PJM3415PSA
P-Channel Enhancement Mode Power MOSFET
SOT-23
Features
⚫ Low gate chargre
⚫ High density cell design for ultra low RDS(on)
⚫ ESD protected(HBM) up to 2KV
⚫ VDS= -20V,ID= -4A
RDS(on)< 50mΩ @VGS= -4.5V
1. Gate
2.Source
3.Drain
Marking Code:3415K
Applications
Schematic Diagram
3.Drain
⚫ PWM applications
⚫ Load switch
⚫ Power management
1.Gate
2.Source
Absolute Maximum Ratings
Ratings at 25℃ ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Drain-Source Voltage
-VDS
20
V
Gate-Source Voltage
VGS
±8
V
Drain Current-Continuous
-ID
4
A
Maximum Power Dissipation
PD
0.9
W
Junction Temperature
TJ
150
°C
TSTG
-55 to +150
°C
RθJA
139
°C/W
Storage Temperature Range
Thermal Characteristics
Thermal Resistance,Junction-to-Ambient Note1
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Revision:2.0 Jul-2021
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PJM3415PSA
P-Channel Enhancement Mode Power MOSFET
Electrical Characteristics
(Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
-V(BR)DSS
VGS=0V,ID=-250μA
20
--
--
V
Zero Gate Voltage Drain Current
-IDSS
VDS=-20V,VGS=0V
--
--
1
μA
Gate-Body Leakage Current
IGSS
VGS=±8V,VDS=0V
--
--
±10
μA
Gate Threshold Voltage Note2
-VGS(th)
VDS=VGS,ID=-250μA
0.3
0.65
1
V
Drain-Source On-Resistance Note2
RDS(on)
VGS=-4.5V,ID=-4A
--
33
50
mΩ
VGS=-2.5V,ID=-4A
--
42
60
mΩ
Forward Transconductance Note2
gFS
VDS=-5V,ID=-4A
8
--
--
S
--
1181.1
--
pF
--
121.3
--
pF
Static Characteristics
Dynamic Characteristics
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
--
114.8
--
pF
Turn-on Delay Time
td(on)
--
12
--
nS
Turn-on Rise Time
tr
VDD=-10V,RL=2. 5Ω,
--
10
--
nS
Turn-off Delay Time
td(off)
VGS=-4.5V,RG=3Ω
--
19
--
nS
--
25
--
nS
--
10.2
--
nC
--
1.3
--
nC
--
2.4
--
nC
--
--
1.2
V
--
--
4
A
VDS=-10V,VGS=0V,f=1MHz
Switching Characteristics
Turn-off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS=-10V,
ID= -4A,VGS=-4.5V
Source-Drain Diode Characteristics
Diode Forward Voltage Note2
-VSD
Diode Forward Current Note1
-IS
VGS=0V,IS=-4A
Note: 1. Surface Mounted on FR4 Board, t ≤ 10 sec.
2. Pulse Test: Pulse width≤300μs, duty cycle≤2%.
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Revision:2.0 Jul-2021
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PJM3415PSA
P-Channel Enhancement Mode Power MOSFET
-ID Drain Current (A)
RDS(on) On-Resistance (mΩ)
Typical Characteristic Curves
50
40
30
20
10
2
0
-VDS Drain-Source Voltage (V)
4
6
8
10
-ID Drain Current (A)
Normalized On-Resistance
-ID Drain Current (A)
TJ Junction Temperature (℃)
RDS(on) On-Resistance (mΩ)
-VGS Gate-Source Voltage (V)
C Capacitance (pF)
Ciss
CRss
CUss
-VGS Gate-Source Voltage (V)
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Revision:2.0 Jul-2021
-VDS Drain-Source Voltage (V)
3/7
-IS Reverse Drain Current (A)
-VGS Gate-Source Voltage (V)
PJM3415PSA
P-Channel Enhancement Mode Power MOSFET
Qg Gate Charge (nC)
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Revision:2.0 Jul-2021
-VSD Source-Drain Voltage (V)
4/7
PJM3415PSA
P-Channel Enhancement Mode Power MOSFET
Package Outline
SOT-23
Dimensions in mm
Ordering Information
Device
Package
Shipping
PJM3415PSA
SOT-23
3,000PCS/Reel&7inches
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Revision:2.0 Jul-2021
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PJM3415PSA
P-Channel Enhancement Mode Power MOSFET
Conditions of Soldering and Storage
Recommended condition of reflow soldering
Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust
the following parameters:
Time length of peak temperature (longer)
Time length of soldering (longer)
Thickness of solder paste (thicker)
Conditions of hand soldering
Temperature: 370 OC
Time: 3s max.
Times: one time
Storage conditions
Temperature
5 to 40 OC
Humidity
30 to 80% RH
Recommended period
One year after manufacturing
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Revision:2.0 Jul-2021
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PJM3415PSA
P-Channel Enhancement Mode Power MOSFET
Package Specifications
The method of packaging
Cover Tape
3,000 pcs per reel
SOT-23
Carrier Tape
30,000 pcs per box
10 reels per box
120,000 pcs per carton
4 boxes per carton
Embossed tape and reel data
D
A
T2
T1
Symbol
A
B
C
E
F
D
T1
T2
B
C
E
Value (unit: mm)
Ø 177.8±1
2.7±0.2
Ø 13.5±0.2
Ø 54.5±0.2
12.3±0.3
9.6+2/-0.3
1.0±0.2
1.2±0.2
F
Reel (7'')
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