9435

Plastic-Encapsulate Mosfets P-Channel Enhancement Mode Power MOSFET 9435 DESCRIPTION The 9435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -30V,ID = -5.1A RDS(ON) < 105mΩ @ VGS=-4.5V RDS(ON) < 55mΩ @ VGS=-10V SOP-8 top view ● High Power and current handing capability ● Lead free product is acquired D ● Surface Mount Package G Application ●PWM applications ●Load switch S ●Power management Schematic diagram pin Assignment Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit Unit -30 V ±20 V -5.1 A -20 A 2 W -55 To 150 ℃ 50 ℃/W Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ -30 -33 Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS GUANGDONG HOTTECH VGS=0V ID=-250μA INDUSTRIAL CO., LTD V Page:P5 -P1 Plastic-Encapsulate Mosfets 9435 Parameter Symbol Condition Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current Min Typ Max Unit VDS=-24V,VGS=0V -1 μA IGSS VGS=±20V,VDS=0V ±100 nA VGS(th) VDS=VGS,ID=-250μA -2 V VGS=-10V, ID =-4.6A 60 mΩ VGS=-6V, I 70 mΩ 105 mΩ On Characteristics (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance RDS(ON) -1 D=-4.7A VGS=-4.5V, ID=-2A Forward Transconductance gFS VDS=-15V,ID=-4.5A 4 7 S 1040 PF 420 PF 150 PF 15 nS Dynamic Characteristics (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=-15V,VGS=0V, F=1.0MHz Switching Characteristics (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=-15V, ID=-1A, 13 nS td(off) VGS=-10V,RGEN=6Ω 58 nS 21 nS 12 nC 2.2 nC 3 nC Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=-15V,ID=-5.1A,VGS=-10V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD VGS=0V,IS=-1.7A -1.2 V Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P5 -P2 Plastic-Encapsulate Mosfets 9435 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ton tr td(on) toff tf td(off) 90% VOUT 90% INVERTED 10% 10% 90% VIN 50% 50% 10% PULSE WIDTH Figure 1:Switching Test Circuit PD Power(W) ID- Drain Current (A） Figure 2:Switching Waveforms TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure 4 Drain Current ID- Drain Current (A) Rdson On-Resistance(mΩ) Figure 3 Power Dissipation Vds Drain-Source Voltage (V) Figure 5 Output CHARACTERISTICS GUANGDONG HOTTECH ID- Drain Current (A) Figure 6 Drain-Source On-Resistance INDUSTRIAL CO., LTD Page:P5 -P3 Plastic-Encapsulate Mosfets ID- Drain Current (A) Normalized On-Resistance 9435 TJ-Junction Temperature(℃) Vgs Gate-Source Voltage (V) Figure 8 Drain-Source On-Resistance C Capacitance (pF) Rdson On-Resistance(mΩ) Figure 7 Transfer Characteristics Vgs Gate-Source Voltage (V) Vds Drain-Source Voltage (V) Figure 10 Capacitance vs Vds Vgs Gate-Source Voltage (V) Is- Reverse Drain Current (A) Figure 9 Rdson vs Vgs Qg Gate Charge (nC) Figure 11 Gate Charge GUANGDONG HOTTECH Vsd Source-Drain Voltage (V) Figure 12 Source- Drain Diode Forward INDUSTRIAL CO., LTD Page:P5 -P4 Plastic-Encapsulate Mosfets ID- Drain Current (A) 9435 Vds Drain-Source Voltage (V) Safe Operation Area r(t),Normalized Effective Transient Thermal Impedance Figure 13 Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P5 -P5