SFH7225-Z

2012-08-17 Multi TOPLED with LED and Phototransistor-Detector Multi TOPLED mit LED und Fototransistor-Detektor Version 1.0 SFH 7225 Features: Besondere Merkmale: • Display function can be controlled by built-in phototransistor • Yellow LED • Dominant wavelength: 589 nm • Silicon phototransistor • Low saturation voltage • Emitter and detector electrically isolated • Anzeigefunktion kann durch eingebauten Fototransistor überwacht werden • Gelbe LED • Dominantwellenlänge: 589 nm • Silizium-Fototransistor • Geringe Sättigungsspannung • Emitter und Diode galvanisch getrennt Applications Anwendungen • Display with controlling function • Anzeige mit Funktionskontrolle Ordering Information Bestellinformation Type: Luminous Intensity Package: Ordering Code Typ: Lichtstärke Gehäuse: Bestellnummer SMT Multi TOPLED Q65110A2743 IF = 20 mA, tp = 20 ms Iv [mcd] SFH 7225 2012-08-17 63 ... 200 1 Version 1.0 SFH 7225 Maximum Ratings Grenzwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Operating and storage temperature range Betriebs- und Lagertemperatur Top; Tstg -40 ... 100 °C Forward current Durchlassstrom IF (DC) 30 mA Reverse voltage Sperrspannung VR 5 Total power dissipation Verlustleistung Ptot 80 mW 800 K/W Emitter Sender Thermal resistance junction - ambient, mounted on RthJA PC-board (FR4) Wärmewiderstand Sperrschicht - Umgebung, bei Montage auf FR4 Platine Thermal resistance junction - solder point, mounted on PC-board (FR4) Wärmewiderstand Sperrschicht - Lötpad, bei Montage auf FR4 Platine RthJS V 6001) 500 K/W 3401) Detector (Silicon phototransistor) Empfänger (Si-Fototransistor) Collector current Kollektorstrom IC 15 mA Collector-emitter voltage Kollektor-Emitter-Spannung VCE 35 V Collector surge current Kollektorspitzenstrom (τ < 10 µs) ICS 75 mA Total power dissipation Verlustleistung Ptot 90 mW 1) This value is valid only when the power dissipation of the photo transistor is limited to max. 2.5 mW. 1) Dieser Wert gilt nur, wenn die Verlustleistung des Fototransistors auf max. 2,5 mW begrenzt ist. : : 2012-08-17 2 Version 1.0 SFH 7225 Characteristics (TA = 25 °C) Kennwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Emitter Sender Emission wavelength Zentrale Emissionswellenlänge (IF = 20 mA, tP = 20 ms) λpeak 591 nm Dominant wavelength Dominantwellenlänge (IF = 20 mA, tP = 20 ms) λdom 589 nm Spectral bandwidth at 50% of Imax Spektrale Bandbreite bei 50% von Imax (IF = 20 mA, tp = 20 ms) Δλ 15 nm Half angle Halbwinkel ϕ ± 60 ° Forward voltage Durchlassspannung (IF = 20 mA, tp = 20 ms) VF 2 (≤ 2.6) V Reverse current Sperrstrom (VR = 3 V) IR 0.01 (≤ 10) µA Temperature coefficient of VF Temperaturkoeffizient von VF (IF = 20 mA, tp = 20 ms) TCV -2.5 mV / K Temperature coefficient of λpeak Temperaturkoeffizient von λpeak (IF = 20 mA, tp = 20 ms) TCλ peak 0.13 nm / K Temperature coefficient of λdom Temperaturkoeffizient von λdom (IF = 20 mA, tp = 20 ms) TCλ dom 0.096 nm / K Detector (Silicon phototransistor) Empfänger (Si-Fototransistor) Wavelength of max. sensitivity Wellenlänge der max. Fotoempfindlichkeit 2012-08-17 λS max 3 990 nm Version 1.0 SFH 7225 Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Spectral range of sensitivity Spektraler Bereich der Fotoempfindlichkeit (S = 10% of Smax) λ Capacitance Kapazität (VCE = 0 V, f = 1 MHz, E = 0) 440 ... 1150 nm CCE 5 pF Dark current Dunkelstrom (VCE = 25 V) ICE0 1 (< 200) nA Sensitivity to ambient light Fremdlichtempfindlichkeit (EV = 1000 lx, Normlicht A / standard light A, VCE= 5 V) ICE typ 650 μA Crosstalk: collector-emitter current Übersprechen: Kollektor-Emitterstrom (IF = 20 mA, VCE = 5 V) ICE min 0.5 ... 