PJM2305PSA

PJM2305PSA P-Channel Enhancement Mode Power MOSFET SOT-23 Features ⚫ Low gate chargre ⚫ High density cell design for ultra low RDS(on) ⚫ VDS= -20V,ID= -4.1A RDS(on)< 45mΩ @VGS= -4.5V 1. Gate 2.Source 3.Drain Marking Code:S5 Applications Schematic Diagram ⚫ PWM applications 3.Drain ⚫ Load switch ⚫ Power management 1.Gate 2.Source Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Drain-Source Voltage -VDS 20 V Gate-Source Voltage VGS ±12 V Drain Current-Continuous -ID 4.1 A Maximum Power Dissipation PD 0.9 W Junction Temperature TJ 150 °C TSTG -55 to +150 °C RθJA 139 °C/W Storage Temperature Range Thermal Characteristics Thermal Resistance,Junction-to-Ambient Note1 www.pingjingsemi.com Revision：2.0 Jul-2021 1/7 PJM2305PSA P-Channel Enhancement Mode Power MOSFET Electrical Characteristics (Ta=25℃ unless otherwise specified) Parameter Symbol Test Condition Min. Typ. Max. Unit Drain-Source Breakdown Voltage -V(BR)DSS VGS=0V,ID=-250μA 20 -- -- V Zero Gate Voltage Drain Current -IDSS VDS=-20V,VGS=0V -- -- 1 μA Gate-Body Leakage Current IGSS VGS=±12V,VDS=0V -- -- ±100 nA Gate Threshold Voltage Note3 -VGS(th) VDS=VGS,ID=-250μA 0.5 0.7 0.9 V Drain-Source On-Resistance Note3 RDS(on) VGS=-4.5V,ID=-4.1A -- 38 45 mΩ VGS=-2.5V,ID=-3A -- 45 70 mΩ VDS=-5V,ID=-4.1A -- 6 -- S -- 740 -- pF -- 290 -- pF Static Characteristics Forward Transconductance Note3 gFS Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss -- 190 -- pF Turn-on Delay Time td(on) -- 12 -- nS Turn-on Rise Time tr VDD=-4V,RL=1.2Ω -- 35 -- nS Turn-off Delay Time td(off) VGS=-4.5V,RGEN=1Ω -- 30 -- nS -- 10 -- nS -- 7.8 -- nC -- 1.2 -- nC -- 1.6 -- nC -- -- 1.2 V -- -- 4.1 A VDS=-4V,VGS=0V,f=1MHz Switching Characteristics Turn-off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=-4V,ID=-4.1A, VGS=-4.5V Source-Drain Diode Characteristics Diode Forward Voltage Note3 -VSD Diode Forward Current Note2 -IS VGS=0V,IS=-4.1A Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse width≤300μs, duty cycle≤2%. www.pingjingsemi.com Revision：2.0 Jul-2021 2/7 PJM2305PSA P-Channel Enhancement Mode Power MOSFET -ID Drain Current (A) RDS(on) On-Resistance (Ω) Typical Characteristic Curves -ID Drain Current (A) -ID Drain Current (A) Normalized On-Resistance -VDS Drain-Source Voltage (V) TJ Junction Temperature (℃) -VGS Gate-Source Voltage (V) TJ=125℃ C Capacitance (pF) RDS(on) On-Resistance (Ω) ID=3.5A TJ=25℃ -VGS Gate-Source Voltage (V) www.pingjingsemi.com Revision：2.0 Jul-2021 -VDS Drain-Source Voltage (V) 3/7 -IS Reverse Drain Current (A) -VGS Gate-Source Voltage (V) PJM2305PSA P-Channel Enhancement Mode Power MOSFET TJ=150℃ TJ=25℃ TJ=-55℃ -VSD Source-Drain Voltage (V) -ID Drain Current (A) PD Power Dissipation (W) Qg Gate Charge (nC) VGS=0V r(t),Normalized Effective Transient Thermal Impedance -VDS Drain-Source Voltage (V) TA Ambient Temperature (℃) Single Pulsed Thermal Response Square Wave Pluse Duration (sec) www.pingjingsemi.com Revision：2.0 Jul-2021 4/7 PJM2305PSA P-Channel Enhancement Mode Power MOSFET Package Outline SOT-23 Dimensions in mm Ordering Information Device Package Shipping PJM2305PSA SOT-23 3,000PCS/Reel&7inches www.pingjingsemi.com Revision：2.0 Jul-2021 5/7 PJM2305PSA P-Channel Enhancement Mode Power MOSFET Conditions of Soldering and Storage  Recommended condition of reflow soldering Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 OC  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 OC  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revision：2.0 Jul-2021 6/7 PJM2305PSA P-Channel Enhancement Mode Power MOSFET Package Specifications  The method of packaging Cover Tape 3,000 pcs per reel SOT-23 Carrier Tape 30,000 pcs per box 10 reels per box 120,000 pcs per carton 4 boxes per carton  Embossed tape and reel data D A T2 T1 Symbol A B C E F D T1 T2 B C E Value (unit: mm) Ø 177.8±1 2.7±0.2 Ø 13.5±0.2 Ø 54.5±0.2 12.3±0.3 9.6+2/-0.3 1.0±0.2 1.2±0.2 F Reel (7'') www.pingjingsemi.com Revision：2.0 Jul-2021 7/7