AC2302

AC2302 亚芯电子（深圳）有限公司 B N02B 20V /3A Single N Power MOSFET 3N02B N V General Description DS RDS(on),TYP@VGS=10V RDS(on),TYP@VGS=4.5 ID 20V /3A Single N Power MOSFET Very low on-resistance RDS(on) @ VGS=4.5 V Pb-free lead plating; RoHS compliant Part ID Package Type Marking Tape and reel infomation AC2302 SOT23-3 2302 3000 Parameter 20 V 43.4 mΩ 70.0 mΩ 3 A 100% UIS Tested 100% Rg Tested Symbol Maximum Units Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS 8 ±V Continuous Drain Current A Pulsed Drain Current Avalanche Current TA=25°C TA=70°C B Power Dissipation G 4.8 IAR 1.0 EAR 2.2 TA=25°C A A mJ 1.4 PD TA=70°C Junction and Storage Temperature Range 2.5 IDM G Repetitive avalanche energy L=0.1mH 3.0 ID W 0.9 -55 to 150 TJ, TSTG °C Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A Steady State Maximum Junction-to-Lead www.asiachip.cn C Steady State 第 1 页，共 4 页 RθJA RθJL Typ Max Units 155 232 °C/W 310 372 °C/W 93 148 °C/W Rev0：Oct 2018 AC2302 亚芯电子（深圳）有限公司 20V /3A Single N Power MOSFET STATIC PARAMETERS Symbol BVDSS Parameter Drain-Source Breakdown Voltage Conditions ID = -250uA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS=20V, VGS=0V IGSS Gate-Body leakage current VDS = 0V, VGS = ±20V VGS(th) Gate Threshold Voltage VDS = VGS ID = 250µA RDS(ON) Static Drain-Source OnResistance gFS VSD Min Typ Max Units 20 V 1 5 uA ±100 nA 0.8 1 V VGS=-4.5V, ID=3A 43.4 62.0 VGS=2.5V, ID=3A 70.0 85.0 Forward Transconductance VDS=5V, ID=3A 68 Diode Forward Voltage IS=1A,VGS=3V 0.72 0.5 S 1 V 3 A Typ Max Units 260 317 pF 48 59 pF 27 32 pF 0.3 Ω Max Units Maximum Body-Diode Continuous Current IS mΩ DYNAMIC PARAMETERS Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Conditions Min VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Symbol Parameter Qg (10V) Total Gate Charge Qg 4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge 0.6 tD(on) Turn-On DelayTime 7 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time Body Diode Reverse Recovery Time trr Qrr Body Diode Reverse Recovery Charge www.asiachip.cn Conditions Min Typ 2.9 VGS=10V, VDS=15V, ID=3A VGS=10V, VDS=15V,RL=0.75Ω, RGEN=3Ω 1.45 0.42 5.6 19.6 nC ns 6.3 IF=-8A, dI/dt=500A/µs 14 ns IF=18A, dI/dt=500A/µs 3.8 nC 第 2 页，共 4 页 Rev0：Oct 2018 亚芯电子（深圳）有限公司 www.asiachip.cn 第 3 页，共 4 页 AC2302 20V /3A Single N Power MOSFET Rev0：Oct 2018 亚芯电子（深圳）有限公司 www.asiachip.cn 第 4 页，共 4 页 AC2302 20V /3A Single N Power MOSFET Rev0：Oct 2018