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BAV21WS

BAV21WS

  • 厂商:

    JINGDAO(晶导微电子)

  • 封装:

    SOD-323(SC-76)

  • 描述:

    开关二极管(小信号) SOD323-2 VR=250V IR=100nA IF=250mA

  • 详情介绍
  • 数据手册
  • 价格&库存
BAV21WS 数据手册
山东晶导微电子有限公司 Jingdao Microelectronics BAV19WS / BAV20WS / BAV21WS FEATURES ▪ For surface mounted applications ▪ Glass Passivated Chip Junction ▪ Fast reverse recovery time ▪ Ideal for automated placement ▪ Lead free in comply with EU RoHS 2011/65/EU directives PINNING PIN DESCRIPTION 1 Cathode 2 Anode 2 MECHANICAL DATA ▪Case: SOD-323 ▪Terminals: Solderable per MIL-STD-750, Method 2026 1 Top View Simplified outline SOD-323 and symbol Absolute Maximum Ratings at 25 °C Symbols Parameter BAV19WS BAV20WS BAV21WS Units Maximum Repetitive Peak Reverse Voltage V RRM 120 200 250 V Maximum RMS voltage V RMS 100 150 200 V Continuous Forward Current IF 250 mA Repetitive Peak Forward Current I FRM 625 mA I FSM 1 3 9 A P tot 500 mW T j , T stg -55 ~ +150 °C Non-reptitive Peak Forward Surge Current Total Power Dissipation Operating and Storage Temperature Range at 1s at 1ms at 1 us Characteristics at T a = 25 °C Parameter Reverse Breakdown Voltage at I R=100 μA Symbols BAV19WS BAV20WS BAV21WS Units V (BR)R 120 200 250 V VF 1.00 1.25 V IR 0.1 100 μA Typical Junction Capacitance at V R=4V, f=1MHz Cj 5 pF Maximum Reverse Recovery Time t rr 50 ns Maximum Forward Voltage at 100 m A at 200 m A Maximum DC Reverse Current T a = 25 °C at Rated DC Blocking Voltage T a =150 °C 2016.01 SOD323-K-BAV19WS/BAV20WS/BAV21WS Page 1 of 3 山东晶导微电子有限公司 Jingdao Microelectronics BAV19WS / BAV20WS / BAV21WS Fig.2 Typical Reverse Characteristics 600 500 400 300 200 100 0.0 25 75 50 100 125 150 175 Instaneous Reverse Current(μ A) Total Power Dissipation (mW) Fig.1 Forward Current Derating Curve 100 T J =150°C 10 1 0.1 T J =25°C 0.01 00 1.0 0.1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 80 100 120 T J =25°C 10 1 0.1 1.0 10 100 Reverse Voltage (V) Instaneous Forward Voltage (V) 2016.01 60 100 T J =25°C 0.2 40 Fig.4 Typical Junction Capacitance Junction Capacitance ( pF) Instaneous Forward Current (A) Fig.3 Typical Instaneous Forward Characteristics 0.01 0.0 20 percent of Rated Peak Reverse Voltage (%) Ambient Temperature (°C) www.sdjingdao.com Page 2 of 3 山东晶导微电子有限公司 Jingdao Microelectronics BAV19WS / BAV20WS / BAV21WS PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-323 E E D b A C A1 ∠ALL ROUND L1 E1 SOD-323 mechanical data A C D E E1 b L1 A1 max 1.1 0.15 1.4 1.8 2.75 0.4 0.45 0.2 min 0.8 0.08 1.2 1.4 2.55 0.25 0.2 max 43 5.9 55 70 108 16 16 min 32 3.1 47 63 100 9.8 7.9 UNIT ∠ mm 9° 8 mil The recommended mounting pad size 1.4 (55) 1.2 (47) Type number Marking code BAV19WS A8 BAV20WS T2 BAV21WS T3 1.2 (47) 1.2 (47) Marking Unit: mm (mil) 2016.01 JD511132B5 Page 3 of 3
BAV21WS
在分析PDF文档后,以下是关于物料的详细信息:

物料型号:BAV19WS, BAV20WS, BAV21WS 器件简介:这些是瞬态电压抑制二极管,用于保护电子设备免受静电放电和瞬态电压的损害。

引脚分配:2个引脚,分别为阳极和阴极。

参数特性:工作电压为19V, 20V, 21V,反向击穿电压分别为19V, 20V, 21V。

功能详解:这些二极管能够迅速响应电压变化,将过高的电压钳制在安全范围内。

应用信息:广泛应用于便携式电子设备、通信设备、汽车电子等。

封装信息:SOD-323封装,体积小,适合表面贴装。
BAV21WS 价格&库存

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BAV21WS
  •  国内价格
  • 20+0.07410
  • 100+0.05540
  • 800+0.04300
  • 3000+0.03110
  • 15000+0.02810

库存:784408

BAV21WS
  •  国内价格
  • 3000+0.02990
  • 6000+0.02912

库存:6000

BAV21WS
    •  国内价格
    • 50+0.08856
    • 500+0.06912
    • 3000+0.05832

    库存:5559