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PJM3401PSC

PJM3401PSC

  • 厂商:

    PJ(平晶)

  • 封装:

    SOT-23

  • 描述:

    P-channel Power MOSFET

  • 数据手册
  • 价格&库存
PJM3401PSC 数据手册
PJM3401PSC P-Channel Power MOSFET SOT-23-3 Features   VDS= -30V ID= -4.5A RDS(ON)= 60mΩ(max) @-10V  Halogen and Antimony Free 1 Applications  2 3 1. Gate Load Switch and in PWM Applications 2.Source 3.Drain Marking: P1 Schematic Diagram Drain 3 1 Gate 2 Source Absolute Maximum Ratings Ratings at TA =25℃ unless otherwise specified. Parameter Symbol Value Units Drain-Source Voltage -VDS 30 V Gate-Source Voltage VGS ±12 V Continuous Drain Current -ID 4.5 A Power Dissipation PD 1.4 W TJ, TSTG 150, -55 to 150 °C Parameter Symbol Typ. Units Maximum Junction-to-Ambient Note1 RθJA 89 °C/W Junction and Storage Temperature Range Thermal Characteristics www.pingjingsemi.com Revision:1.0 Jun-2019 1/7 PJM3401PSC P-Channel Power MOSFET Electrical Characteristics (TC=25℃ unless otherwise specified) Symbol Test Condition Min. Typ. Max. Units Drain-source breakdown voltage -V(BR)DSS VGS = 0V, ID=-250µA 30 -- -- V Drain to Source Leakage Current -IDSS VDS =-30V,VGS = 0V -- -- 1 µA Gate-body leakage current IGSS VGS =±12V, VDS = 0V -- -- ±100 nA Gate threshold voltage Note2 -VGS(th) VDS =VGS, ID =-250µA 0.7 1 1.3 V VGS =-10V, ID =-4.1A -- -- 60 mΩ VGS =-4.5V, ID =-4A -- -- 70 mΩ VGS =-2.5V, ID =-1A -- -- 90 mΩ VDS =-5V, ID =-5A 7 -- -- S -- 880 -- -- 105 -- Parameter Static Characteristics Drain-source on-resistance Note2 Forward transconductance Note2 RDS(on) gFS Dynamic characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss -- 65 -- td(on) -- 7 -- -- 3 -- -- 30 -- VDS = -15V,VGS = 0V,f=1MHz pF Switching Characteristics Turn-on delay time Turn-on rise time Turn-off delay time tr td(off) VDS=-15V, VGS=-10V,RGEN =6Ω, ID=-4.2A Turn-off fall time tf -- 12 -- Total gate charge Qg -- 8.5 -- Gate-source charge Qgs -- 1.8 -- Gate-drain charge Qgd -- 2.7 -- -- -- 1.2 VDD =-15V,VGS =-4.5V,ID =-4.2A ns nC Source-Drain Diode characteristics Diode Forward voltage -VDS VGS =0V, IS=-4.2A V Notes: 1. 2. Surface mounted on FR4 board,t ≤ 10 sec. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. www.pingjingsemi.com Revision:1.0 Jun-2019 2/7 PJM3401PSC P-Channel Power MOSFET ID- Drain Current (A) ID- Drain Current (A) Typical Characteristic Curves VDS Drain-Source Voltage (V) TJ-Junction Temperature(℃) Figure 2 Output Characteristics ID- Drain Current (A) RDS(on) On-Resistance(mΩ) Figure 1 Drain Current ID- Drain Current (A) VGS Gate-Source Voltage (V) Figure 3 Drain-Source On-Resistance Normalized On-Resistance RDS(on) On-Resistance(mΩ) Figure 4 Transfer Characteristics TJ-Junction Temperature(℃) Figure 5 Drain-Source On-Resistance www.pingjingsemi.com Revision:1.0 Jun-2019 VGS Gate-Source Voltage (V) Figure 6 RDS(on) vs VGS 3/7 PJM3401PSC C Capacitance (pF) VGS Gate-Source Voltage (V) P-Channel Power MOSFET VDS Drain-Source Voltage (V) Qg Gate Charge (nC) Figure 8 Gate Charge ID- Drain Current (A) Is- Reverse Drain Current (A) Figure 7 Capacitance vs VDS VSD Source-Drain Voltage (V) VDS Drain-Source Voltage (V) Figure 9 Source- Drain Diode Forward Figure 10 Safe Operation Area www.pingjingsemi.com Revision:1.0 Jun-2019 4/7 PJM3401PSC P-Channel Power MOSFET Package Outline SOT-23-3 Dimensions in mm 2.8 1.6 10 12 0.95 0.35 0.127± 0.03 ± 0.01 A ±0.1 ±0.05 2.92 ± 0.05 R0.15MAX `4X R0.15MAX `4X 1.26MAX 0.06 12 ± 0.05 ± 0.03 0.65 1.1 ± 0.05 10 Ordering Information Device Package Shipping PJM3401PSC SOT-23-3 3000PCS/Reel&Tape www.pingjingsemi.com Revision:1.0 Jun-2019 5/7 PJM3401PSC P-Channel Power MOSFET Conditions of Soldering And Storage Recommended condition of reflow soldering  Recommended peak temperature is over 245 ℃. If peak temperature is below 245 ℃, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 ℃  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 ℃  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revision:1.0 Jun-2019 6/7 PJM3401PSC P-Channel Power MOSFET Package Specifications Cover Tape 3,000 pcs per reel SOT-23-3 Carrier Tape 30,000 pcs per box 10 reels per box 240 217 0 21 43 5 120,000 pcs per carton 4 boxes per carton 455 220 2. Tape and reel data(7inch Units:mm) D A 3000 T2 T1 2900 2000 1900 1000 600 B C E PS F 1.10±0.10 Pin1 Revision:1.0 Jun-2019 N 3.2±0.10(Bo) 8 MAX 0.75 1.40±0.10(Ko) B-B Tape (8mm) www.pingjingsemi.com 0.46 0.2 8 MAX B 4.00±0.10 0.25±0.02(T) 2.45 1.55±0.05 3.50±0.05 2.00±0.05 8 ± 0 .1 0 4.00±0.10 B 1.75±0.10 Reel (7'') Symbol A B C E F D T1 T2 N G Value (unit: mm) Ø 177.8±1 2.7±0.2 Ø 13.5±0.2 Ø 54.5±0.2 12.3±0.3 9.6+2/-0.3 1.0±0.2 1.2±0.2 3.15±0.1 1.22±0.1 7/7
PJM3401PSC 价格&库存

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