WTM2301

MOSFET P-Channel Enhancement Mode Power MOSFET WTM2301 Description ■ The WTM2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. Features ■ V DS = -20V, lD = -3A RDS(ON) < 85mΩ @ VGS=-4.5V RDS(ON) < 78mΩ @ VGS=-10V SOT-23 Top View ■ High power and current handing capability ■ Lead free product is acquired ■ Surface mount package Application ■ Battery protection. ■ Load switch ■ Power management Schematic Diagram Package and order information Device Device Marking Device Package Reel Size Tape width Quantity WTM2301 A1SHB SOT-23 Ø180mm 8 mm 3000 pcs Absolute Maximum Ratings (TA=25℃, RH=45%-75%, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol Value Unit VDS -20 V VGS ±12 V ID -3 A IDM -10 A PD 1 W TJ & TSTG −55 to +150 °C Symbol Value Unit RθJA 125 ℃/W Drain Current-Continuous Drain Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Thermal Characteristic Parameter Thermal Resistance and Junction-to-Ambient (Note 2) Copyright © 2018 WPMTEK INC. 1 Specifications are subject to change without notice. Revised: July 9, 2018 Please refer to http://www.wpmtek.com for updated information. MOSFET P-Channel Enhancement Mode Power MOSFET WTM2301 Electrical Characteristics（TA = 25°C unless otherwise noted） Parameter Symbol Condition Min Typ Max Unit BVDSS VGS=0V ID =-250μA -20 -22 - V Zero Gate Voltage Drain Current IDSS VDS=-20V,VGS=0V - - -1 μA Gate-Body Leakage Current IGSS VGS=±12V,VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID =-250μA -0.4 -0.7 -1 V Drain-Source On-State Resistance RDS(ON) VGS=-4.5V, ID =-3A - 71 85 mΩ VGS =-10V,ID =-2A - 60 78 mΩ VDS=-5V,ID=-2A 5 - - S - 395 - PF - 72 - PF Off Characteristics Drain-Source Breakdown Voltage On Characteristics (Note 3) Forward Transconductance gFS Dynamic Characteristics (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss - 53 - PF Turn-on Delay Time td(on) - 11 - nS Turn-on Rise Time tr - 35 - nS - 30 - nS VDS=-10V,VGS=0V,F=1.0MHz Switching Characteristics (Note 4) Turn-Off Delay Time td(off) VDD =-10V,ID =-1A VGS =-4.5V,RGEN =10Ω Turn-Off Fall Time tf - 10 - nS Total Gate Charge Qg - 3.3 12 nC Gate-Source Charge Qgs - 0.7 - nC Gate-Drain Charge Qgd - 1.3 - nC - - -1.2 V - - -3 A VDS=-10V,ID=-3A,VGS=-2.5V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) Diode Forward Current (Note 2) VSD VGS=0V,IS =1.3A IS Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production Copyright © 2018 WPMTEK INC. 2 Specifications are subject to change without notice. Revised: July 9, 2018 Please refer to http://www.wpmtek.com for updated information. MOSFET P-Channel Enhancement Mode Power MOSFET WTM2301 Typical Electrical and Thermal Characteristics Figure 2 - Switching Waveforms PD Power (W) ID-Drain Current(A) Figure 1 - Switching Test Circuit TJ -Junction Temperature (°C) (°C) Figure 4 - Drain Current Rdson On-Resistance(Ω) ID-Drain Current(A) Figure 3 - Power Dissipation TJ -Junction Temperature Vds Drain-Source Voltage (V) ID-Drain Current(A) Figure 5 - Output Characteristics Figure 6 -Drain-Source On-Resistance Copyright © 2018 WPMTEK INC. 3 Specifications are subject to change without notice. Revised: July 9, 2018 Please refer to http://www.wpmtek.com for updated information. MOSFET ID-Drain Current(A) Normalized On-Resistance P-Channel Enhancement Mode Power MOSFET WTM2301 TJ -Junction Temperature (°C) Vgs Gate-source Voltage(V) Figure 8 – Drain-Source On-Resistance C Capacitance(pF) Rdson On-Resistance(Ω) Figure 7 – Transfer Characteristics Vgs Drain-source Voltage(V) Figure 9 – Rdson vs Vgs Figure 10 – Capacitance vs Vds Is-Reverse Drain Current(A) Vgs Gate-Source Voltage(V) Vgs Gate-source Voltage(V) Qg Gate Charge (nC) Vsd Source-Drain Voltage(V) Figure 11 –Gate Charge Figure 12 –Source-Drain Diode Forward Copyright © 2018 WPMTEK INC. 4 Specifications are subject to change without notice. Revised: July 9, 2018 Please refer to http://www.wpmtek.com for updated information. MOSFET ID- Drain Current(A) P-Channel Enhancement Mode Power MOSFET WTM2301 Vds Drain-Source Voltage(V) Transient Thermal Impedance r(t), Normalized Effective Figure 13 – Safe Operation Area Square Wave Pulse Duration(sec) Figure 14 – Normalized Maximum Transient Thermal Impedance Copyright © 2018 WPMTEK INC. 5 Specifications are subject to change without notice. Revised: July 9, 2018 Please refer to http://www.wpmtek.com for updated information. MOSFET P-Channel Enhancement Mode Power MOSFET WTM2301 Soldering parameters Reflow Condition Pre Heat Pb-Free assembly -Temperature Min (Ts(min)) +150℃ -Temperature Max(Ts(max)) +200℃ -Time (Min to Max) (ts) 60-180 secs. Average ramp up rate (Liquid us Temp (TL) to peak) 3℃/sec. Max Ts(max) to TL - Ramp-up Rate 3℃/sec. Max -Temperature(TL) (Liquid us) +217℃ Reflow -Temperature(tL) 60-150 secs. Peak Temp (Tp) +260(+0/-5)℃ Time within 5℃ of actual Peak Temp (tp) 30 secs. Max Ramp-down Rate 6℃/sec. Max Time 25℃ to Peak Temp (TP) 8 min. Max Do not exceed +260℃ Copyright © 2018 WPMTEK INC. 6 Specifications are subject to change without notice. Revised: July 9, 2018 Please refer to http://www.wpmtek.com for updated information. MOSFET P-Channel Enhancement Mode Power MOSFET WTM2301 Package Outline Dimensions (SOT-23) Symbol Dimensions in Millimeters Min Max A 0.900 1.150 A1 0.000 0.100 A2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 D 2.800 3.000 E 1.200 2.250 1.400 2.550 E1 0.950 TYP e e1 1.800 2.000 0.55 REF L L1 0.300 0.500 θ 0° 8° Recommend PAD Layout Notes: 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. Copyright © 2018 WPMTEK INC. 7 Specifications are subject to change without notice. Revised: July 9, 2018 Please refer to http://www.wpmtek.com for updated information.