PJM3416NSA

PJM3416NSA N-Channel Enhancement Mode Power MOSFET SOT-23 Features ⚫ ESD protected(HBM) up to 2KV ⚫ High power and current handing capability ⚫ VDS= 20V,ID= 6.5A RDS(on)< 22mΩ @VGS= 4.5V 1. Gate 2.Source 3.Drain Marking Code:R16 Applications Schematic Diagram 3.Drain ⚫ Load switch ⚫ PWM applications 1.Gate 2.Source Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±8 V Drain Current-Continuous ID 6.5 A Drain Current-Pulsed Note1 IDM 30 A Maximum Power Dissipation PD 1.2 W Junction Temperature TJ 150 °C TSTG -55 to +150 °C RθJA 104 °C/W Storage Temperature Range Thermal Characteristics Thermal Resistance,Junction-to-Ambient Note2 www.pingjingsemi.com Revision：2.0 Jul-2021 1/7 PJM3416NSA N-Channel Enhancement Mode Power MOSFET Electrical Characteristics (Ta=25℃ unless otherwise specified) Parameter Symbol Test Condition Min. Typ. Max. Unit Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250μA 20 -- -- V Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V -- -- 1 μA Gate-Body Leakage Current IGSS VGS=±8V,VDS=0V -- -- ±10 μA Gate Threshold Voltage Note3 VGS(th) VDS=VGS,ID=250μA 0.45 0.7 1 V Drain-Source On-Resistance Note3 RDS(on) VGS=4.5V,ID=6.5A -- 17 22 mΩ VGS=2.5V,ID=5.5A -- 21 26 mΩ VDS=5V,ID=2A 8 -- -- S -- 660 -- pF -- 160 -- pF Static Characteristics Forward Transconductance Note3 gFS Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss -- 87 -- pF Turn-on Delay Time td(on) -- 0.5 -- nS Turn-on Rise Time tr VDD=10V,RL=1.5Ω, -- 1 -- nS Turn-off Delay Time td(off) VGS=5V,RGEN=3Ω -- 12 -- nS VDS=10V,VGS=0V,f=1MHz Switching Characteristics Turn-off Fall Time tf -- 4 -- nS Total Gate Charge Qg -- 8 -- nC Gate-Source Charge Qgs -- 2.5 -- nC Gate-Drain Charge Qgd -- 3 -- nC -- -- 1.2 V -- -- 6.5 A VDS=10V,ID=6.5A, VGS=4.5V Source-Drain Diode Characteristics Diode Forward Voltage Note3 VSD Diode Forward Current Note2 IS VGS=0V,IS=6.5A Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse width≤300μs, duty cycle≤2%. www.pingjingsemi.com Revision：2.0 Jul-2021 2/7 PJM3416NSA N-Channel Enhancement Mode Power MOSFET Typical Characteristic Curves ID Drain Current (A) RDS(on) On-Resistance (mΩ) 30 25 20 15 10 0 2 6 8 10 ID Drain Current (A) Normalized On-Resistance ID Drain Current (A) VDS Drain-Source Voltage (V) 4 125℃ 25℃ VGS Gate-Source Voltage (V) TJ Junction Temperature (℃) 50 C Capacitance (pF) RDS(on) On-Resistance (mΩ) 60 40 30 125℃ 20 25℃ 2 4 6 VGS Gate-Source Voltage (V) www.pingjingsemi.com Revision：2.0 Jul-2021 Coss Crss 10 0 Ciss 8 VDS Drain-Source Voltage (V) 3/7 IS Reverse Drain Current (A) VGS Gate-Source Voltage (V) PJM3416NSA N-Channel Enhancement Mode Power MOSFET 25℃ VSD Source-Drain Voltage (V) ID Drain Current (A) Qg Gate Charge (nC) 125℃ VDS Drain-Source Voltage (V) www.pingjingsemi.com Revision：2.0 Jul-2021 4/7 PJM3416NSA N-Channel Enhancement Mode Power MOSFET Package Outline SOT-23 Dimensions in mm Ordering Information Device Package Shipping PJM3416NSA SOT-23 3,000PCS/Reel&7inches www.pingjingsemi.com Revision：2.0 Jul-2021 5/7 PJM3416NSA N-Channel Enhancement Mode Power MOSFET Conditions of Soldering and Storage  Recommended condition of reflow soldering Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 OC  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 OC  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revision：2.0 Jul-2021 6/7 PJM3416NSA N-Channel Enhancement Mode Power MOSFET Package Specifications  The method of packaging Cover Tape 3,000 pcs per reel SOT-23 Carrier Tape 30,000 pcs per box 10 reels per box 120,000 pcs per carton 4 boxes per carton  Embossed tape and reel data D A T2 T1 Symbol A B C E F D T1 T2 B C E Value (unit: mm) Ø 177.8±1 2.7±0.2 Ø 13.5±0.2 Ø 54.5±0.2 12.3±0.3 9.6+2/-0.3 1.0±0.2 1.2±0.2 F Reel (7'') www.pingjingsemi.com Revision：2.0 Jul-2021 7/7