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ES1D

ES1D

  • 厂商:

    LGE(鲁光)

  • 封装:

    SMA(DO-214AC)

  • 描述:

    快/超快恢复二极管 SMA VRRM=200V IR=5μA IF=1A

  • 数据手册
  • 价格&库存
ES1D 数据手册
ES1A-ES1J Surface Mount Rectifiers VOLTAGE RANGE: 50 --- 600 V CURRENT: 1.0 A Features — — 2.6± 0.15 — 4.5± 0.1 5.1± 0.2 2.1± 0.2 Mechanical Data — — Case:JEDEC DO-214AC,molded plastic Terminals: Solderable per MIL- STD-202,Method 208 — Polarity: Color band denotes cathode — Weight: 0.002 ounces,0.064 grams — Mounting position: Any 0.2± 0.05 1.3± 0.2 0.203MAX — — DO-214AC(SMA) Low cost Low leakage Low forward voltage drop High current capability Easily cleaned with Alcohol,Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0 1.5± 0.1 — Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25  ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. ES1A ES1B ES1C ES1D ES1G ES1H ES1J UNITS Maximum recurrent peak reverse voltage VRRM 50 100 150 200 400 500 600 V Maximum RMS voltage VRMS 35 70 105 140 280 350 420 V VDC 50 100 150 200 400 500 600 V Maximum DC blocking voltage Maximum average forward rectified current @TA=75 IF(AV) 1.0 A IFSM 30 A Peak forward surge current 8.3ms single half-sine-wave superimposed on rated load @TJ=125 Maximum instantaneous forward voltage at1.0 A Maximum reverse current at rated DC blocking voltage Typical reverse recovery time @TA=25 @TA=125 (Note1) VF IR 0.98 1.25 5.0 200 A 35 ns pF (Note2) CJ 19 Typical thermal resistance (Note3) RθJA 50 TJ - 55 ---- + 150 TSTG - 55 ---- + 150 Storage temperature range V trr Typical junction capacitance Operating junction temperature range 1.70 NOTE: 1. Measured with IF=0.5A, IR=1A, Irr =0.25A. 2. Measured at 1.0MHZ and applied reverse voltage of 4.0V DC. 3. Thermal resistance f rom junction to ambient and junction to lead P.C.B.mounted on 0.27''X0.27''(7.0X7.0mm2) copper pad areas /W ES1A-ES1J Surface Mount Rectifiers Ratings And Characteristic Curves FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 50 N 1. 10 N 1. trr +0.5A D.U.T. 0 PULSE GENERATOR (NOTE2) (+) 25VDC (approx) (-) -0.25A OSCILLOSCOPE (NOTE 1) 1 NONINDUCTIVE -1.0A 1cm SET TIME BASE FOR 10/15 ns/cm FIG.2 -- TYPICAL FORWARD CHARACTERISTIC ES1F-ES1G T J =25 Pulse W idth=300 µ S 1.0 ES1A-ES1D ES1H-ES1J 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 FIG.3 -- FORWARD DERATING CURVE AVERAGE FORWARD CURRENT AMPERES 100 AMPERES INSTANTANEOUS FORWARD CURRENT NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF. JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 . 1 0 0 10 6 4      TJ=25 2 1 0.1 0.2 0.4 1 2 4 10 20 40 REVERSE VOLTAGE,VOLTS 100 75 100 125 150 175 30 8.3ms Single Half Sine-Wave AMPERES 20 50 FIG.5 -- PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT JUNCTION CAPACITANCE,pF 40 25 AMBIENT TEMPERATURE, FIG.4 -- TYPICAL JUNCTION CAPACITANCE 60 Single Phase Half Wave 60HZ Resistive or Inductive Load 0.5 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 200 100 z 15 0 1 5 10 50 NUMBER OF CYCLES AT 60Hz 100

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ES1D
  •  国内价格
  • 1+0.07369
  • 30+0.07100
  • 100+0.06830
  • 500+0.06291
  • 1000+0.06021
  • 2000+0.05859

库存:2260

ES1D
    •  国内价格
    • 20+0.12918
    • 200+0.10219
    • 600+0.08721
    • 5000+0.07561
    • 10000+0.06783
    • 20000+0.06362

    库存:2431