AC3415A

AC3415A 亚芯电子（深圳）有限公司 B F02B -20V /-5A Single P Power MOSFET 5F02B F V General Description DS RDS(on),TYP@VGS=10V RDS(on),TYP@VGS=4.5 ID -20V /-5A Single P Power MOSFET Very low on-resistance RDS(on) @ VGS=4.5 V Pb-free lead plating; RoHS compliant Part ID Package Type Marking Tape and reel infomation AC3415A SOT23-3 3415 3000 Parameter -20 V 28.7 mΩ 53.0 mΩ -5 A 100% UIS Tested 100% Rg Tested Symbol Maximum Units Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS 8 ±V Continuous Drain Current A Pulsed Drain Current Avalanche Current TA=25°C TA=70°C B Power Dissipation G -8.0 IAR -1.6 EAR -3.7 TA=25°C A A mJ 1.5 PD TA=70°C Junction and Storage Temperature Range -4.0 IDM G Repetitive avalanche energy L=0.1mH -5.0 ID W 1 -55 to 150 TJ, TSTG °C Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A Steady State Maximum Junction-to-Lead www.asiachip.cn C Steady State 第 1 页，共 4 页 RθJA RθJL Typ Max Units 102 153 °C/W 205 246 °C/W 61 98 °C/W Rev0：Oct 2018 亚芯电子（深圳）有限公司 AC3415A -20V /-5A Single P Power MOSFET STATIC PARAMETERS Symbol BVDSS Parameter Drain-Source Breakdown Voltage Conditions ID = -250uA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS=-20V, VGS=0V IGSS Gate-Body leakage current VDS = 0V, VGS = ±20V VGS(th) Gate Threshold Voltage VDS = VGS ID = 250µA RDS(ON) Static Drain-Source OnResistance gFS VSD Min Typ Max Units -20 V -1 -5 uA ±100 nA -0.7 -0.9 V VGS=-4.5V, ID=-5A 28.7 41.0 VGS=-2.5V, ID=-5A 53.0 65.0 Forward Transconductance VDS=-5V, ID=-5A 56 Diode Forward Voltage IS=-1A,VGS=0V -0.72 -0.5 S -1 V -5 A Typ Max Units 751 916 pF 115 141 pF 80 95 pF 1.1 Ω Max Units Maximum Body-Diode Continuous Current IS mΩ DYNAMIC PARAMETERS Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Conditions Min VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Symbol Parameter Qg (10V) Total Gate Charge Qg 4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge 2.2 tD(on) Turn-On DelayTime 13 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time Body Diode Reverse Recovery Time trr Qrr Body Diode Reverse Recovery Charge www.asiachip.cn Conditions Min Typ 9.3 VGS=-10V, VDS=-15V, ID=-5A VGS=-10V, VDS=-15V,RL=0.75 Ω, RGEN=3Ω 4.65 1.54 10.4 36.4 nC ns 11.7 IF=-8A, dI/dt=500A/µs 26 ns IF=18A, dI/dt=500A/µs 51 nC 第 2 页，共 4 页 Rev0：Oct 2018 亚芯电子（深圳）有限公司 www.asiachip.cn 第 3 页，共 4 页 AC3415A -20V /-5A Single P Power MOSFET Rev0：Oct 2018 亚芯电子（深圳）有限公司 www.asiachip.cn 第 4 页，共 4 页 AC3415A -20V /-5A Single P Power MOSFET Rev0：Oct 2018