28 V; IDq = 224 mA; carrier spacing = 5 MHz; fc = 960 MHz (1) Tcase = 15 C (1) Tcase = 15 C (2) Tcase = 25 C (2) Tcase = 25 C (3) Tcase = 55 C (3) Tcase = 55 C (4) Tcase = 85 C (4) Tcase = 85 C Fig 6. 15 Power gain as a function of output power per section; typical values Fig 7. Drain efficiency as a function of output power per section; typical values aaa-007632 -10 ACPR5M (dBc) -20 (4) (3) (2) (1) -30 -40 -50 0 5 10 15 20 25 PL (W) 30 VDS = 28 V; IDq = 224 mA; carrier spacing = 5 MHz; fc = 960 MHz (1) Tcase = 15 C (2) Tcase = 25 C (3) Tcase = 55 C (4) Tcase = 85 C Fig 8. Adjacent channel power ratio (5 MHz) as a function of output power per section; typical values BLP8G10S-45P_8G10S-45PG Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 29 October 2018 © Ampleon Netherlands B.V. 2018. All rights reserved. 7 of 16 BLP8G10S-45P; BLP8G10S-45PG Power LDMOS transistor 8. Package outline SOT1223-4 (18.01) (15.44) (0.75) 3 A R1.38 L 0.05 A (7.04) (4.47) 9.96 (1) 16.00 P2.00 0.1Z R0.16 max. 2 1 9.78 4 15.96 B0.20 E 0.10 (4) (2.15) 8.85 0.10 metal protrusion 4x (ground) in corners (2) 1.57 (5) L 0.25 B 3.85 (3) 0.22 B0.05 20.57 (1) L 0.05 B 3.92 +0.08 - 0.03 R1.00 R0.32 B 20.39 Min. 5.5 Min. 7.8 (0.20) compound rim all around the perimeter of the heatsink pin 5 (6) R0.60(4x) Min. 15.5 Min. 18.5 Package outline drawing: units in mm. Tolerances unless otherwise stated: Revision: Angle: B 1° Revision date: Dimension: B 0.05 SOT1223-4 Fig 9. Third angle projection 1 7/26/2018 Sheet 1 of 2 Package outline SOT1223-4 (sheet 1 of 2) BLP8G10S-45P_8G10S-45PG Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 29 October 2018 © Ampleon Netherlands B.V. 2018. All rights reserved. 8 of 16 BLP8G10S-45P; BLP8G10S-45PG Power LDMOS transistor SOT1223-4 Drawing Notes Description Items Dimensions are excluding mold protrusion. All areas located adjacent to the leads have a maximum mold protrusion of 0.25 (1) mm (per side) and max. 0.62 mm in length. (2) The metal protrusion (tie bars) might protrude the molding compound, max. protrusion 0.3 mm. (detail A). (3) The lead dambar (metal) protrusions are not included. Add 0.14 mm max to the total lead dimension at the dambar location. (4) The lead coplanarity over all leads is 0.1 mm maximum. (5) Dimension is measured 0.5 mm from the edge of the top package body. (6) The hatched area indicates the exposed metal heatsink. (7) The leads and exposed heatsink are plated with matte Tin (Sn). At all other areas the mold protrusion is maximum 0.15 mm per side. See also detail B. location of metal protrusion (2) DETAIL A SCALE 25 : 1 B A lead dambar location 0.2 0.6 2m 5 0.1 ax . ma a 5m 1) x .( 1) x.( (1) DETAIL B SCALE 50: 1 Package outline drawing: units in mm. Tolerances unless otherwise stated: Revision: Angle: B 1° Revision date: Dimension: B 0.05 SOT1223-4 Third angle projection 1 7/26/2018 Sheet 2 of 2 Fig 10. Package outline SOT1223-4 (sheet 2 of 2) BLP8G10S-45P_8G10S-45PG Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 29 October 2018 © Ampleon Netherlands B.V. 2018. All rights reserved. 9 of 16 BLP8G10S-45P; BLP8G10S-45PG Power LDMOS transistor SOT1224-4 (18.01) 0.22±0.05 (15.44) (2.15) 8.85 (0.75) 4 R1.38 L 0.05 A P2.00 0.1Z 2 1 metal protrusion 4x (ground) in corners (2) C R0.16 max. L 0.25 B 3.85 (3) L 0.05 B 20.57 (1) R1.00 DETAIL C SCALE 25 : 1 +0.08 3.92 0.03 H R0.32 20.39 0.10 Min. 5.5 Min. 7.8 (0.20) compound rim all around the perimeter of the heatsink 0.95 B0.15 B 9.78 (4.47) 9.96 (1) 16.00 (7.04) 13.20 B0.30 A 3 +4° 3.0° - 3° +0.06 0.00 (6) 0.02 pin 5 (4) R0.60 (4x) Gage plane 0.35 (7) Min. 15.5 Seating plane Min. 18.5 Package outline drawing: units in mm. Tolerances unless otherwise stated: Revision: Angle: B 1° Revision date: Dimension: B 0.05 SOT1224-4 Third angle projection 1 7/26/2018 Sheet 1 of 2 Fig 11. Package outline SOT1224-4 (sheet 1 of 2) BLP8G10S-45P_8G10S-45PG Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 29 October 2018 © Ampleon Netherlands B.V. 2018. All rights reserved. 