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MB10F

MB10F

  • 厂商:

    MDD(辰达半导体)

  • 封装:

    MBF

  • 描述:

    桥式整流器/整流桥 VRM=1000V,IO=1A,VF=1.1V,IR=5uA,

  • 数据手册
  • 价格&库存
MB10F 数据手册
MB2F THRU MB10F Voltage Range - 200 to 1000 Volts Current - 1.0 Ampere SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIERS Features MBF  Glass passivated die construction  Low forward voltage drop  High current capability  High surge current capability  Designed for surface mount application  Plastic material-UL flammability 94V-0 Mechanical Data MAX Case : JEDEC MBF Molded plastic body Terminals : Solder plated, solderable per MIL-STD-750,Method 2026 Polarity : Polarity symbol marking on body Mounting Position : Any Weight : 0.0026 ounce, 0.075 grams (1) (2) - + ~ ~ (3) Maximum Ratings And Electrical Characteristics Ratings at 25 °C ambient temperature unle ss otherwise specified. (4) Dimensions in inches and (millimeters) Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Parameter SYMBOLS MDD MB2F MDD MB4F MDD MB6F Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage VRRM VRMS VDC 200 140 200 400 280 400 600 420 600 Maximum average forward rectified current at TC=125°C IF(AV) 1.0 A IFSM 35 A VF 1.1 V IR 5 40 uA mA CJ 13 PF Marking Code Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage drop per leg at 0.5A Maximum DC reverse current TA=25 at rated DC blocking voltage TA=100 Typical junction capacitance (NOTE1) Typical thermal resistance(NOTE2) Operating temperature range storage temperature range R JA 80 R JC 25 TJ TSTG MDD MB8F -55 to +150 -55 to +150 800 560 800 MDD MB10F UNITS 1000 700 1000 V V V °C/W °C °C Note: 1. Measured at 1MHz and applied reverse voltage of 4 V D.C. 2. Mounted on glass epoxy PC board with 4×1.5"×1.5"(3.81×3.81 cm)copper pad. http://www.microdiode.com Rev:2024A2 Page :1 MB2F THRU MB10F Voltage Range - 200 to 1000 Volts Current - 1.0 Ampere Ratings And Characteristic Curves Fig.2 Typical Reverse Characteristics Fig.1 Average Rectified Output Current Derating Curve 1.2 Instaneous Reverse Current(μ A) 100 Average Rectified Output Current (A) 1.0 0.8 0.6 0.4 0.2 Resistive or Inductive Load 0.0 25 50 75 100 125 150 TJ=125°C 10 1.0 TJ=25°C 0.1 175 00 Case Temperature (°C) 20 40 60 80 100 120 140 percent of Rated Peak Reverse Voltage (%) Fig.3 Typical Instaneous Forward Fig.4 Typical Junction Capacitance Characteristics TJ=25°C 100 Junction Capacitance (pF) Instaneous Forward Current (A) 10 1.0 0.1 pulse with 300μ s 1% duty cycle 0.01 00.. 00 0.5 1.0 1.5 TJ=25°C 10 1 2.0 0.1 1.0 10 100 Reverse Voltage (V) Instaneous Forward Voltage (V) Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Peak Forward Surage Current (A) 40 30 20 10 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 10 100 Number of Cycles The curve above is for reference only. http://www.microdiode.com Rev:2024A2 Page :2 MB2F THRU MB10F Voltage Range - 200 to 1000 Volts Current - 1.0 Ampere Suggested Pad Layout P2 P1 Dim Min P1 6.00 P2 2.40 Q1 1.84 Q2 1.20 Q1 Q2 Dimensions in millimeters http://www.microdiode.com Rev:2024A2 Page :3
MB10F 价格&库存

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MB10F
    •  国内价格
    • 20+0.27500
    • 100+0.16400
    • 500+0.11480
    • 5000+0.08200
    • 10000+0.07800
    • 50000+0.07210

    库存:104279

    MB10F
      •  国内价格
      • 1+0.42665
      • 500+0.14145
      • 2500+0.09476
      • 5000+0.07763

      库存:7813

      MB10F
      •  国内价格
      • 1+0.08260
      • 30+0.07960
      • 100+0.07362
      • 500+0.06763
      • 1000+0.06464

      库存:1505