VB264K

VB264K www.VBsemi.com P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () VGS(th) (V) ID (mA) - 60 4 at VGS = - 10 V - 1 to - 3 - 185 TO-236 (SOT-23) G 1 APPLICATIONS 3 S • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • High-Side Switching • Low On-Resistance: 4  • Low Threshold: - 2 V (typ.) • Fast Swtiching Speed: 20 ns (typ.) • Low Input Capacitance: 20 pF (typ.) • 2000 V ESD Protection • Compliant to RoHS Directive 2002/95/EC D 2 Top View • Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc. • Battery Operated Systems • Power Supply Converter Circuits • Solid-State Relays BENEFITS • • • • • Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Easily Driven without Buffer ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS - 60 Gate-Source Voltage VGS ± 20 Continuous Drain Currenta TA = 25 °C TA = 100 °C Pulsed Drain Currentb Power Dissipationa Maximum Junction-to-Ambienta Operating Junction and Storage Temperature Range ID IDM TA = 25 °C TA = 100 °C PD Unit V - 185 - 115 mA - 800 350 140 mW RthJA 350 °C/W TJ, Tstg - 55 to 150 °C Notes: a. Surface mounted on FR4 board. b. Pulse width limited by maximum junction temperature. 1 VB264K www.VBsemi.com SPECIFICATIONS TA = 25 °C, unless otherwise noted Limits Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 10 µA - 60 VGS(th) VDS = VGS, ID = - 250 µA -1 Typ.a Max. Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-Resistancea IGSS IDSS ID(on) RDS(on) -3 VDS = 0 V, VGS = ± 20 V ± 10 VDS = 0 V, VGS = ± 10 V ± 200 VDS = 0 V, VGS = ± 10 V, TJ = 85 °C ± 500 VDS = 0 V, VGS = ± 5 V ± 100 VDS = - 60 V, VGS = 0 V - 25 VDS = - 60 V, VGS = 0 V, TJ = 85 °C - 50 VGS = - 10 V, VDS = - 10 V - 600 VGS = - 4.5 V, ID = - 25 mA 5 4 Diode Forward Voltage VDS = - 10 V, ID = - 100 mA VSD IS = - 100 mA, VGS = 0 V nA mA VGS = - 10 V, ID = - 100 mA gfs µA - 250 VGS = - 10 V, VDS = - 4.5 V VGS = - 10 V, ID = - 100 mA, TJ =125 °C Forward Transconductancea V  9 80 mS - 1.4 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 1.7 VDS = - 30 V, VGS = - 15 V ID  - 100 mA 0.26 VDS = - 25 V, VGS = 0 V f = 1 MHz 10 nC 0.46 23 pF 5 Switchingb Turn-On Time td(on) Turn-Off Time td(off) VDD = - 25 V, RL = 150  ID  - 200 mA, VGEN = - 10 V, Rg = 10  20 35 ns Notes: a. Pulse test: PW  300 µs duty cycle  2 %. b. Switching time is essentially independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 VB264K www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.0 1200 VGS = 10 V TJ = - 55 °C 7V 0.8 I D - Drain Current (mA) ID - Drain Current (A) 8V 0.6 6V 0.4 5V 900 25 °C 125 °C 600 300 0.2 4V 0.0 0 0 1 2 3 4 5 0 2 VDS - Drain-to-Source Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 40 20 VGS = 0 V VGS = 4.5 V 32 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 16 12 VGS = 5 V 8 VGS = 10 V 4 Ciss 24 16 Coss 8 Crss 0 0 0 200 400 600 800 0 1000 5 ID - Drain Current (mA) 10 25 Capacitance 15 1.8 ID = 500 mA 1.5 12 VDS = 30 V RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 20 V DS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current VDS = 48 V 9 6 3 0 0.0 15 VGS = 10 V at 500 mA 1.2 VGS = 4.5 V at 25 mA 0.9 0.6 0.3 0.3 0.6 0.9 1.2 Qg - Total Gate Charge (nC) Gate Charge 1.5 1.8 0.0 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 3 VB264K www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 1000 RDS(on) - On-Resistance (Ω) I S - Source Current (A) VGS = 0 V 100 TJ = 125 °C 10 TJ = 25 °C 8 ID = 500 mA 6 4 ID = 200 mA 2 TJ = - 55 °C 0 1 0.00 0.3 0.6 0.9 1.2 V SD - Source-to-Drain Voltage (V) 0 1.5 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-Source Voltage 0.5 3 0.4 2.5 ID = 250 µA 0.3 2 0.2 Power (W) VGS(th) Variance (V) 2 0.1 1.5 - 0.0 1 TA = 25 °C - 0.1 0.5 - 0.2 - 0.3 - 50 0 - 25 0 25 50 75 100 125 150 0.1 0.01 100 10 1 TJ - Junction Temperature (°C) Time (s) Threshold Voltage Variance Over Temperature Single Pulse Power, Junction-to-Ambient 600 Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 350 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 Normalized Thermal Transient Impedance, Junction-to-Ambient 4 100 600 VB264K www.VBsemi.com SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS INCHES Min Max Min Max 0.044 A 0.89 1.12 0.035 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e 0.95 BSC e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.020 Ref 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 5 VB264K www.VBsemi.com 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) 6 0.049 (0.559) (1.245) (0.950) 0.029 0.022 (0.724) 0.037 (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 VB264K www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. 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