PJM3400NSA

PJM3400NSA N-Channel Enhancement Mode Power MOSFET SOT-23 Features ⚫ High power and current handing capability ⚫ VDS= 30V,ID= 5.8A RDS(on)< 28mΩ @VGS= 10V 1. Gate 2.Source 3.Drain Marking Code:R0 Applications Schematic Diagram 3.Drain ⚫ PWM applications ⚫ Load switch ⚫ Power management 1.Gate 2.Source Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±12 V Drain Current-Continuous ID 5.8 A Drain Current-Pulsed Note1 IDM 30 A Maximum Power Dissipation PD 1.2 W Junction Temperature TJ 150 ℃ TSTG -55 to +150 ℃ RθJA 104 °C/W Storage Temperature Range Thermal Characteristics Thermal Resistance,Junction-to-Ambient Note2 www.pingjingsemi.com Revision：3.0 Nov-2022 1/7 PJM3400NSA N-Channel Enhancement Mode Power MOSFET Electrical Characteristics (Ta=25℃ unless otherwise specified) Parameter Symbol Test Condition Min. Typ. Max. Unit Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250μA 30 -- -- V Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V -- -- 1 μA Gate-Body Leakage Current IGSS VGS=±12V,VDS=0V -- -- ±100 nA Gate Threshold Voltage Note3 VGS(th) VDS=VGS,ID=250μA 0.7 0.9 1.4 V Drain-source on-resistance Note3 RDS(on) VGS=10V, ID=5.8A -- 22 28 mΩ VGS=4.5V, ID=5A -- 25 35 mΩ Forward Transconductance Note3 gFS VDS=5V,ID=1A -- 5.5 -- S -- 702 -- pF -- 66 -- pF Static Characteristics Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss -- 52 -- pF Turn-on Delay Time td(on) -- 3.3 -- nS Turn-on Rise Time tr VDD=15V,RL=2.7Ω -- 4.8 -- nS Turn-off Delay Time td(off) VGS=10V,RGEN=3Ω -- 26 -- nS VDS=15V,VGS=0V,f=1MHz Switching Characteristics Turn-off Fall Time tf -- 4 -- nS Total Gate Charge Qg -- 9.5 -- nC Gate-Source Charge Qgs -- 1.5 -- nC Gate-Drain Charge Qgd -- 3 -- nC -- -- 1.2 V -- -- 5.8 A VDS=15V,ID=5.8A, VGS=4.5V Source-Drain Diode Characteristics Diode Forward Voltage Note3 VSD Diode Forward Current Note2 IS VGS=0V,IS=5.8A Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse width≤300μs, duty cycle≤2%. www.pingjingsemi.com Revision：3.0 Nov-2022 2/7 PJM3400NSA N-Channel Enhancement Mode Power MOSFET ID Drain Current (A) RDS(on) On-Resistance(mΩ) Typical Characteristic Curves ID Drain Current (A) ID Drain Current (A) Normalized On-Resistance VDS Drain-Source Voltage (V) TJ Junction Temperature(℃) C Capacitance (pF) RDS(on) On-Resistance (mΩ) VGS Gate-Source Voltage (V) VGS Gate-Source Voltage (V) www.pingjingsemi.com Revision：3.0 Nov-2022 VDS Drain-Source Voltage (V) 3/7 IS Reverse Drain Current (A) VGS Gate-Source Voltage (V) PJM3400NSA N-Channel Enhancement Mode Power MOSFET Qg Gate Charge (nC) VDS Drain-Source Voltage (V) ID Drain Current (A) 100 10 TJ(Max)=150℃ TA=25℃ RDS(on) Limited 100μs 1ms 0.1s 1 1s 10s 0.1 0.01 0.1 10ms 1 DC 10 100 r(t),Normalized Effective Transient Thermal Impedance VDS Drain-Source Voltage (V) Square Wave Pluse Duration (sec) www.pingjingsemi.com Revision：3.0 Nov-2022 4/7 PJM3400NSA N-Channel Enhancement Mode Power MOSFET Package Outline SOT-23 Dimensions in mm Ordering Information Device Package Shipping PJM3400NSA SOT-23 3,000PCS/Reel&7inches www.pingjingsemi.com Revision：3.0 Nov-2022 5/7 PJM3400NSA N-Channel Enhancement Mode Power MOSFET Conditions of Soldering and Storage  Recommended condition of reflow soldering Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 OC  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 OC  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revision：3.0 Nov-2022 6/7 PJM3400NSA N-Channel Enhancement Mode Power MOSFET Package Specifications  The method of packaging Cover Tape 3,000 pcs per reel SOT-23 Carrier Tape 30,000 pcs per box 10 reels per box 120,000 pcs per carton 4 boxes per carton  Embossed tape and reel data D A T2 T1 Symbol A B C E F D T1 T2 B C E Value (unit: mm) Ø 177.8±1 2.7±0.2 Ø 13.5±0.2 Ø 54.5±0.2 12.3±0.3 9.6+2/-0.3 1.0±0.2 1.2±0.2 F Reel (7'') www.pingjingsemi.com Revision：3.0 Nov-2022 7/7