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PJM3415PSA

PJM3415PSA

  • 厂商:

    PJ(平晶)

  • 封装:

    SOT-23

  • 描述:

    MOSFETs P-Channel 20V 4A 50mΩ@4.5V

  • 数据手册
  • 价格&库存
PJM3415PSA 数据手册
PJM3415PSA P-Channel Enhancement Mode Power MOSFET SOT-23 Features ⚫ Low gate chargre ⚫ High density cell design for ultra low RDS(on) ⚫ ESD protected(HBM) up to 2KV ⚫ VDS= -20V,ID= -4A RDS(on)< 50mΩ @VGS= -4.5V 1. Gate 2.Source 3.Drain Marking Code:3415K Applications Schematic Diagram 3.Drain ⚫ PWM applications ⚫ Load switch ⚫ Power management 1.Gate 2.Source Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Drain-Source Voltage -VDS 20 V Gate-Source Voltage VGS ±8 V Drain Current-Continuous -ID 4 A Maximum Power Dissipation PD 0.9 W Junction Temperature TJ 150 °C TSTG -55 to +150 °C RθJA 139 °C/W Storage Temperature Range Thermal Characteristics Thermal Resistance,Junction-to-Ambient Note1 www.pingjingsemi.com Revision:2.0 Jul-2021 1/7 PJM3415PSA P-Channel Enhancement Mode Power MOSFET Electrical Characteristics (Ta=25℃ unless otherwise specified) Parameter Symbol Test Condition Min. Typ. Max. Unit Drain-Source Breakdown Voltage -V(BR)DSS VGS=0V,ID=-250μA 20 -- -- V Zero Gate Voltage Drain Current -IDSS VDS=-20V,VGS=0V -- -- 1 μA Gate-Body Leakage Current IGSS VGS=±8V,VDS=0V -- -- ±10 μA Gate Threshold Voltage Note2 -VGS(th) VDS=VGS,ID=-250μA 0.3 0.65 1 V Drain-Source On-Resistance Note2 RDS(on) VGS=-4.5V,ID=-4A -- 33 50 mΩ VGS=-2.5V,ID=-4A -- 42 60 mΩ Forward Transconductance Note2 gFS VDS=-5V,ID=-4A 8 -- -- S -- 1181.1 -- pF -- 121.3 -- pF Static Characteristics Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss -- 114.8 -- pF Turn-on Delay Time td(on) -- 12 -- nS Turn-on Rise Time tr VDD=-10V,RL=2. 5Ω, -- 10 -- nS Turn-off Delay Time td(off) VGS=-4.5V,RG=3Ω -- 19 -- nS -- 25 -- nS -- 10.2 -- nC -- 1.3 -- nC -- 2.4 -- nC -- -- 1.2 V -- -- 4 A VDS=-10V,VGS=0V,f=1MHz Switching Characteristics Turn-off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=-10V, ID= -4A,VGS=-4.5V Source-Drain Diode Characteristics Diode Forward Voltage Note2 -VSD Diode Forward Current Note1 -IS VGS=0V,IS=-4A Note: 1. Surface Mounted on FR4 Board, t ≤ 10 sec. 2. Pulse Test: Pulse width≤300μs, duty cycle≤2%. www.pingjingsemi.com Revision:2.0 Jul-2021 2/7 PJM3415PSA P-Channel Enhancement Mode Power MOSFET -ID Drain Current (A) RDS(on) On-Resistance (mΩ) Typical Characteristic Curves 50 40 30 20 10 2 0 -VDS Drain-Source Voltage (V) 4 6 8 10 -ID Drain Current (A) Normalized On-Resistance -ID Drain Current (A) TJ Junction Temperature (℃) RDS(on) On-Resistance (mΩ) -VGS Gate-Source Voltage (V) C Capacitance (pF) Ciss CRss CUss -VGS Gate-Source Voltage (V) www.pingjingsemi.com Revision:2.0 Jul-2021 -VDS Drain-Source Voltage (V) 3/7 -IS Reverse Drain Current (A) -VGS Gate-Source Voltage (V) PJM3415PSA P-Channel Enhancement Mode Power MOSFET Qg Gate Charge (nC) www.pingjingsemi.com Revision:2.0 Jul-2021 -VSD Source-Drain Voltage (V) 4/7 PJM3415PSA P-Channel Enhancement Mode Power MOSFET Package Outline SOT-23 Dimensions in mm Ordering Information Device Package Shipping PJM3415PSA SOT-23 3,000PCS/Reel&7inches www.pingjingsemi.com Revision:2.0 Jul-2021 5/7 PJM3415PSA P-Channel Enhancement Mode Power MOSFET Conditions of Soldering and Storage  Recommended condition of reflow soldering Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 OC  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 OC  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revision:2.0 Jul-2021 6/7 PJM3415PSA P-Channel Enhancement Mode Power MOSFET Package Specifications  The method of packaging Cover Tape 3,000 pcs per reel SOT-23 Carrier Tape 30,000 pcs per box 10 reels per box 120,000 pcs per carton 4 boxes per carton  Embossed tape and reel data D A T2 T1 Symbol A B C E F D T1 T2 B C E Value (unit: mm) Ø 177.8±1 2.7±0.2 Ø 13.5±0.2 Ø 54.5±0.2 12.3±0.3 9.6+2/-0.3 1.0±0.2 1.2±0.2 F Reel (7'') www.pingjingsemi.com Revision:2.0 Jul-2021 7/7
PJM3415PSA 价格&库存

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PJM3415PSA
    •  国内价格
    • 10+0.27594
    • 100+0.22551
    • 300+0.20024

    库存:2685

    PJM3415PSA
      •  国内价格
      • 5+0.25718
      • 20+0.23408
      • 100+0.21098
      • 500+0.18788
      • 1000+0.17710
      • 2000+0.16940

      库存:2660