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DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D109
PBSS5330X
30 V, 3 A
PNP low VCEsat (BISS) transistor
Product data sheet
Supersedes data of 2003 Nov 28
2004 Nov 03
NXP Semiconductors
Product data sheet
30 V, 3 A
PNP low VCEsat (BISS) transistor
PBSS5330X
FEATURES
QUICK REFERENCE DATA
• SOT89 (SC-62) package
SYMBOL
• Low collector-emitter saturation voltage VCEsat
VCEO
collector-emitter voltage
−30
V
IC
collector current (DC)
−3
A
• Higher efficiency leading to less heat generation
ICM
peak collector current
−5
A
• Reduced printed-circuit board requirements.
RCEsat
equivalent on-resistance
107
mΩ
• High collector current capability: IC and ICM
APPLICATIONS
PARAMETER
MAX.
UNIT
PINNING
• Power management
PIN
DESCRIPTION
– DC/DC converters
1
emitter
– Supply line switching
2
collector
– Battery charger
3
base
– LCD backlighting.
• Peripheral drivers
– Driver in low supply voltage applications
(e.g. lamps and LEDs)
2
– Inductive load driver (e.g. relays, buzzers
and motors).
3
DESCRIPTION
1
PNP low VCEsat transistor in a SOT89 plastic package.
3
2
1
sym079
MARKING
MARKING CODE(1)
TYPE NUMBER
PBSS5330X
Fig.1 Simplified outline (SOT89) and symbol.
*1S
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
PBSS5330X
2004 Nov 03
SC-62
DESCRIPTION
plastic surface mounted package; collector pad for good heat
transfer; 3 leads
2
VERSION
SOT89
NXP Semiconductors
Product data sheet
30 V, 3 A
PNP low VCEsat (BISS) transistor
PBSS5330X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−30
V
VCEO
collector-emitter voltage
open base
−
−30
V
VEBO
emitter-base voltage
open collector
−
−6
V
IC
collector current (DC)
note 4
−
−3
A
ICM
peak collector current
limited by Tj(max)
−
−5
A
IB
base current (DC)
−
−0.5
A
Ptot
total power dissipation
note 1
−
550
mW
note 2
−
1
W
note 3
−
1.4
W
note 4
−
1.6
W
Tamb ≤ 25 °C
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
ambient temperature
−65
+150
°C
Notes
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint.
2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 1 cm2.
3. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 6 cm2.
4. Device mounted on a ceramic printed-circuit board 7 cm2, single-sided copper, tin-plated.
2004 Nov 03
3
NXP Semiconductors
Product data sheet
30 V, 3 A
PNP low VCEsat (BISS) transistor
PBSS5330X
MLE372
2
handbook, halfpage
Ptot
(W)
(1)
1.6
(2)
1.2
(3)
0.8
(4)
0.4
0
0
(1)
(2)
(3)
(4)
40
80
120
160
Tamb (°C)
Ceramic PCB; 7 cm2 mounting pad for collector.
FR4 PCB; 6 cm2 copper mounting pad for collector.
FR4 PCB; 1 cm2 copper mounting pad for collector.
Standard footprint.
Fig.2 Power derating curves.
2004 Nov 03
4
NXP Semiconductors
Product data sheet
30 V, 3 A
PNP low VCEsat (BISS) transistor
PBSS5330X
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-a)
CONDITIONS
thermal resistance from junction to ambient
Rth(j-s)
VALUE
UNIT
note 1
225
K/W
note 2
125
K/W
note 3
90
K/W
note 4
80
K/W
16
K/W
in free air
thermal resistance from junction to soldering point
Notes
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint.
2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 1 cm2.
3. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 6 cm2.
4. Device mounted on a ceramic printed-circuit board 7 cm2, single-sided copper, tin-plated.
006aaa243
103
Zth(j-a)
(K/W)
102
10
duty cycle =
1.00
0.75
0.50
0.33
0.20
0.10
0.05
0.02
0.01
1
0
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
Mounted on FR4 printed-circuit board; standard footprint.
Fig.3 Transient thermal impedance as a function of pulse time; typical values.
2004 Nov 03
5
NXP Semiconductors
Product data sheet
30 V, 3 A
PNP low VCEsat (BISS) transistor
PBSS5330X
006aaa244
103
Zth(j-a)
(K/W)
102
10
duty cycle =
1.00
0.75
0.50
0.33
0.20
0.10
0.05
0.02
0.01
1
0
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2.
Fig.4 Transient thermal impedance as a function of pulse time; typical values.
006aaa245
103
Zth(j-a)
(K/W)
102
10
duty cycle =
1.00
0.75
0.50
0.33
0.20
0.10
0.05
0.02
1
0.01
0
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm2.
Fig.5 Transient thermal impedance as a function of pulse time; typical values.
