TPDMN26D0UFB4

TPDMN26D0UFB 4 N-Channel Enhancement Mode MOSFET WWW.SOT23.COM.TW Application Features y y y y y y y Surface Mount Package N-Channel Switch with Low RDS(on) Operated at Low Logic Level Gate Drive ESD Protected y Package and Pin Configuration Load/Power Switching Interfacing Switching Battery Management for Ultra Small Portable Electronics Logic Level Shift BL IC Circuit diag diagram CH PU DFN1006-3L Parameter Symbol Value Unit TE Absolute Maximum Ratings tings (TA=25°C =25° unless otherwise noted) VDS 20 V VGS ±10 V Continuous Drain Current ID 0.7 A Pulsed Drain Current (t=300µs) (1) IDM 1.8 A Power Dissipation PD 100 mW RθJA 833 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~ +150 ℃ Drain-Source Voltage Gate-Source Voltage (2) Thermal Resistance from Junction to Ambient 1 WWW.TECHPUBLIC.COM.TW TPDMN26D0UFB 4 N-Channel Enhancement Mode MOSFET WWW.SOT23.COM.TW Electrical Characteristics ( TA = 25°C unless otherwise noted ) Parameter Symbol Test Condition Min Type Max Unit Static Characteristics V(BR)DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =20V,VGS = 0V Gate-body leakage current IGSS VGS =±10V, VDS = 0V Gate threshold voltage VGS(th) VDS =VGS, ID =250µA Drain-source on-resistance(3) RDS(on) Drain-source breakdown voltage (3) Forward tranconductance gFS µA ±10 µA 0.75 1.1 V VGS =4.5V, ID =500mA 250 400 VGS =2 5V ID =500mA 300 500 Output Capacitance Coss VDS =10V, ID =500mA Crss Switching Characteristics (4) Turn-on delay time td(on) tr Turn-off delay time VDD=10V,ID=500mA, PU Turn-on rise time td(off) VGS=4.5V,RG=10Ω tf Turn-off fall time VDS IS=0.15A, VGS = 0V mΩ S 120 20 pF 15 6.7 4.8 ns 17.3 7.4 1.2 V TE Diode Forward voltage(3) CH Source-Drain Diode characteristics 1.2 VDS =16V,VGS =0V,f =1MHz BL Reverse Transfer Capacitance 0.5 IC Ciss V 1 Dynamic characteristics(4) Input Capacitance 20 2 WWW.TECHPUBLIC.COM.TW TPDMN26D0UFB 4 N-Channel Enhancement Mode MOSFET WWW.SOT23.COM.TW DFN1006-3L Package Outline Drawing L1 b1 e D b E E1 L1 L A C CH PU BL IC A1 NS DIMENSIONS SYM MILLIMETERS MIN A 0.45 A1 0.00 b 0.45 b1 0.10 C 0.12 D 0.95 e INCHES NOM MAX MIN NOM MAX 0.50 0.55 .55 0.018 0. 0.0 0.020 0.022 0.02 0.05 0.000 0.001 0.002 0.50 0.55 0.5 0.018 0.020 0.022 0.15 0.20 0 20 0. 0.004 0.006 0.008 0.15 5 0.18 .18 0.005 0.006 0.007 1.00 .0 1.05 1 0.037 0.039 0.041 0.65 BS BSC 0.55 0.60 0.6 TE E 0.026 BSC E1 L L1 0.65 0.022 0.024 0.026 0.15 0. 0.2 0.20 0 0.25 0.006 0.008 0.010 0.20 0.25 0.2 2 0.30 0.008 0.010 0.012 0. 0.05 REF 0.0002 REF Suggested Land Pattern Y1 Y2 SYM Z Y3 X C 3 DIMENSIONS MILLIMETERS INCHES C 0.25 0.010 X 0.65 0.024 Y1 0.50 0.020 Y2 0.50 0.020 Y3 0.25 0.010 Z 0.20 0.008 WWW.TECHPUBLIC.COM.TW