0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
SI2309CDS-T1-GE3

SI2309CDS-T1-GE3

  • 厂商:

    VBSEMI(微碧)

  • 封装:

    SOT-23

  • 描述:

    MOS管 P-Channel VDS=60V VGS=±20V ID=5.2A RDS(ON)=50mΩ@10V SOT23

  • 详情介绍
  • 数据手册
  • 价格&库存
SI2309CDS-T1-GE3 数据手册
SI2309CDS-T1-GE3 www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature • Dynamic dV/dt Rating • Low Thermal Resistance • Lead (Pb)-free Available - 60 RDS(on) (Ω) VGS = - 10 V 0.04 Qg (Max.) (nC) 12 Qgs (nC) 3.8 Qgd (nC) 5.1 Configuration Single Available RoHS* COMPLIANT S TO-236 (SOT-23) G G 1 3 S D 2 D P-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque VGS at - 10 V TC = 25 °C TC = 100 °C SYMBOL LIMIT VDS VGS - 60 ± 20 - 5.2 - 3.8 - 21 0.18 120 - 5.2 2.7 27 - 4.5 - 55 to + 175 300d 10 1.1 ID IDM TC = 25 °C for 10 s 6-32 or M3 screw EAS IAR EAR PD dV/dt TJ, Tstg UNIT V A W/°C mJ A mJ W V/ns °C lbf · in N·m Notes a. b. c. d. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). VDD = - 25 V, starting TJ = 25 °C, L = 5.0 mH, RG = 25 Ω, IAS = - 5.3 A (see fig. 12). ISD ≤ - 6.7 A, dI/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 175 °C. 1.6 mm from case. E-mail:China@VBsemi TEL:86-755-83251052 1 SI2309CDS-T1-GE3 www.VBsemi.tw THERMAL RESISTANCE RATINGS SYMBOL TYP. MAX. Maximum Junction-to-Ambient PARAMETER RthJA - 65 Maximum Junction-to-Case (Drain) RthJC - 5.5 UNIT °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage VDS VGS = 0 V, ID = - 250 µA - 60 - - V ΔVDS/TJ Reference to 25 °C, ID = - 1 mA - - 0.060 - V/°C VGS(th) VDS = VGS, ID = - 250 µA - 1.0 - - 2.5 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS Drain-Source On-State Resistance Forward Transconductance RDS(on) gfs VDS = - 60 V, VGS = 0 V - - - 100 VDS = - 48 VGS = 0 V, TJ = 150 °C - - - 500 - 0.05 - Ω 1.6 - - S - 270 - - 170 - - 31 - - 12 - ID = - 3.2 Ab VGS = - 10 V VDS = - 25 V, ID = - 3.2 Ab µA Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Drain to Sink Capacitance VGS = 0 V, VDS = - 25 V, f = 1.0 MHz, see fig. 5 C Total Gate Charge Qg Gate-Source Charge Qgs f = 1.0 MHz VGS = - 10 V ID = - 4.7 A, VDS = - 48 V, see fig. 6 and 13b - - 12 - - 3.8 Gate-Drain Charge Qgd - - 5.1 Turn-On Delay Time td(on) - 11 - - 63 - - 9.6 - - 31 - - 4.5 - - 7.5 - - - - 5.2 - - - 21 - - - 5 .5 Rise Time Turn-Off Delay Time Fall Time tr td(off) VDD = - 30 V, ID = - 4.7 A, RG = 24 Ω, RD= 4.0 Ω, see fig. 10b tf Internal Drain Inductance LD Internal Source Inductance LS Between lead, 6 mm (0.25") from package and center of die contact D pF nC ns nH G S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = - 5.2 A, VGS = 0 Vb TJ = 25 °C, IF = - 4.7 A, dI/dt = 100 A/µsb V - 80 160 ns - 0.096 0.19 µC Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. E-mail:China@VBsemi TEL:86-755-83251052 2 SI2309CDS-T1-GE3 www.VBsemi.tw TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig. 1 - Typical Output Characteristics, TC= 25 °C Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics, TC= 175 °C Fig. 4 - Normalized On-Resistance vs. Temperature E-mail:China@VBsemi TEL:86-755-83251052 3 SI2309CDS-T1-GE3 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage E-mail:China@VBsemi TEL:86-755-83251052 www.VBsemi.tw Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area 4 SI2309CDS-T1-GE3 www.VBsemi.tw RD VDS VGS D.U.T. RG +VDD - 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit td(on) td(off) tf tr VGS 10 % 90 % VDS Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case L Vary tp to obtain required IAS IAS VDS D.U.T. RG VDS + V DD VDD IAS tp - 10 V tp 0.01 Ω VDS Fig. 12a - Unclamped Inductive Test Circuit E-mail:China@VBsemi TEL:86-755-83251052 Fig. 12b - Unclamped Inductive Waveforms 5 SI2309CDS-T1-GE3 www.VBsemi.tw Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG - 10 V 12 V 0.2 µF 0.3 µF QGS - QGD D.U.T. VG + VDS VGS - 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform E-mail:China@VBsemi TEL:86-755-83251052 Fig. 13b - Gate Charge Test Circuit 6 SI2309CDS-T1-GE3 www.VBsemi.tw Peak Diode Recovery dV/dt Test Circuit D.U.T. + Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - RG + • dV/dt controlled by RG • ISD controlled by duty factor "D" • D.U.T. - device under test + - VDD Compliment N-Channel of D.U.T. for driver Driver gate drive P.W. Period D= P.W. Period VGS = - 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage VDD Body diode forward drop Inductor current Ripple ≤ 5 % * ISD VGS = - 5 V for logic level and - 3 V drive devices Fig. 14 - For P-Channel E-mail:China@VBsemi TEL:86-755-83251052 7 SI2309CDS-T1-GE3 www.VBsemi.tw SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS INCHES Min Max Min Max A 0.89 1.12 0.035 0.044 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e 0.95 BSC e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.020 Ref 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 E-mail:China@VBsemi TEL:86-755-83251052 8 SI2309CDS-T1-GE3 www.VBsemi.tw 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) E-mail:China@VBsemi TEL:86-755-83251052 9 SI2309CDS-T1-GE3 www.VBsemi.tw Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives ( collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: ( 1) any application and all liability arising out of or use of any products; ( 2) any and all liability, including but not limited to special, consequential damages or incidental ; ( 3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be R oHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 R i Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. E-mail:China@VBsemi TEL:86-755-83251052 10
SI2309CDS-T1-GE3
1. 物料型号:SI2309CDS-T1-GE3 2. 器件简介: - 这是一个P-Channel MOSFET,具有隔离封装。 - 它具有2.5 kVRMS的高电压隔离,175°C的工作温度,低热阻,并且符合RoHS标准。 - 封装为TO-236 (SOT-23)。

