PJM60H12MNSA

PJM60H12MNSA N- Channel Depletion Mode MOSFETS SOT-23 Features ⚫ Halogen and Antimony Free ⚫ Depletion Mode ⚫ ESD improved Capability ⚫ VDS= 600V,ID= 0.03A RDS(on)< 800Ω @VGS= 10V 1. Gate 2.Source 3.Drain Marking Code:F501D Schematic Diagram 3.Drain 1.Gate 2.Source Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 0.03 A Drain Current-Pulsed IDM 0.12 A Maximum Power Dissipation PD 0.5 W VESD(G-S) 300 V TJ 150 °C TSTG -55 to +150 °C RθJA 250 ℃/W Gate Source ESD (HBM-C=100pF, R=1.5kΩ) Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance,Junction-to-Ambient www.pingjingsemi.com Revision：2.0 Jul-2021 1/7 PJM60H12MNSA N- Channel Depletion Mode MOSFETS Electrical Characteristics (Ta=25℃ unless otherwise specified) Parameter Symbol Test Condition Min. Typ. Max. Unit V(BR)DSS VGS=-5V,ID=250μA 600 -- -- V VDS=600V, VGS=-5V -- -- 0.1 μA -- -- 10 μA OFF Characteristics Drain-Source Breakdown Voltage Gate-Body Leakage Current ID(off) VDS=480V, VGS=-5V, TA=125°C Gate Leakage Current IGSS VGS=±10V -- -- ±100 nA VGS(off) VDS=3V,ID=8μA -2.7 -1.8 -1 V IDSS VGS=0V, VDS=25V 12 -- -- mA VGS=0V, ID=3mA -- 350 700 Ω VGS=10V, ID=16mA -- 400 800 Ω VDS=50V,ID=0.01A 8 17 -- mS -- 50 -- pF -- 4.53 -- pF ON Characteristics Gate-to-Source Cut-off Voltage On-State Drain Current Drain-Source On-Resistance RDS(on) Dynamic Characteristics Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss -- 1.08 -- pF Turn-on Delay Time td(on) -- 9.9 -- nS Turn-on Rise Time tr VDD=300V, ID=0.01A -- 55.8 -- nS Turn-off Delay Time td(off) VGS=-5V~7V,RG=6Ω -- 56.4 -- nS -- 136 -- nS -- 1.14 -- nC -- 0.5 -- nC -- 0.37 -- nC -- -- 1.2 V -- -- 0.025 A -- 0.75 1.2 V VDS=25V,VGS=-5V,f=1MHz Switching Characteristics Turn-off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDD=400V,ID=0.01A, VGS=-5V~5V Drain-Source Diode Characteristics Diode Forward Voltage VSD Diode Forward Current IS VGS=-5V,IF=16mA Gate-Source Zener Diode Gate-Source Breakdown Voltage www.pingjingsemi.com Revision：2.0 Jul-2021 VGSO IGS=±1mA (Open Drain) 2/7 PJM60H12MNSA N- Channel Depletion Mode MOSFETS Typical Characteristic Curves 1.15 Normalized Breakdown Voltage Normalized On-Resistance 2.25 2.00 1.75 1.30 1.25 1.00 0.75 0.50 -75 1.10 1.05 1.00 0.95 0.90 -50 -25 -0 25 50 75 100 125 150 -75 -50 -25 TJ Junction Temperature (℃) 0 25 50 75 100 125 150 TJ Junction Temperature (℃) C Capacitance (pF) Ciss Coss Crss VGS=-5V, f=1MHz Ciss=Cgs+Cgd Coss=Cds=Cgd Crss=Cgd VGS Gate-Source Voltage (V) +5 VDS=100V VDS=250V +3 VDS=400V +1 -1 -3 -5 VDS Drain-Source Voltage (V) 0 0.2 0.4 0.6 0.8 1.0 1.2 Qg Total Gate Charge (nC) 0.025 1ms 10ms 100ms DC Operation in This Area May be Limited by RDS(on) TJ=Max Rated TC=25℃ 0.020 ID Drain Current (A) ID Drain Current (A) 100μs 0.015 0.010 0.005 0.000 VDS Drain-Source Voltage (V) www.pingjingsemi.com Revision：2.0 Jul-2021 0 3 6 9 12 15 VDS Drain-Source Voltage (V) 3/7 PJM60H12MNSA N- Channel Depletion Mode MOSFETS IDM Peak Drain Current (A) 100 For Temperatures Above 25℃ Derate Peak Current as Follows Transconductance may Limited in This Region 10 1 1.00E-05 1.00E-03 1.00E-04 1.00E-02 1.00E+01 1.00E+00 1.00E-01 t Pulse Width (s) 6 9 ID Drain Current (A) 7.5 RDS(on) On-Resistance (Ω) Pulse Duration=10μs Duty Factor=0.5%Max VDS=30V 6 4.5 -55℃ 3 +25℃ 1.5 0 150℃ 2 3 4 5 5 4 ID=4A ID=2A 3 ID=1A 2 1 0 6 Pulse Duration=10μs Duty Factor=0.5%Max TC=25℃ 4 VGS Gate-Source Voltage (V) 10 12 14 2.50 Pulse Duration=10μs Duty Factor=0.5%Max TC=25℃ Normalized Breakdown Voltage RDS(on) On-Resistance (Ω) 8 VGS Gate-Source Voltage (V) 3 2.5 2 VGS=20V 1.5 1 6 0 www.pingjingsemi.com Revision：2.0 Jul-2021 1 2 3 ID Drain Current (A) 4 2.25 2.00 Pulse Duration=10μs Duty Factor=0.5%Max VGS=10V, ID=2A 1.75 1.50 1.25 1.00 0.75 0.5 -50 0 50 100 150 TJ Junction Temperature (℃) 4/7 PJM60H12MNSA N- Channel Depletion Mode MOSFETS Package Outline SOT-23 Dimensions in mm Ordering Information Device Package Shipping PJM60H12MNSA SOT-23 3,000PCS/Reel&7inches www.pingjingsemi.com Revision：2.0 Jul-2021 5/7 PJM60H12MNSA N- Channel Depletion Mode MOSFETS Conditions of Soldering and Storage  Recommended condition of reflow soldering Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 OC  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 OC  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revision：2.0 Jul-2021 6/7 PJM60H12MNSA N- Channel Depletion Mode MOSFETS Package Specifications  The method of packaging Cover Tape 3,000 pcs per reel SOT-23 Carrier Tape 30,000 pcs per box 10 reels per box 120,000 pcs per carton 4 boxes per carton  Embossed tape and reel data D A T2 T1 Symbol A B C E F D T1 T2 B C E Value (unit: mm) Ø 177.8±1 2.7±0.2 Ø 13.5±0.2 Ø 54.5±0.2 12.3±0.3 9.6+2/-0.3 1.0±0.2 1.2±0.2 F Reel (7'') www.pingjingsemi.com Revision：2.0 Jul-2021 7/7