PJM2302NSC
N- Enhancement Mode Field Effect Transistor
SOT-23-3
Features
VDS = 20V,ID = 4A
RDS(ON) < 55mΩ @ VGS=2.5V
RDS(ON) < 40mΩ @ VGS=4.5V
Low Gate Charge and RDS(on)
High power and current handing capability
2
3
1
1. Gate
2.Source 3.Drain
Marking: Q2
Applications
Load switch and in PWM applications
Power management
Schematic diagram
3Drain
1
Gate
2 Source
Absolute Maximum Ratings
Ratings at 25℃ ambient temperature unless otherwise specified.
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±12
V
Drain Current-Continuous
ID
4
A
Drain Current-Pulsed Note1
IDM
20
A
Maximum Power Dissipation
PD
1.25
W
TJ,TSTG
150,-55 To 150
℃
RθJA
100
℃/W
Operating Junction and Storage Temperature Range
Thermal Characteristics
Thermal Resistance,Junction-to-Ambient Note2
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PJM2302NSC
N- Enhancement Mode Field Effect Transistor
Electrical Characteristics
(TA=25℃ unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
V(BR)DSS
VGS=0V ID=250μA
20
-
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=20V,VGS=0V
-
-
1
μA
Gate-Body Leakage Current
IGSS
VGS=±12V,VDS=0V
-
-
±100
nA
Gate Threshold Voltage Note3
VGS(th)
VDS=VGS,ID=250μA
0.5
0.8
1.2
V
Drain-Source On-State Resistance Note3
RDS(ON)
VGS=2.5V, ID=2.8A
-
-
55
mΩ
VGS=4.5V, ID=3A
-
-
40
mΩ
VDS=5V,ID=3A
-
8
-
S
-
300
-
pF
-
120
-
pF
Static Characteristics
Forward Transconductance Note3
gFS
Dynamic Characteristics
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
-
80
-
pF
Turn-on Delay Time
td(on)
-
10
-
nS
Turn-on Rise Time
tr
-
50
-
nS
-
17
-
nS
-
10
-
nS
-
4
-
nC
-
0.7
-
nC
-
1.5
-
nC
-
-
1.2
V
-
-
4
A
VDS=10V,VGS=0V,
f=1.0MHz
Switching Characteristics
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDD=10V,
ID=3A
VGS=4.5V,RGEN=6Ω
VDS=10V,ID=3A,
VGS=4.5V
Drain-Source Diode Characteristics
Diode Forward Voltage Note 3
VSD
Diode Forward Current Note 2
IS
VGS=0V,IS=4A
Notes:
1.
2.
3.
Repetitive Rating: Pulse width limited by maximum junction temperature.
Surface Mounted on FR4 Board, t ≤ 10 sec.
Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
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PJM2302NSC
N- Enhancement Mode Field Effect Transistor
Typical Characteristics Curves
Vdd
Vgs
Rgen
td(
d(on
on))
RI
Vin
D
ton
tr
td(of
d(off)
f)
90%
90
%
Vout
VOUT
G
toff
tf
90%
90
%
INVER
IN
VERT
TED
10%
10%
10%
10
%
90%
90
%
S
VIN
50%
50
%
50%
50
%
10%
10
%
PULSE WID
WIDT
TH
Figure 2:Switching Waveforms
PD Power(W)
ID- Drain Current (A)
Figure 1:Switching Test Circuit
TJ-Junction Temperature(℃)
TJ-Junction Temperature(℃)
Figure 3 Power Dissipation
ID- Drain Current (A)
Rdson On-Resistance(mΩ)
Figure 4 Drain Current
Vds Drain-Source Voltage (V)
Figure 5 Output Characteristics
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Revision:1.0 Jun-2019
ID- Drain Current (A)
Figure 6 Drain-Source On-Resistance
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ID- Drain Current (A)
Normalized On-Resistance
PJM2302NSC
N- Enhancement Mode Field Effect Transistor
TJ-Junction Temperature(℃)
Vgs Gate-Source Voltage (V)
Figure 8 Drain-Source On-Resistance
C Capacitance (pF)
Rdson On-Resistance(mΩ)
Figure 7 Transfer Characteristics
Vgs Gate-Source Voltage (V)
Vds Drain-Source Voltage (V)
Figure 10 Capacitance vs Vds
Vgs Gate-Source Voltage (V)
Is- Reverse Drain Current (A)
Figure 9 Rdson vs Vgs
Qg Gate Charge (nC)
Figure 11 Gate Charge
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Revision:1.0 Jun-2019
Vsd Source-Drain Voltage (V)
Figure 12 Source- Drain Diode Forward
4/7
PJM2302NSC
N- Enhancement Mode Field Effect Transistor
Package Outline
SOT-23-3
Dimensions in mm
2.8
1.6
10
12
0.95
0.35
0.127± 0.03
± 0.01
A
±0.1
±0.05
2.92 ± 0.05
R0.15MAX
`4X
R0.15MAX
`4X
1.26MAX
0.06
12
± 0.05
± 0.03
0.65
1.1
± 0.05
10
Ordering Information
Device
PJM2302NSC
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Revision:1.0 Jun-2019
Package
SOT-23-3
Shipping
3000/Reel&Tape(7inch)
5/7
PJM2302NSC
N- Enhancement Mode Field Effect Transistor
Conditions of Soldering and Storage
Recommended condition of reflow soldering
(°C)
Peak Temperature
245 to 260°C, 10s max.
250
Reflow Heating Rate
1 to 5°C / s
Temperature
200
150
100
50
Pre Heating Rate
Preliminary Heating
1 to 5°C / s
130 to 170°C, 50 to 120s
Soldering
230°C, 20 to 30s
Cooling
60s min.
Figure
0
2 times max.
Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust
the following parameters:
Time length of peak temperature (longer)
Time length of soldering (longer)
Thickness of solder paste (thicker)
Conditions of hand soldering
Temperature: 370 OC
Time: 3s max.
Times: one time
Storage conditions
Temperature
5 to 40 OC
Humidity
30 to 80% RH
Recommended period
One year after manufacturing
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PJM2302NSC
N- Enhancement Mode Field Effect Transistor
Package Specifications
Cover Tape
3,000 pcs per reel
SOT-23-3
Carrier Tape
30,000 pcs per box
10 reels per box
240
217
0
21
43
5
120,000 pcs per carton
4 boxes per carton
455
220
2. Tape and reel data(7inch Units:mm)
D
A
3000
T2
T1
2900
2000
1900
1000
600
B
C
E
PS
F
1.10±0.10
Pin1
Revision:1.0 Jun-2019
N
3.2±0.10(Bo)
8 MAX
0.75
1.40±0.10(Ko)
B-B
Tape (8mm)
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0.46
0.2
8 MAX
B
4.00±0.10
0.25±0.02(T)
2.45
1.55±0.05
3.50±0.05
2.00±0.05
8 ± 0 .1 0
4.00±0.10
B
1.75±0.10
Reel (7'')
Symbol
A
B
C
E
F
D
T1
T2
N
G
Value (unit: mm)
Ø 177.8±1
2.7±0.2
Ø 13.5±0.2
Ø 54.5±0.2
12.3±0.3
9.6+2/-0.3
1.0±0.2
1.2±0.2
3.15±0.1
1.22±0.1
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