4953

Plastic-Encapsulate Mosfets P-Channel Enhancement Mode Power MOSFET 4953 Description The 4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -30V,ID = -5.1A RDS(ON) < 105mΩ @ VGS=-4.5V RDS(ON) < 55mΩ @ VGS=-10V SOP-8 top view ● High Power and current handing capability D1 ● Lead free product is acquired D2 ● Surface Mount Package G1 G2 Application S1 ● PWM applications S2 Schematic diagram ● Load switch pin assignment ● Power management Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID -4.9 A Drain IDM -20 A PD 2 W TJ,TSTG -55 To 150 ℃ RθJA 50 ℃/W Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -30 -33 Zero Gate Voltage Drain Current IDSS VDS=-24V,VGS=0V Max Unit Off Characteristics GUANGDONG HOTTECH INDUSTRIAL CO., LTD V -1 μA Page:P5 -P1 Plastic-Encapsulate Mosfets 4953 Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA Drain-Source On-State Resistance RDS(ON) On Characteristics ±100 nA -1.6 -3 V VGS=-10V, ID=-5.1A 48 55 mΩ VGS=-4.5V, ID=-4.2A 73 105 mΩ (Note 3) Forward Transconductance Dynamic Characteristics gFS VDS=-15V,ID=-4.5A -1 4 7 S 520 PF 130 PF 70 PF 7 nS (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Switching Characteristics VDS=-15V,VGS=0V, F=1.0MHz Crss (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=-15V, ID=-1A, 13 nS td(off) VGS=-10V,RGEN=6Ω 14 nS Turn-Off Delay Time Turn-Off Fall Time tf 9 nS Total Gate Charge Qg 12 nC Gate-Source Charge Qgs 2.2 nC Gate-Drain Charge Qgd 3 nC VDS=-15V,ID=-5.1A,VGS=-10V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD VGS=0V,IS=-1.7A -1.2 V Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P5 -P2 Plastic-Encapsulate Mosfets 4953 Typical Electrical and Thermal Characteristics ton tr td(on) toff tf td(off) 90% VOUT 90% INVERTED 10% 10% 90% VIN 50% 50% 10% PULSE WIDTH Figure 1:Switching Test Circuit PD Power(W) ID- Drain Current (A） Figure 2:Switching Waveforms TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure 4 Drain Current ID- Drain Current (A) Rdson On-Resistance(mΩ) Figure 3 Power Dissipation Vds Drain-Source Voltage (V) Figure 5 Output Characteristics GUANGDONG HOTTECH ID- Drain Current (A) Figure 6 Drain-Source On-Resistance INDUSTRIAL CO., LTD Page:P5 -P3 Plastic-Encapsulate Mosfets ID- Drain Current (A) Normalized On-Resistance 4953 TJ-Junction Temperature(℃) Vgs Gate-Source Voltage (V) Figure 8 Drain-Source On-Resistance C Capacitance (pF) Rdson On-Resistance(mΩ) Figure 7 Transfer Characteristics Vgs Gate-Source Voltage (V) Vds Drain-Source Voltage (V) Figure 10 Capacitance vs Vds Vgs Gate-Source Voltage (V) Is- Reverse Drain Current (A) Figure 9 Rdson vs Vgs Qg Gate Charge (nC) Figure 11 Gate Charge GUANGDONG HOTTECH Vsd Source-Drain Voltage (V) Figure 12 Source- Drain Diode Forward INDUSTRIAL CO., LTD Page:P5 -P4 Plastic-Encapsulate Mosfets ID- Drain Current (A) 4953 Vds Drain-Source Voltage (V) r(t),Normalized Effective Transient Thermal Impedance Figure 13 Safe Operation Area Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P5 -P5