2004 Nov 03
6
NXP Semiconductors
Product data sheet
30 V, 3 A
PNP low VCEsat (BISS) transistor
PBSS5330X
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector-base cut-off current
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCB = −30 V; IE = 0 A
−
−
−100
nA
VCB = −30 V; IE = 0 A; Tj = 150 °C
−
−
−50
μA
ICES
collector-emitter cut-off current
VCE = −30 V; VBE = 0 V
−
−
−100
nA
IEBO
emitter-base cut-off current
VEB = −5 V; IC = 0 A
−
−
−100
nA
hFE
DC current gain
VCE = −2 V
IC = −0.1 A
200
−
−
IC = −0.5 A
200
−
−
IC = −1 A; note 1
175
−
450
IC = −2 A; note 1
140
−
−
IC = −3 A; note 1
VCEsat
collector-emitter saturation
voltage
100
−
−
IC = −0.5 A; IB = −50 mA
−
−
−70
mV
IC = −1 A; IB = −50 mA
−
−
−130
mV
IC = −2 A; IB = −100 mA
−
−
−240
mV
IC = −3 A; IB = −300 mA; note 1
−
−
−320
mV
RCEsat
equivalent on-resistance
IC = −3 A; IB = −300 mA; note 1
−
80
107
mΩ
VBEsat
base-emitter saturation voltage
IC = −2 A; IB = −100 mA
−
−
−1.1
V
IC = −3 A; IB = −300 mA; note 1
−
−
−1.2
V
VBEon
base-emitter turn-on voltage
VCE = −2 V; IC = −1 A
−1.0
−
−
V
fT
transition frequency
IC = −100 mA; VCE = −5 V;
f = 100 MHz
100
−
−
MHz
Cc
collector capacitance
VCB = −10 V; IE = ie = 0 A; f = 1 MHz
−
−
45
pF
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2004 Nov 03
7
NXP Semiconductors
Product data sheet
30 V, 3 A
PNP low VCEsat (BISS) transistor
PBSS5330X
MDB910
800
MDB909
−1.2
handbook, halfpage
handbook, halfpage
hFE
VBE
(V)
600
(1)
(1)
−0.8
(2)
(2)
400
(3)
−0.4
(3)
200
0
−10−1
−1
−10
−102
0
−10−1
−103
−104
IC (mA)
−1
VCE = −2 V.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
VCE = −2 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig.6
Fig.7
DC current gain as a function of collector
current; typical values.
MDB908
−1
−10
−102
Base-emitter voltage as a function of
collector current; typical values.
MDB907
−1
handbook, halfpage
−103
−104
IC (mA)
handbook, halfpage
VCEsat
(V)
VCEsat
(V)
−10−1
−10
10−1
(1)
(2)
(1)
(2)
(3)
−10−2
−10−2
(3)
−10−3
−10−1
−1
−10
−102
−10−3
−10−1
−103
−104
IC (mA)
IC/IB = 20.
(1) Tamb = 100 °C.
Tamb = 25 °C.
(1) IC/IB = 100.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(2) IC/IB = 50.
(3) IC/IB = 10.
Fig.8
Fig.9
Collector-emitter saturation voltage as a
function of collector current; typical values.
2004 Nov 03
8
−1
−10
−102
−103
−104
IC (mA)
Collector-emitter saturation voltage as a
function of collector current; typical values.
NXP Semiconductors
Product data sheet
30 V, 3 A
PNP low VCEsat (BISS) transistor
PBSS5330X
MDB911
−1.4
MDB912
−5
handbook, halfpage
(1)
(2)
(3)
(4)
handbook, halfpage
IC
(A)
VBEsat
−4
(V)
(5)
(6)
−1.0
(7)
−3
(8)
(1)
(2)
−0.6
(9)
−2
(3)
(10)
−1
−0.2
−10−1
−1
−10
−102
0
−103
−104
IC (mA)
0
−0.4
Tamb = 25 °C.
(1) IB = 53.0 mA.
IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
−0.8
−1.2
−1.6
−2.0
VCE (V)
(4) IB = 37.1 mA.
(5) IB = 31.8 mA.
(6) IB = 26.5 mA.
(7) IB = 21.2 mA.
(8) IB = 15.9 mA.
(9) IB = 10.6 mA.
(10) IB = 5.3 mA.
(3) Tamb = 100 °C.
(2) IB = 47.7 mA.
(3) IB = 42.4 mA.
Fig.10 Base-emitter saturation voltage as a
function of collector current; typical values.
Fig.11 Collector current as a function of
collector-emitter voltage; typical values.
MDB913
102
handbook, halfpage
MDB914
103
handbook, halfpage
RCEsat
RCEsat
(Ω)
(Ω)
102
10
10
1
(1)
1
(1)
(2)
(2)
10−1
10−1
(3)
(3)
10−2
−10−1
−1
−10
−102
10−2
−10−1
−103
−104
IC (mA)
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(1) IC/IB = 10.
Fig.12 Equivalent on-resistance as a function of
collector current; typical values.
2004 Nov 03
−10
−102
−103
−104
IC (mA)
Tamb = 25 °C.
IC/IB = 20.
(1) Tamb = 100 °C.
−1
(2) IC/IB = 5.
(3) IC/IB = 1.
Fig.13 Equivalent on-resistance as a function of
collector current; typical values.
9
NXP Semiconductors
Product data sheet
30 V, 3 A
PNP low VCEsat (BISS) transistor
PBSS5330X
PACKAGE OUTLINE
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads
SOT89
B
D
A
bp3
E
HE
Lp
1
2
3
c
bp2
w M
bp1
e1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp1
bp2
bp3
c
D
E
e
e1
HE
Lp
w
mm
1.6
1.4
0.48
0.35
0.53
0.40
1.8
1.4
0.44
0.23
4.6
4.4
2.6
2.4
3.0
1.5
4.25
3.75
1.2
0.8
0.13
OUTLINE
VERSION
SOT89
2004 Nov 03
REFERENCES
IEC
JEDEC
JEITA
TO-243
SC-62
10
EUROPEAN
PROJECTION
ISSUE DATE
04-08-03
06-03-16
NXP Semiconductors
Product data sheet
30 V, 3 A
PNP low VCEsat (BISS) transistor
PBSS5330X
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
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Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 Nov 03
11
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R75/03/pp12
Date of release: 2004 Nov 03
Document order number: 9397 750 13888
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