PJM2302NSC

厂商：
PJ(平晶)
封装：
SOT-23
描述：
Load switch and in PWM applicationsPower managemen

数据手册：

下载PJM2302NSC.pdf

立即购买

详情介绍
数据手册
价格&库存

PJM2302NSC 数据手册

PJM2302NSC N- Enhancement Mode Field Effect Transistor SOT-23-3 Features    VDS = 20V,ID = 4A RDS(ON) < 55mΩ @ VGS=2.5V RDS(ON) < 40mΩ @ VGS=4.5V Low Gate Charge and RDS(on) High power and current handing capability 2 3 1 1. Gate 2.Source 3.Drain Marking: Q2 Applications  Load switch and in PWM applications  Power management Schematic diagram 3Drain 1 Gate 2 Source Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Drain Current-Continuous ID 4 A Drain Current-Pulsed Note1 IDM 20 A Maximum Power Dissipation PD 1.25 W TJ,TSTG 150,-55 To 150 ℃ RθJA 100 ℃/W Operating Junction and Storage Temperature Range Thermal Characteristics Thermal Resistance,Junction-to-Ambient Note2 www.pingjingsemi.com Revision：1.0 Jun-2019 1/7 PJM2302NSC N- Enhancement Mode Field Effect Transistor Electrical Characteristics (TA=25℃ unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage V(BR)DSS VGS=0V ID=250μA 20 - - V Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±12V,VDS=0V - - ±100 nA Gate Threshold Voltage Note3 VGS(th) VDS=VGS,ID=250μA 0.5 0.8 1.2 V Drain-Source On-State Resistance Note3 RDS(ON) VGS=2.5V, ID=2.8A - - 55 mΩ VGS=4.5V, ID=3A - - 40 mΩ VDS=5V,ID=3A - 8 - S - 300 - pF - 120 - pF Static Characteristics Forward Transconductance Note3 gFS Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss - 80 - pF Turn-on Delay Time td(on) - 10 - nS Turn-on Rise Time tr - 50 - nS - 17 - nS - 10 - nS - 4 - nC - 0.7 - nC - 1.5 - nC - - 1.2 V - - 4 A VDS=10V,VGS=0V, f=1.0MHz Switching Characteristics Turn-Off Delay Time td(off) Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDD=10V, ID=3A VGS=4.5V,RGEN=6Ω VDS=10V,ID=3A, VGS=4.5V Drain-Source Diode Characteristics Diode Forward Voltage Note 3 VSD Diode Forward Current Note 2 IS VGS=0V,IS=4A Notes: 1. 2. 3. Repetitive Rating: Pulse width limited by maximum junction temperature. Surface Mounted on FR4 Board, t ≤ 10 sec. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. www.pingjingsemi.com Revision：1.0 Jun-2019 2/7 PJM2302NSC N- Enhancement Mode Field Effect Transistor Typical Characteristics Curves Vdd Vgs Rgen td( d(on on)) RI Vin D ton tr td(of d(off) f) 90% 90 % Vout VOUT G toff tf 90% 90 % INVER IN VERT TED 10% 10% 10% 10 % 90% 90 % S VIN 50% 50 % 50% 50 % 10% 10 % PULSE WID WIDT TH Figure 2:Switching Waveforms PD Power(W) ID- Drain Current (A） Figure 1:Switching Test Circuit TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure 3 Power Dissipation ID- Drain Current (A) Rdson On-Resistance(mΩ) Figure 4 Drain Current Vds Drain-Source Voltage (V) Figure 5 Output Characteristics www.pingjingsemi.com Revision：1.0 Jun-2019 ID- Drain Current (A) Figure 6 Drain-Source On-Resistance 3/7 ID- Drain Current (A) Normalized On-Resistance PJM2302NSC N- Enhancement Mode Field Effect Transistor TJ-Junction Temperature(℃) Vgs Gate-Source Voltage (V) Figure 8 Drain-Source On-Resistance C Capacitance (pF) Rdson On-Resistance(mΩ) Figure 7 Transfer Characteristics Vgs Gate-Source Voltage (V) Vds Drain-Source Voltage (V) Figure 10 Capacitance vs Vds Vgs Gate-Source Voltage (V) Is- Reverse Drain Current (A) Figure 9 Rdson vs Vgs Qg Gate Charge (nC) Figure 11 Gate Charge www.pingjingsemi.com Revision：1.0 Jun-2019 Vsd Source-Drain Voltage (V) Figure 12 Source- Drain Diode Forward 4/7 PJM2302NSC N- Enhancement Mode Field Effect Transistor Package Outline SOT-23-3 Dimensions in mm 2.8 1.6 10 12 0.95 0.35 0.127± 0.03 ± 0.01 A ±0.1 ±0.05 2.92 ± 0.05 R0.15MAX `4X R0.15MAX `4X 1.26MAX 0.06 12 ± 0.05 ± 0.03 0.65 1.1 ± 0.05 10 Ordering Information Device PJM2302NSC www.pingjingsemi.com Revision：1.0 Jun-2019 Package SOT-23-3 Shipping 3000/Reel&Tape(7inch) 5/7 PJM2302NSC N- Enhancement Mode Field Effect Transistor Conditions of Soldering and Storage Recommended condition of reflow soldering  (°C) Peak Temperature 245 to 260°C, 10s max. 250 Reflow Heating Rate 1 to 5°C / s Temperature 200 150 100 50 Pre Heating Rate Preliminary Heating 1 to 5°C / s 130 to 170°C, 50 to 120s Soldering 230°C, 20 to 30s Cooling 60s min. Figure 0 2 times max. Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 OC  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 OC  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revision：1.0 Jun-2019 6/7 PJM2302NSC N- Enhancement Mode Field Effect Transistor Package Specifications Cover Tape 3,000 pcs per reel SOT-23-3 Carrier Tape 30,000 pcs per box 10 reels per box 240 217 0 21 43 5 120,000 pcs per carton 4 boxes per carton 455 220 2. Tape and reel data(7inch Units:mm) D A 3000 T2 T1 2900 2000 1900 1000 600 B C E PS F 1.10±0.10 Pin1 Revision：1.0 Jun-2019 N 3.2±0.10（Bo） 8 MAX 0.75 1.40±0.10（Ko） B-B Tape (8mm) www.pingjingsemi.com 0.46 0.2 8 MAX B 4.00±0.10 0.25±0.02（T） 2.45 1.55±0.05 3.50±0.05 2.00±0.05 8 ± 0 .1 0 4.00±0.10 B 1.75±0.10 Reel (7'') Symbol A B C E F D T1 T2 N G Value (unit: mm) Ø 177.8±1 2.7±0.2 Ø 13.5±0.2 Ø 54.5±0.2 12.3±0.3 9.6+2/-0.3 1.0±0.2 1.2±0.2 3.15±0.1 1.22±0.1 7/7

