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TWEAALSANF-19.200000

TWEAALSANF-19.200000

  • 厂商:

    TAITIEN(泰艺)

  • 封装:

    SMD-4

  • 描述:

    有源晶振 19.2MHz 2.8V~3.3V SMD-4

  • 详情介绍
  • 数据手册
  • 价格&库存
TWEAALSANF-19.200000 数据手册
TW Type High Precision 5.0 x 3.2 mm SMD Voltage Controlled Temperature Compensated Crystal Oscillator Actual Size FEATURE - Typical 5.0 x 3.2 x 1.85 mm ceramic SMD package. - ±0.28ppm, -40°C~+85°C ; ±0.05ppm, -10°C~+70°C - CMOS and Clipped Sine wave (without DC-cut capacitor) output optional. TYPICAL APPLICATION - Base Stations, Stratum 3 - Femtocell DIMENSION (mm) RoHS Compliant SOLDER PAD L AYOUT (mm) [ BOTTOM VIEW ] [ TOP VIEW ] 2.6 1.2 5.0± 0.2 #4 3.72 #3 2.3 #1 #2 #2 0.8 ±0.15 1.4 3.2± 0.2 #4 #1 Function Pin# 0.55 1 1.85 ±0.1 2 3 4 1.05 1.1 ±0.15 [ SIDE VIEW ] 0.25±0.04 #4 #3 #3 Vcon:VC-TCXO GND/NC:TCXO GND OUTPUT VDD #1 #2 1.33 To ensure optimal oscillator performance, place a by-pass capacitor of 0.1μF as close to the part as possible between Vdd and GND pads. ELECTRICAL SPECIFICATION 2.5V Parameter Supply Voltage Variation (VDD) Frequency Range Standard Frequency (for CMOS) Standard Frequency (for Clipped Sine Wave) Frequency Tolerance* Frequency Stability Vs Supply Voltage (±5%) change Vs Load (±10%) change Vs Aging (@1st year) Supply Current (CMOS output) 10 MHz Fo 40 MHz 40 MHz Min. VDD-5% 10 _ _ _ 8 90%VDD _ 6 5 _ Output Level (Clipped Sine Wave) 90%VDD _ _ mA 5 10%VDD 55 _ 0.5 ±5.0 100 _ _ -125 -145 -150 2.5 _ _ V % Vp-p Standard frequencies are frequencies which the crystal has been designed and does not imply a stock position. dBc/Hz 5 125 -55 * V ppm kΩ -125 -145 -150 _ 5 125 -55 ppm 15pF 10 KΩ // 10pF 2.5 0.5 ±5.0 100 ±0.2 ±0.2 ±1.0 6 45 0.8 _ ppm 8 15pF 10 KΩ // 10pF Load (CMOS) Load (Clipped Sine Wave) Control Voltage Range (VCTCXO) Pulling Range (VCTCXO) Vc Input Impedance (VCTCXO) 100 Hz Phase Noise @ 10 MHz 1 kHz 10 kHz Start time Storage Temp. Range V ±2.0 _ _ _ _ 10%VDD 55 45 0.8 Unit MHz _ _ _ ±0.2 ±0.2 ±1.0 _ _ _ Supply Current (Clipped Sine Wave) Max. VDD+5% 52 10, 12.8,13, 19.2, 20, 25, 26, 30.72 _ ±2.0 _ Fo 52 MHz Output Level (CMOS) Output High (Logic “1”) Output Low (Logic “0”) Duty 3.3V Max. Min. VDD+5% VDD-5% 52 10 10, 12.8,13, 19.2, 20, 25, 26, 30.72 mSec °C Frequency at 25°C, 1 hour after reflow. Frequency Stability vs. Temperature Range Temp. (°C) ppm ±0.05 ±0.1 ±0.2 ±0.28 ±0.5 -10 ~ +70 -20 ~ +70 -40 ~ +85 * ○: Available △:Conditional X: Not available Note: not all combination of options are available. Other specifications may be available upon request. www.taitien.com sales@taitien.com.tw Rev(17) 11/2022 97
TWEAALSANF-19.200000
物料型号:TW Type

器件简介:高精度5.0 x 3.2 mm SMD电压控制温度补偿晶体振荡器,适用于基站、3级飞蜂窝等。

引脚分配: - 1号引脚:Vcon:VC-TCXO - 2号引脚:GND/NC:TCXO 或 GND - 3号引脚:OUTPUT - 4号引脚:VDD

参数特性: - 工作温度范围:-40°C~+85°C(±0.28ppm); -10°C~+70°C(±0.05ppm) - 可选CMOS和削波正弦波(无直流切电容)输出 - 供电电压变化范围:2.5V和3.3V - 频率范围:10 MHz至52 MHz - 频率容差:+2.0 ppm - 电源电流:CMOS输出时10 MHz Fo≥40MHz为6 mA,40 MHz>Fo≥52MHz为8 mA(削波正弦波输出时相同) - 输出电平:CMOS输出高电平为90%VDD,低电平为10%VDD;削波正弦波输出为0.8 Vp-p - 控制电压范围:0.5 V至2.5 V

功能详解:为确保最佳振荡器性能,应在Vdd和GND焊盘之间尽可能靠近器件放置0.1μF的旁路电容。

应用信息:适用于基站、3级飞蜂窝等。

封装信息:5.0 x 3.2 x 1.85 mm的典型尺寸,符合RoHS标准。
TWEAALSANF-19.200000 价格&库存

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