FMMT491

FMMT491 NPN Transistor SOT-23 Features  For Switching and AF Amplifier Applications. Equivalent Circuit 1.Base 2.Emitter 3.Collector 3.Collector Marking Code : 491 1.Base 2.. Emitter Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage VCBO 80 V Collector Emitter Voltage VCEO 60 V Emitter Base Voltage VEBO 5 V Collector Current IC 1 A Peak Collector Current ICM 2 A Maximum Power Dissipation PD 500 mW Junction Temperature TJ 150 ℃ TSTG -55 to +150 ℃ Storage Temperature Range www.pingjingsemi.com Revision：2.0 Mar-2021 1/6 FMMT491 NPN Transistor Electrical Characteristics (TA=25℃) Parameter Symbol Min. Max. Unit 100 -- 100 300 at VCE = 5 V, IC = 1 A 80 -- at VCE = 5 V, IC = 2 A 30 -- ICBO -- 100 nA IEBO -- 100 nA V(BR)CBO 80 -- V V(BR)CEO 60 -- V V(BR)EBO 5 -- V VCE(sat) -- 250 mV -- 500 VBE(sat) -- 1.1 V VBE(on) -- 1 V FT 150 -- MHz Cob -- 10 pF DC Current Gain Note1 at VCE = 5 V, IC = 1 mA at VCE = 5 V, IC = 500 mA HFE Collector Base Cutoff Current at VCB = 60V Emitter Base Cutoff Current at VEB = 5.6 V Collector Base Breakdown Voltage at IC = 100 μA Collector Emitter Breakdown Voltage at IC = 10 mA Emitter Base Breakdown Voltage at IE = 100 μA -- Collector Emitter Saturation Voltage Note1 at IC = 500 mA, IB = 50 mA at IC = 1 A, IB = 100 mA Base Emitter Saturation Voltage Note1 at IC = 1 A, IB = 100 mA Base Emitter On Voltage Note1 at VCE = 5 V, IC = 1 A Transition Frequency at VCE = 10 V, IC = 50 mA,f = 100 MHz Output Capacitance at VCB = 10 V, f = 1 MHz Note1: Measured under pulsed conditions, Pulse width≤300uS, Duty cycle≤2%. www.pingjingsemi.com Revision：2.0 Mar-2021 2/6 FMMT491 NPN Transistor Typical Characteristic Curves 400 1000 Common Emitter Ta=25℃ 2mA o Ta=100 C hFE 1.6mA 1.4mA 1.2mA DC Current Gain Collector Current IC (mA) 1.8mA 300 200 1mA 0.8mA 100 Ta=25℃ 100 0.6mA 0.4mA 0 Common Emitter VCE=5V IB=0.2mA 0 8 6 4 2 Collector-Emitter Voltage 10 10 1 10 1000 100 Collector Current VCE (V) IC 2000 (mA) 1200 1000 1000 Base-Emitter Saturation Voltage VBEsat (mV) Collector-Emitter Saturation Voltage VCEsat (mV) β=10 100 Ta=100℃ Ta=25℃ 800 Ta=25℃ 600 Ta=100℃ 400 β=10 10 1 100 10 Collector Current IC 200 1000 1 100 10 (mA) Collector Current 1000 IC 1000 Common Emitter VCE=5V f=1MHz IE=0/ IC=0 o Ta=25 C Cib 100 Ta=100℃ Capacitance C (pF) Collector Current IC (mA) 1000 (mA) Ta=25℃ 10 1 200 600 400 Base-Emitter Voltage 800 VBE 100 Cob 10 1 0.1 1000 10 1 Reverse Voltage (mV) VR 20 (V) 600 500 PD (mW) Power Dissipation 100 Transition Frequency fT (MHz) 500 Common Emitter VCE=5V 400 300 200 100 o Ta=25 C 10 3 Collector Current www.pingjingsemi.com Revision：2.0 Mar-2021 60 10 IC (mA) 0 0 25 50 75 Ambient Temperature 100 125 150 Ta (℃) 3/6 FMMT491 NPN Transistor Package Outline SOT-23 Dimensions in mm Ordering Information Device Package Shipping FMMT491 SOT-23 3,000PCS/Reel&7inches www.pingjingsemi.com Revision：2.0 Mar-2021 4/6 FMMT491 NPN Transistor Conditions of Soldering and Storage  Recommended condition of reflow soldering Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 OC  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 OC  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revision：2.0 Mar-2021 5/6 FMMT491 NPN Transistor Package Specifications  The method of packaging Cover Tape 3,000 pcs per reel SOT-23 Carrier Tape 30,000 pcs per box 10 reels per box 120,000 pcs per carton 4 boxes per carton  Embossed tape and reel data D A T2 T1 Symbol A B C E F D T1 T2 B C E Value (unit: mm) Ø 177.8±1 2.7±0.2 Ø 13.5±0.2 Ø 54.5±0.2 12.3±0.3 9.6+2/-0.3 1.0±0.2 1.2±0.2 F Reel (7'') www.pingjingsemi.com Revision：2.0 Mar-2021 6/6