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TSEATCJANF-20.000000

TSEATCJANF-20.000000

  • 厂商:

    TAITIEN(泰艺)

  • 封装:

    SMD-10

  • 描述:

    有源晶振 20MHz 2.8V~3.3V SMD-10

  • 详情介绍
  • 数据手册
  • 价格&库存
TSEATCJANF-20.000000 数据手册
TS Type < for Stratum 3 > 7.0 x 5.0 mm SMD Stratum 3 Voltage Controlled Temperature Compensated Crystal Oscillator Actual Size FEATURE - Typical 7.0 x 5.0 x 1.9 mm ceramic SMD package. - Stratum 3 (Overall ±4.6ppm including 20 years aging.) - CMOS and Clipped Sine wave (without DC-cut capacitor) output optional. TYPICAL APPLICATION - Base Stations - Stratum 3 RoHS Compliant TS #1 #2 #3 #3 [ SIDE VIEW ] #2 #1 0.90±0.15 0.60±0.15 1.90±0.20 0.7±0.12 #10 #4 10 Function NC NC NC GND Output NC NC Tri-State/NC VDD Vcon:VC-TCXO GND/NC:TCXO 6.00 4.30 1.40 0.06 #4 #9 0.80±0.15 #10 #5 1 2 3 4 5 6 7 8 9 0.80±0.15 #5 4.00±0.15 2.54±0.15 5.00±0.20 #9 Pin# 0.80±0.15 5.90±0.15 2.54±0.15 #6 #7 #8 1.00 0.1µF 2.54 [ BOTTOM VIEW ] 7.00±0.20 #8 #7 #6 0.80±0.15 [ TOP VIEW ] SOLDER PAD L AYOUT (mm) 1.20 DIMENSION (mm) 1.40 To ensure optimal oscillator performance, place a by-pass capacitor of 0.1μF as close to the part as possible between Vdd and GND pads. ELECTRICAL SPECIFICATION Parameter Supply Voltage Variation (VDD) Frequency Range Standard Frequency (for CMOS) Standard Frequency (for Clipped sine Wave) Operating Temp. Range Frequency Stability (Overall, 20 Years)* Frequency Stability Vs Temp. Range Holdover Stability + Supply Current (CMOS output) Supply Current (Clipped Sine Wave) Output Level (CMOS) Output High (Logic"1") Output Low (Logic"0") Duty Output Level (Clipped Sine Wave) Load (CMOS) Load (Clipped Sine Wave) Control Voltage Range (VCTCXO) Pulling Range (VCTCXO) Vc Input Impedance (VCTCXO) 100 Hz Phase Noise @ 10 MHz 1 kHz 10 kHz Start Time Tri-State Disable Enable Storage Temp. Range 2.5V Min. VDD-5% 5 _ _ _ _ _ 3.3V Max. Min. Max. VDD+5% VDD-5% VDD+5% 52 5 52 8.192, 10, 12.8, 20 8.192, 10, 12.8, 16.384, 19.2, 19.44, 20, 25, 26 -20 ~ 70 -40 ~ 85 ±4.6 ±0.28 ±0.37 6.0 3.5 _ 90%VDD _ 10%VDD 55 45 0.8 _ _ _ _ _ _ -120 -140 -148 3.5 -55 10%VDD 55 45 0.8 _ V MHz °C ppm ppm ppm mA V % Vp-p 15pF 10 KΩ // 10pF 2.5 _ _ 90%VDD 15pF 10 KΩ // 10pF 0.5 ±5.0 100 ±4.6 ±0.28 ±0.37 6.0 3.5 _ _ _ _ Unit 5 1.5 _ 125 0.5 ±5.0 100 _ _ 2.31 -55 2.5 _ _ -120 -140 -148 V ppm kΩ dBc / Hz 5 0.99 mSec _ V 125 °C Standard frequencies are frequencies which the crystal has been designed and does not imply a stock position. * Including calibration @ 25°C, supply voltage VDD±5% , load 15pF±5%, reflow soldering, 20 years aging and frequency stability over temperature. + Including 24hours aging , supply voltage VDD±5% and frequency stability over temperature. Note: not all combination of options are available. Other specifications may be available upon request. 120 Specifications subject to change without notice. www.taitien.com sales@taitien.com.tw Rev(21) 12/2021
TSEATCJANF-20.000000
PDF文档中包含的物料型号为TS型,适用于Stratum 3,尺寸为7.0 x 5.0 x 5.0 mm的SMD封装。

器件简介为电压控制的温度补偿晶体振荡器,符合RoHS标准,具有CMOS和削波正弦波输出选项。


引脚分配如下: - #10: GND/NC(接地或无连接) - #1: VDD(电源) - #2: Vcon:VC-TCXO(控制电压) - #3: GND(接地) - #4: 输出(三态) - #5: 不连接(NC) - #6: 不连接(NC) - #7: 不连接(NC) - #8: 不连接(NC) - #9: 不连接(NC)

参数特性包括: - 电源电压变化范围:2.5V至3.3V - 频率范围:5至52MHz - 工作温度范围:-20至70°C或-40至85°C - 频率稳定性(整体,20年):±4.6ppm - 供电电流(CMOS输出):6.0mA;供电电流(削波正弦波):3.5mA - 输出电平(CMOS):高电平90%VDD,低电平10%VDD - 输出电平(削波正弦波):0.8Vp-p - 控制电压范围(VCTCXO):0.5至2.5V

功能详解指出,为了确保振荡器的最佳性能,应在VDD和GND焊盘之间尽可能靠近器件放置一个0.1μF的旁路电容器。


应用信息包括基站等Stratum 3设备。


封装信息为7.0×5.0×1.9mm的典型尺寸,符合Stratum 3标准,包括20年老化在内的整体频率稳定性为±4.6ppm。


请注意,并非所有选项组合都可用,可根据要求提供其他规格,规格如有变更,恕不另行通知。
TSEATCJANF-20.000000 价格&库存

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