PJM3400NSC

PJM3400NSC N- Enhancement Mode Field Effect Transistor SOT-23-3 Features   VDS = 30V,ID = 5.8A RDS(ON) < 45mΩ @ VGS=2.5V RDS(ON) < 31mΩ @ VGS=4.5V RDS(ON) < 27mΩ @ VGS=10V High power and current handing capability 2 3 1 1. Gate 2.Source 3.Drain Marking: P0 Applications  Load switch and in PWM applications  Power management Schematic diagram 3Drain 1 Gate 2 Source Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±12 V Drain Current-Continuous ID 5.8 A Drain Current-Pulsed Note1 IDM 30 A Maximum Power Dissipation PD 1.4 W TJ,TSTG 150,-55 To 150 ℃ RθJA 89 ℃/W Operating Junction and Storage Temperature Range Thermal Characteristics Thermal Resistance,Junction-to-Ambient Note2 www.pingjingsemi.com Revision：1.0 May-2019 1/7 PJM3400NSC N- Enhancement Mode Field Effect Transistor Electrical Characteristics (TA=25℃ unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage V(BR)DSS VGS=0V ID=250μA 30 - - V Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±12V,VDS=0V - - ±100 nA VGS(th) VDS=VGS,ID=250μA 0.7 0.9 1.4 V VGS=2.5V, ID=4A - - 45 mΩ VGS=4.5V, ID=5A - - 31 mΩ VGS=10V, ID=5.8A - - 27 mΩ VDS=5V,ID=5A 10 - - S - 825 - pF - 100 - pF - 78 - pF - 3.3 - nS - 4.8 - nS - 26 - nS - 4 - nS - 10 - nC - 1.6 - nC - 3.1 - nC - - 1.2 V - - 5.8 A Static Characteristics Gate Threshold Voltage Note3 Drain-Source On-State Resistance Note3 Forward Transconductance Note3 RDS(ON) gFS Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=15V,VGS=0V, f=1.0MHz Switching Characteristics Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDD=15V, RL=2.7Ω VGS=10V,RGEN=3Ω VDS=15V,ID=5.8A, VGS=4.5V Drain-Source Diode Characteristics Diode Forward Voltage Note3 Diode Forward Current Note2 VSD VGS=0V,IS=5.8A IS Notes: 1. 2. 3. Repetitive Rating: Pulse width limited by maximum junction temperature. Surface Mounted on FR4 Board, t ≤ 10 sec. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. www.pingjingsemi.com Revision：1.0 May-2019 2/7 PJM3400NSC N- Enhancement Mode Field Effect Transistor PD Power(W) ID- Drain Current (A） Typical Characteristics Curves TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Drain Current ID- Drain Current (A) Rdson On-Resistance(Ω) Power Dissipation ID- Drain Current (A) Vds Drain-Source Voltage (V) Drain-Source On-Resistance ID- Drain Current (A) Normalized On-Resistance Output Characteristics Vgs Gate-Source Voltage (V) TJ-Junction Temperature(℃) Transfer Characteristics Drain-Source On-Resistance www.pingjingsemi.com Revision：1.0 May-2019 3/7 C Capacitance (pF) Rdson On-Resistance(Ω) PJM3400NSC N- Enhancement Mode Field Effect Transistor Vds Drain-Source Voltage (V) Rdson vs Vgs Capacitance vs Vds Vgs Gate-Source Voltage (V) Is- Reverse Drain Current (A) Vgs Gate-Source Voltage (V) Qg Gate Charge (nC) Vsd Source-Drain Voltage (V) Gate Charge Source- Drain Diode Forward www.pingjingsemi.com Revision：1.0 May-2019 4/7 PJM3400NSC N- Enhancement Mode Field Effect Transistor Package Outline SOT-23-3 Dimensions in mm 2.8 1.6 10 12 0.95 0.35 0.127± 0.03 ± 0.01 A ±0.1 ±0.05 2.92 ± 0.05 R0.15MAX `4X R0.15MAX `4X 1.26MAX 0.06 12 ± 0.05 ± 0.03 0.65 1.1 ± 0.05 10 Ordering Information Device PJM3400NSC www.pingjingsemi.com Revision：1.0 May-2019 Package SOT-23-3 Shipping 3000/Reel&Tape(7inch) 5/7 PJM3400NSC N- Enhancement Mode Field Effect Transistor Conditions of Soldering and Storage Recommended condition of reflow soldering  (°C) Peak Temperature 245 to 260°C, 10s max. 250 Reflow Heating Rate 1 to 5°C / s Temperature 200 150 100 50 Pre Heating Rate Preliminary Heating 1 to 5°C / s 130 to 170°C, 50 to 120s Soldering 230°C, 20 to 30s Cooling 60s min. Figure 0 2 times max. Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 OC  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 OC  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revision：1.0 May-2019 6/7 PJM3400NSC N- Enhancement Mode Field Effect Transistor Package Specifications Cover Tape 3,000 pcs per reel SOT-23-3 Carrier Tape 30,000 pcs per box 10 reels per box 240 217 0 21 43 5 120,000 pcs per carton 4 boxes per carton 455 220 2. Tape and reel data(7inch Units:mm) D A 3000 T2 T1 2900 2000 1900 1000 600 B C E PS F 1.10±0.10 Pin1 Revision：1.0 May-2019 N 3.2±0.10（Bo） 8 MAX 0.75 1.40±0.10（Ko） B-B Tape (8mm) www.pingjingsemi.com 0.46 0.2 8 MAX B 4.00±0.10 0.25±0.02（T） 2.45 1.55±0.05 3.50±0.05 2.00±0.05 8 ± 0 .1 0 4.00±0.10 B 1.75±0.10 Reel (7'') Symbol A B C E F D T1 T2 N G Value (unit: mm) Ø 177.8±1 2.7±0.2 Ø 13.5±0.2 Ø 54.5±0.2 12.3±0.3 9.6+2/-0.3 1.0±0.2 1.2±0.2 3.15±0.1 1.22±0.1 7/7