3. 引脚分配: - G(栅极) - D(漏极) - S(源极)

4. 参数特性: - 漏源电压VDs最高为-60V。 - 栅源电压Vas为±20V。 - 连续漏电流在25°C时为-5.2A,100°C时为-3.8A。 - 脉冲漏电流为-21A。 - 最大功耗为27W。 - 峰值二极管恢复dV/dt为-4.5V/ns。

5. 功能详解: - 该MOSFET具有动态dV/dt评级,意味着它可以处理快速电压变化。 - 它还具有线性退率因子,用于计算温度对连续漏电流的影响。 - 重复雪崩电流和能量,以及单次雪崩能量,都是评估器件在雪崩条件下性能的重要参数。

6. 应用信息: - 适用于需要高电压隔离的应用场合。 - 由于其低热阻和高工作温度,适用于高温环境。

7. 封装信息: - 采用SOT-23封装,具有3个引脚:栅极、漏极和源极。 - 提供了详细的封装尺寸和推荐的最小焊盘尺寸。
SI2309CDS-T1-GE3 价格&库存

很抱歉,暂时无法提供与“SI2309CDS-T1-GE3”相匹配的价格&库存,您可以联系我们找货

免费人工找货
SI2309CDS-T1-GE3
  •  国内价格
  • 1+1.10740
  • 30+1.06785
  • 100+1.02830
  • 500+0.94920
  • 1000+0.90965
  • 2000+0.88592

库存:0