10 of 16 BLP8G10S-45P; BLP8G10S-45PG Power LDMOS transistor SOT1224-4 Drawing Notes Description Items Dimensions are excluding mold protrusion. All areas located adjacent to the leads have a maximum mold protrusion of 0.25 (1) mm (per side) and max. 0.62 mm in length. At all other areas the mold protrusion is maximum 0.15 mm per side. See also (2) The metal protrusion (tie bars) might protrude the molding compound, max. protrusion 0.3 mm. (detail A). detail B. (3) The lead dambar (metal) protrusions are not included. Add 0.14 mm max to the total lead dimension at the dambar location. (4) The hatched area indicated the exposed heatsink. (5) The leads and exposed heatsink are plated with matte Tin (Sn). Dimension is measured with respect to the bottom of the heatsink Datum H. Positive value means that the bottom of the (6) heatsink is higher than the bottom of the lead. (7) Gage plane (foot length) to be measured from the seating plan. location of metal protrusion (2) DETAIL A SCALE 25 : 1 B A lead dambar location 0.6 2m 5 0 .2 ax .(1 ma 1) x .( ) 5m 0.1 ax ) .(1 DETAIL B SCALE 50 : 1 Package outline drawing: units in mm. Tolerances unless otherwise stated: Revision: Angle: B 1° Revision date: Dimension: B 0.05 SOT1224-4 Third angle projection 1 7/26/2018 Sheet 2 of 2 Fig 12. Package outline SOT1224-4 (sheet 2 of 2) BLP8G10S-45P_8G10S-45PG Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 29 October 2018 © Ampleon Netherlands B.V. 2018. All rights reserved. 11 of 16 BLP8G10S-45P; BLP8G10S-45PG Power LDMOS transistor 9. Handling information CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. Table 10. ESD sensitivity ESD model Class Charged Device Model (CDM); According to ANSI/ESDA/JEDEC standard JS-002 C2A [1] Human Body Model (HBM); According to ANSI/ESDA/JEDEC standard JS-001 1C [2] [1] CDM classification C2A is granted to any part that passes after exposure to an ESD pulse of 500 V. [2] HBM classification 1C is granted to any part that passes after exposure to an ESD pulse of 1000 V. 10. Abbreviations Table 11. Acronym BLP8G10S-45P_8G10S-45PG Product data sheet Abbreviations Description 3GPP 3rd Generation Partnership Project CCDF Complementary Cumulative Distribution Function DPCH Dedicated Physical CHannel ESD ElectroStatic Discharge GSM Global System for Mobile Communications LDMOS Laterally Diffused Metal-Oxide Semiconductor LTE Long Term Evolution PAR Peak-to-Average Ratio RoHS Restriction of Hazardous Substances SMD Surface Mounted Device VSWR Voltage Standing-Wave Ratio W-CDMA Wideband Code Division Multiple Access All information provided in this document is subject to legal disclaimers. Rev. 4 — 29 October 2018 © Ampleon Netherlands B.V. 2018. All rights reserved. 12 of 16 BLP8G10S-45P; BLP8G10S-45PG Power LDMOS transistor 11. Revision history Table 12. Revision history Document ID Release date Data sheet status Change notice Supersedes BLP8G10S-45P_8G10S-45PG 20181029 v.4 Modifications: • • • • • Product data sheet - BLP8G10S-45P_8G10S-45PG v.3 Table 2 on page 2: package outline versions changed to SOT1223-4 and SOT1224-4 Table 3 on page 2: package outline versions changed to SOT1223-4 and SOT1224-4 Figure 2 on page 5: figure updated Table 10 on page 12: table added Section 8 on page 8: package outline versions changed from SOT1223-2 and SOT1224-2 to SOT1223-4 and SOT1224-4 BLP8G10S-45P_8G10S-45PG 20160108 v.3 Product data sheet - BLP8G10S-45P_8G10S-45PG v.2 BLP8G10S-45P_8G10S-45PG 20150901 v.2 Product data sheet - BLP8G10S-45P_8G10S-45PG v.1 BLP8G10S-45P_8G10S-45PG 20130725 v.1 Product data sheet - - BLP8G10S-45P_8G10S-45PG Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 29 October 2018 © Ampleon Netherlands B.V. 2018. All rights reserved. 