PJM3018NSA

PJM3018NSA N-Channel Enhancement Mode Power MOSFET SOT-23 Features ⚫ Low RDS(ON) ⚫ Surface Mount Package ⚫ ESD protected(HBM) up to 2KV ⚫ VDS= 30V,ID= 0.5A RDS(on)< 3Ω @VGS= 10V 1. Gate 2.Source 3.Drain Marking Code:3018K Applications Schematic Diagram 3.Drain ⚫ Switching Application 1.Gate 2.Source Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 0.5 A Maximum Power Dissipation PD 0.35 W Junction Temperature TJ 150 °C TSTG -55 to +150 °C RθJA 357 °C/W Storage Temperature Range Thermal Characteristics Thermal Resistance,Junction-to-Ambient Note1 www.pingjingsemi.com Revision：2.0 Aug-2021 1/6 PJM3018NSA N-Channel Enhancement Mode Power MOSFET Electrical Characteristics (Ta=25℃ unless otherwise specified) Parameter Symbol Test Condition Min. Typ. Max. Unit Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250μA 30 -- -- V Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V -- -- 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V -- -- ±10 μA Gate Threshold Voltage Note2 VGS(th) VDS=VGS,ID=250μA 0.8 -- 2.5 V Drain-Source On-Resistance Note2 RDS(on) VGS=10V,ID=0.3A -- 2 3 Ω VGS=4.5V,ID=0.2A -- 2.5 4 Ω VDS=3V,ID=10mA 20 -- -- mS -- 13 -- pF -- 9 -- pF Static Characteristics Forward Transconductance Note2 gFS Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss -- 4 -- pF Turn-on Delay Time td(on) -- 13 -- nS Turn-on Rise Time tr VDD=5V,RL=500Ω,ID=10mA -- 35 -- nS Turn-off Delay Time td(off) VGS=5V,RGEN=10Ω -- 80 -- nS -- 80 -- nS -- -- 1.2 V -- -- 0.5 A VDS=5V,VGS=0V,f=1MHz Switching Characteristics Turn-off Fall Time tf Source-Drain Diode Characteristics Diode Forward Voltage Note2 VSD Diode Forward Current Note1 IS VGS=0V,IS=0.5A Note: 1. Surface Mounted on FR4 Board, t ≤ 10 sec. 2. Pulse Test: Pulse width≤300μs, duty cycle≤2%. www.pingjingsemi.com Revision：2.0 Aug-2021 2/6 PJM3018NSA N-Channel Enhancement Mode Power MOSFET Typical Characteristic Curves www.pingjingsemi.com Revision：2.0 Aug-2021 3/6 PJM3018NSA N-Channel Enhancement Mode Power MOSFET Package Outline SOT-23 Dimensions in mm Ordering Information Device Package Shipping PJM3018NSA SOT-23 3,000PCS/Reel&7inches www.pingjingsemi.com Revision：2.0 Aug-2021 4/6 PJM3018NSA N-Channel Enhancement Mode Power MOSFET Conditions of Soldering and Storage  Recommended condition of reflow soldering Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 OC  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 OC  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revision：2.0 Aug-2021 5/6 PJM3018NSA N-Channel Enhancement Mode Power MOSFET Package Specifications  The method of packaging Cover Tape 3,000 pcs per reel SOT-23 Carrier Tape 30,000 pcs per box 10 reels per box 120,000 pcs per carton 4 boxes per carton  Embossed tape and reel data D A T2 T1 Symbol A B C E F D T1 T2 B C E Value (unit: mm) Ø 177.8±1 2.7±0.2 Ø 13.5±0.2 Ø 54.5±0.2 12.3±0.3 9.6+2/-0.3 1.0±0.2 1.2±0.2 F Reel (7'') www.pingjingsemi.com Revision：2.0 Aug-2021 6/6