WPM3407-3/TR

WPM3407 WPM3407 Single P-Channel, -30 V, -4.4A,Power MOSFET Http://www.sh-willsemi.com Description The WPM3407 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion applications. Standard Product WPM3407 is Pb-free. 3 Features 1 2 V(BR)DSS −30 V RDS(on) Typ SOT 23-3 36 mΩ @ −10 V 53 mΩ @ −4.5 V pin connections : Application z z z z z PïChannel Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch G 1 3 S D 2 Top View ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C)a TA=25°C TA=70°C Pulsed Drain Current Maximum Power Dissipation a TA=25°C TA=70°C Operating Junction and Storage Temperature Range ID 10 S -30 PD TJ, Tstg Drain 3 V ±20 WP7Z - 3.7 - 4.4 - 3.5 IDM Marking: Steady State Unit - 2.9 A 2 1 -20 Gate 1.4 1.0 0.9 0.6 -55 to 150 W Source W P7= Specific Device Code Z = Date Code °C Order information Part Number Package Shipping WPM3407-3/TR SOT23-3 3000Tape&Reel Will Semiconductor Ltd. 1 2015/08/25 – Rev. 1.3 WPM3407 THERMAL RESISTANCE RATINGS Parameter Symbol Junction-to-Ambient Thermal Resistance a Junction-to-Case Thermal Resistance t ≤ 10 s Steady State Steady State Typical Maximum 70 90 90 125 50 80 RθJA RθJC Unit °C/W a. Surface Mounted on FR4 Board using 1 in sq pad size, 1oz Cu. Electrical Characteristics (T = 25°C unless otherwise noted) J Parameter Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = -250 µA -30 Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V Gate Threshold Voltage VGS(th) VGS = VDS, ID = -250 µA Drain-source On-Resistance RDS(on) Typ Max Unit Static Parameters VDS= 2 4 V , VGS = 0 V V TJ = 25°C -1 TJ = 85°C -10 -1.0 VGS = -10V, ID =-4.4A VGS = -4.5, ID =-3.0A -2.0 ±100 nA -3.0 V 36 46 53 66 -1.5 Forward Recovery Voltage VSD VGS = 0 V, IS =-1.0A -0.5 -0.79 Forward Transconductance gFS VDS = -5.0 V, ID = -5 A 5 8 µA mΩ V S Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance 700 950 1200 90 120 150 Crss 75 100 125 Total Gate Charge Qg(tot) 13 18 23 Threshold Gate Charge Qg(th) 1.5 2 2.5 2 2.5 3 3 3.8 4.5 5 8 8 11 15 4 6 9 30 40 50 5 7.5 10 Gate- Source Charge Qgs Gate- Drain Charge Qgd Gate Resistance Rg VGS = 0 V, f = 1.0 MHz, VDS = -15 V VGS = -10 V, VDS = -15 V, ID =-5 A VGS = 0 V, VDS = 0 V, f = 1.0 MHz pF nC Ω Switching Parameters Turn-On Delay Time Rise Time Turn-Off Delay Time td(on) tr td(off) VGS = -10 V, VDS = -15 V, ID=-4.3A, RG=6 Ω ns Fall Time tf Body Diode Reverse Recovery Time trr IF=-5A, dI/dt=100A/µs 25 ns Body Diode Reverse Recovery Charge Qrr IF=-5A, dI/dt=100A/µs 14 nC Will Semiconductor Ltd. 2 2015/08/25 – Rev. 1.3 WPM3407 Typical Performance Characteristis 24 RDS(ON)ON Resistance(mOhm) VGS=10V 150 ID,Drain Current(A) 20 VGS=6V 16 VGS=4V 12 8 VGS=3V 4 0 0 1 2 3 4 120 V GS=10V 30 0 Drain Current VS Drain-Source voltage 5 10 15 20 ID, Drain Current(A) Drain Current vs ON Resistance 0.20 25 VDS=-2V 0.16 20 ID=-3A ID,Drain Current(A) RDS(ON) ON Resistance(Ohm) VGS=6V 60 5 VDS,Drain-Source voltage(V) VGS=4.5V 90 0.12 0.08 15 10 5 0.04 0 0 2 4 6 8 10 VGS,Gate-Source Voltage(V) 0 1 2 3 4 5 VGS,Gate-Source Voltage(V) 6 Drain Current VS Gate-Source Voltage Gate-Source Voltage vs ON Resistance Normalized On-Resistance 1.6 1.4 VGS=-10V VGS=-4.5V 1.2 1 ID=-3A 0.8 0 25 50 75 100 125 150 175 Temperature (°C) On-Resistance vs. Junction Will Semiconductor Ltd. 3 2015/08/25 – Rev. 1.3 WPM3407 1200 10 VDS=-15V ID=-6A 9 1000 Capacitance (pF) 8 -VGS (Volts) 7 6 5 4 3 2 Ciss 800 600 400 Coss 200 1 Crss 0 0 0 2 4 6 8 10 12 14 16 0 5 10 -Qg (nC) 20 TJ(Max)=150°C TA=25°C TJ(Max)=150°C TA=25°C 30 100Ps Power (W) -ID (Amps) RDS(ON) limited 1ms 0.1s 10ms 1 30 40 10Ps 10 25 Capacitance Characteristics Gate-Charge Characteristics 100 15 -VDS (Volts) 1s 20 10 10s DC 0 0.001 0.1 0.1 1 10 100 0.01 0.1 -VDS (Volts) ZTJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZTJA.RTJA RTJA=40°C/W 10 100 1000 Single Pulse Power Rating Junction-toAmbient (Note E) Maximum Forward Biased Safe Operating Area (Note E) 10 1 Pulse Width (s) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Normalized Maximum Transient Thermal Impedance Will Semiconductor Ltd. 4 2015/08/25 – Rev. 1.3 WPM3407 Avalanche Energy (Single pulsed) Test Circuit & Waveforms EAS=1/2 L*IAR2 Will Semiconductor Ltd. 5 2015/08/25 – Rev. 1.3 WPM3407 Power Dissipation Characteristics 1. The package of WPM3407 is SOT23-3, surface mounted on FR4 Board using 1 in sq pad size， 1 oz Cu，R θJA is 125 ℃/W. 2. The power dissipation PD is based on TJ(MAX)=150°C, and the relation between TJ and PD is TJ = Ta + R θJA* PD , the maximum power dissipation is determined by R θJA . 3. The R θJA is the thermal impedance from junction to ambient, using larger PCB pad size can get smaller R θJA and result in larger maximum power dissipation. 125 ℃/W when mounted on a 1 in2 pad of 1 oz copper. Will Semiconductor Ltd. 6 2015/08/25 – Rev. 1.3 WPM3407 Packaging Information SOT-23-3 Package Outline Dimension Will Semiconductor Ltd. 7 2015/08/25 – Rev. 1.3