13 of 16 BLP8G10S-45P; BLP8G10S-45PG Power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ampleon.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Ampleon does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Ampleon sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between Ampleon and its customer, unless Ampleon and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the Ampleon product is deemed to offer functions and qualities beyond those described in the Product data sheet. 12.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, Ampleon does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Ampleon takes no responsibility for the content in this document if provided by an information source outside of Ampleon. In no event shall Ampleon be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, Ampleon’s aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Ampleon. Right to make changes — Ampleon reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — Ampleon products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an BLP8G10S-45P_8G10S-45PG Product data sheet Ampleon product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Ampleon and its suppliers accept no liability for inclusion and/or use of Ampleon products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Ampleon makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Ampleon products, and Ampleon accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Ampleon product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Ampleon does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Ampleon products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Ampleon does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Ampleon products are sold subject to the general terms and conditions of commercial sale, as published at http://www.ampleon.com/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Ampleon hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Ampleon products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. All information provided in this document is subject to legal disclaimers. Rev. 4 — 29 October 2018 © Ampleon Netherlands B.V. 2018. All rights reserved. 14 of 16 BLP8G10S-45P; BLP8G10S-45PG Power LDMOS transistor Non-automotive qualified products — Unless this data sheet expressly states that this specific Ampleon product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Ampleon accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Ampleon’s warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Ampleon’s specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Ampleon for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Ampleon’s standard warranty and Ampleon’s product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Any reference or use of any ‘NXP’ trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the ‘NXP’ trademarks will be replaced by reference to or use of Ampleon’s own trademarks. 13. Contact information For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales BLP8G10S-45P_8G10S-45PG Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 29 October 2018 © Ampleon Netherlands B.V. 2018. All rights reserved. 15 of 16 BLP8G10S-45P; BLP8G10S-45PG Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 7.4.1 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 3 Impedance information . . . . . . . . . . . . . . . . . . . 4 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 6 2-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Handling information. . . . . . . . . . . . . . . . . . . . 12 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Contact information. . . . . . . . . . . . . . . . . . . . . 15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Ampleon Netherlands B.V. 2018. All rights reserved. For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales Date of release: 29 October 2018 Document identifier: BLP8G10S-45P_8G10S-45PG