5.0 mA Collector-emitter saturation voltage Collector-emitter saturation voltage (IF = 20 mA, IC = 0.3 x ICE min) VCEsat < 0.4 MULTILED MULTILED 2012-08-17 4 V Version 1.0 SFH 7225 Diagrams LED Diagramme LED Relative Spectral Emission Relative spektrale Emission Irel = f(λ), TA = 25 °C, IF = 20 mA, V(λ) = Standard Eye Response Curve OHL01061 100 Irel % 80 Vλ 60 40 yellow super-red 20 0 400 450 500 550 600 650 nm λ 2012-08-17 5 700 Version 1.0 SFH 7225 Forward Current Durchlassstrom Relative Luminous Intensity Relative Lichtstärke IF = f(VF), TA = 25 °C Iv / Iv(10 mA)= f(IF), T A = 25 °C OHL00232 2 10 mA 5 OHL01062 10 1 IV I V (20 mA) IF 10 0 10 1 5 10 -1 10 0 5 10 -1 super-red yellow 1 1.4 1.8 2.2 2.6 10 -2 10 0 3 V 3.4 10 1 mA 10 2 IF VF Relative Luminous Intensity Relative Lichtstärke Permissible Pulse Handling Capability Zulässige Pulsbelastbarkeit Iv / Iv(25 °C) = f(TA ), IF = 10 mA IF = f(tp), TA = 25 °C, duty cycle D = parameter OHL01068 2.0 IV IF IV (25 ˚C) OHL00318 100 A 5 1.6 D= 0.005 0.01 0.02 0.05 0.1 0.2 0.5 yellow super-red 1.2 10-1 0.8 5 yellow super-red 0.4 t D = TP 0 -20 0 20 40 60 IF T 10-2 -5 10 10-4 10-3 10-2 10-1 10 0 101 s 10 2 ˚C 100 tp Tj 2012-08-17 tP 6 Version 1.0 SFH 7225 Permissible Pulse Handling Capability Zulässige Pulsbelastbarkeit Max. Permissible Forward Current Max. zulässiger Durchlassstrom IF = f(tp), TA = 85 °C, duty cycle D = parameter IF IF, max = f(T A) t tP 5 IF IF D = TP OHF00011 35 OHL00316 100 A 30 T 25 D= 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10-1 20 Ptot, max. (Detector) = 2.5 mW Ptot, max. (Detector) = 90 mW 15 5 10 5 TA temp. ambient 10-2 -5 10 10-4 10-3 10-2 10-1 10 0 101 s 10 2 0 tp IF, max = f(TS) OHF00008 IF 30 Ptot, max. (Detector) = 2.5 mW Ptot, max. (Detector) = 90 mW 25 20 15 10 5 TS temp. solder point 0 0 20 40 60 80 ˚C 100 T 2012-08-17 20 40 60 80 ˚C 100 T Max. Permissible Forward Current Max. zulässiger Durchlassstrom 35 0 7 Version 1.0 SFH 7225 Diagrams Phototransistor Diagramme Fototransistor Relative Spectral Sensitivity Relative spektrale Empfindlichkeit Srel = f(λ), TA = 25°C Photocurrent Fotostrom IPCE = f(VCE), Ee = Parameter, TA = 25°C Srel 100 % OHF01529 10 0 mA OHF00207 Ι PCE 80 1 mW cm 2 0.5 mW cm 2 0.25 mW cm 2 0.1 mW cm 2 70 60 10 -1 50 40 30 20 10 0 400 500 600 700 800 900 10 -2 nm 1100 λ 2012-08-17 8 0 5 10 15 20 25 30 V 35 V CE Version 1.0 SFH 7225 Dark Current Dunkelstrom ICEO = f(VCE), E = 0,TA = 25°C Photocurrent Fotostrom IPCE / IPCE(25°C)= f(TA), VCE = 5 V Ι PCE OHF01527 10 1 nA OHF01524 1.6 Ι CEO Ι PCE 25 1.4 10 0 1.2 1.0 10 -1 0.8 0.6 10 -2 0.4 0.2 0 -25 0 25 50 10 -3 75 C 100 TA 0 5 10 15 20 25 30 V 35 V CE Collector-Emitter Capacitance Kollektor-Emitter Kapazität CCE = f(VCE), f = 1 MHz, E = 0, TA = 25°C Dark Current Dunkelstrom ICEO = f(TA), VCE = 5 V, E = 0 OHF01530 10 3 nA OHF01528 5.0 Ι CEO C CE pF 4.0 10 2 3.5 3.0 10 1 2.5 2.0 1.5 10 0 1.0 0.5 10 2012-08-17 0 10 -2 -1 -25 0 25 50 75 ˚C 100 TA 9 10 -1 10 0 10 1 V 10 2 V CE Version 1.0 SFH 7225 IRED Radiation Characteristics / Phototransistor Directional Characteristics IRED Abstrahlcharakteristik / Phototransistor Winkeldiagramm Irel = f(ϕ) / Srel = f(ϕ) 40˚ 30˚ 20˚ 10˚ 0˚ ϕ 50˚ OHL01660 1.0 0.8 0.6 60˚ 0.4 70˚ 0.2 80˚ 0 90˚ 100˚ 1.0 0.8 0.6 0˚ 0.4 20˚ 40˚ 60˚ 80˚ Package Outline Maßzeichnung 3.0 (0.118) 2.6 (0.102) 2.3 (0.091) 2.1 (0.083) C E 3.7 (0.146) 3.3 (0.130) C 0.1 (0.004) typ 4 Package marking Emission color : super-red (SFH 331) 0.5 (0.020) A 1 0.9 (0.035) 0.7 (0.028) 3 1.1 (0.043) 2 (2.4 (0.094)) 3.4 (0.134) 3.0 (0.118) 0.8 (0.031) 0.6 (0.024) 2.1 (0.083) 1.7 (0.067) 0.6 (0.024) 0.4 (0.016) 0.18 (0.007) 0.12 (0.005) GPLY6924 Dimensions in mm (inch). / Maße in mm (inch). 2012-08-17 10 100˚ 120˚ Version 1.0 SFH 7225 Package SMT Multi TOPLED Gehäuse SMT Multi TOPLED Recommended Solder Pad Empfohlenes Lötpaddesign 3.3 (0.130) 3.3 (0.130) 0.4 (0.016) 2.6 (0.102) 0.5 (0.020) Padgeometrie für verbesserte Wärmeableitung Paddesign for improved heat dissipation Kathoden Markierung / Cathode marking 7.5 (0.295) 1.5 (0.059) 4.5 (0.177) 1.1 (0.043) Cu Fläche /