下载 PDF

PJM2302NSC

物料型号：PJM2302NSC 器件简介：N-增强型模式场效应晶体管封装类型：SOT-23-3

引脚分配： 1. Gate（栅极） 2. Source（源极） 3. Drain（漏极）标记：Q2

参数特性： - 漏源电压（VDS）= 20V - 漏极电流（ID）= 4A - 在VGS=2.5V时，RDS(ON) < 55mΩ - 在VGS=4.5V时，RDS(ON) < 40mΩ - 低栅极电荷和RDS(on)，高功率和电流处理能力

功能详解： - 适用于负载开关和PWM应用 - 电源管理

应用信息： - 负载开关和PWM应用 - 电源管理

封装信息： - 封装类型：SOT-23-3 - 尺寸（单位：mm）：2.92 x 2.8 x 1.27 - 订购信息：每卷3000个，带7英寸卷轴

绝对最大额定值： - 漏源电压（VDs）：20V - 栅源电压（VGs）：±12V - 连续漏极电流（ID）：4A - 脉冲漏极电流（IoM）：20A - 最大功率耗散（PD）：1.25W - 工作结和存储温度范围（TJ,TSTG）：-55至150°C

热特性： - 结到环境的热阻（RBJA）：100°C/W

电气特性： - 静态特性包括漏源击穿电压、零栅极电压漏极电流、栅体漏电流、栅极阈值电压和漏源导通电阻等。 - 动态特性包括输入电容、输出电容和反向传输电容。 - 开关特性包括开通延迟时间、开通上升时间、关断延迟时间和关断下降时间。

典型特性曲线： - 提供了关于开关测试电路、开关波形、功率耗散、漏极电流、输出特性和漏源导通电阻的图表。