PJM2309PSC

PJM2309PSC P-Channel Power MOSFET SOT-23-3 Features   VDS= -60V ID= -4A RDS(ON)= 180mΩ(max) @-10V  Halogen and Antimony Free 2 3 1 Applications  Load Switch and in PWM Applications  Power Management 1. Gate 2.Source 3.Drain Marking: Q9 Schematic Diagram Drain 3 1 Gate 2 Source Absolute Maximum Ratings Ratings at TA =25℃ unless otherwise specified. Parameter Value 60 Units Drain-Source Voltage Symbol -VDS Gate-Source Voltage VGS ±20 V -ID 4 A -IDM 20 A PD 1.4 W TJ, TSTG 150, -55 to 150 °C Parameter Symbol Typ. Units Maximum Junction-to-Ambient Note2 RθJA 89 °C/W Continuous Drain Current Pulsed Drain Current Note1 Power Dissipation Junction and Storage Temperature Range V Thermal Characteristics www.pingjingsemi.com Revision：1.0 Jun-2019 1/7 PJM2309PSC P-Channel Power MOSFET Electrical Characteristics (TC=25℃ unless otherwise specified) Symbol Test Condition Min. Typ. Max. Units Drain-source breakdown voltage -V(BR)DSS VGS = 0V, ID=-250µA 60 -- -- V Drain to Source Leakage Current -IDSS VDS =-60V,VGS = 0V -- -- 1 µA Gate-body leakage current IGSS VGS =±20V, VDS = 0V -- -- ±100 nA Gate threshold voltage Note3 -VGS(th) 1.5 -- 3 V Drain-source on-resistance Note3 RDS(on) VGS =-10V, ID =-2A -- -- 180 mΩ VGS =-4.5V, ID =-1A -- -- 280 mΩ Forward transconductance Note3 gFS VDS =-5V, ID =-2A -- 6 -- S -- 850 -- -- 65 -- Parameter Static Characteristics VDS =VGS, ID =-250µA Dynamic characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss -- 28 -- td(on) -- 7 -- -- 3 -- -- 28 -- VDS = -30V,VGS = 0V,f=1MHz pF Switching Characteristics Turn-on delay time Turn-on rise time Turn-off delay time tr td(off) ID=-1A， VDD=-30V, VGS=-10V，RGEN =3Ω, RL =7.5Ω, Turn-off fall time tf -- 5.5 -- Total gate charge Qg -- 22 -- Gate-source charge Qgs -- 2.5 -- Gate-drain charge Qgd -- 6 -- -- -- 1.2 VDD =-30V,VGS =-10V,ID =-2A ns nC Source-Drain Diode characteristics Diode Forward voltage -VDS VGS =0V, IS=-4A V Notes: 1. 2. 3. Repetitive Rating: Pulse width limited by maximum junction temperature. Surface mounted on FR4 board，t ≤ 10 sec. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. www.pingjingsemi.com Revision：1.0 Jun-2019 2/7 PJM2309PSC P-Channel Power MOSFET Typical Characteristic Curves 2.0 8 1.5 6 I D - Drain Current (A) I D - Drain Current (A) VGS = 10 thru 5 V VGS = 4 V 4 1.0 TC = 25 °C 0.5 2 VGS = 3 V TC = 125 °C TC = - 55 °C 0.0 0 0 1 2 3 4 0 5 1 2 3 4 5 100 1000 VGS - Gate-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Transfer Characteristics Output Characteristics 0.8 8 0.6 6 Power (W) R DS(on) - On-Resistance (Ω) TA = 25 °C VGS = 4.5 V 0.4 VGS = 10 V 0.2 4 2 0.0 0 2 4 6 0 0.01 8 0.1 1 Time (s) ID - Drain Current (A) Single Pulse Power, Junction-to-Ambient On-Resistance vs. Drain Current and Gate Voltage 10 2.0 ID = 1.25 A ID = 1.25 A VDS = 30 V 1.7 VDS = 15 V 6 4 VDS = 45 V 2 VGS = 10 V (Normalized) 8 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 10 1.4 VGS = 4.5 V 1.1 0.8 0 0 5 10 15 Qg - Total Gate Charge (nC) Gate Charge www.pingjingsemi.com Revision：1.0 Jun-2019 20 25 0.5 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 3/7 PJM2309PSC P-Channel Power MOSFET 100 2.0 ID = 1.25 A R DS(on) - On-Resistance (Ω) I S - Source Current (A) 10 TJ = 150 °C TJ = 25 °C 1 0.1 TJ = - 50 °C 1.6 1.2 0.8 TJ = 125 °C 0.01 0.4 0.001 0.0 0.0 0.3 0.6 0.9 1.2 1.5 TJ = 25 °C 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 10 0.6 10 µs Limited by RDS(on)* ID = 250 µA I D - Drain Current (A) VGS(th) Variance (V) 0.4 ID = 1 mA 0.2 0.0 1 100 µs 1 ms 10 ms 0.1 - 0.2 100 ms TA = 25 °C Single Pulse - 0.4 - 50 - 25 0 25 50 75 100 125 150 0.01 0.1 1 s, 10 s 100 s, DC 1 100 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified TJ - Temperature (°C) Threshold Voltage Safe Operating Area, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 166 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 4. Surface Mounted 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient www.pingjingsemi.com Revision：1.0 Jun-2019 4/7 PJM2309PSC P-Channel Power MOSFET Package Outline SOT-23-3 Dimensions in mm 2.8 1.6 10 12 0.95 0.35 0.127± 0.03 ± 0.01 A ±0.1 ±0.05 2.92 ± 0.05 R0.15MAX `4X R0.15MAX `4X 1.26MAX 0.06 12 ± 0.05 ± 0.03 0.65 1.1 ± 0.05 10 Ordering Information Device Package Shipping PJM2309PSC SOT-23-3 3000PCS/Reel&Tape www.pingjingsemi.com Revision：1.0 Jun-2019 5/7 PJM2309PSC P-Channel Power MOSFET Conditions of Soldering And Storage Recommended condition of reflow soldering  Recommended peak temperature is over 245 ℃. If peak temperature is below 245 ℃, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 ℃  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 ℃  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revision：1.0 Jun-2019 6/7 PJM2309PSC P-Channel Power MOSFET Package Specifications Cover Tape 3,000 pcs per reel SOT-23-3 Carrier Tape 30,000 pcs per box 10 reels per box 240 217 0 21 43 5 120,000 pcs per carton 4 boxes per carton 455 220 2. Tape and reel data(7inch Units:mm) D A 3000 T2 T1 2900 2000 1900 1000 600 B C E PS F 1.10±0.10 Pin1 Revision：1.0 Jun-2019 N 3.2±0.10（Bo） 8 MAX 0.75 1.40±0.10（Ko） B-B Tape (8mm) www.pingjingsemi.com 0.46 0.2 8 MAX B 4.00±0.10 0.25±0.02（T） 2.45 1.55±0.05 3.50±0.05 2.00±0.05 8 ± 0 .1 0 4.00±0.10 B 1.75±0.10 Reel (7'') Symbol A B C E F D T1 T2 N G Value (unit: mm) Ø 177.8±1 2.7±0.2 Ø 13.5±0.2 Ø 54.5±0.2 12.3±0.3 9.6+2/-0.3 1.0±0.2 1.2±0.2 3.15±0.1 1.22±0.1 7/7