MMBT5551

MMBT5551 SOT-23 Plastic-Encapsulate Transistors(NPN) Transistors RHOS SOT-23 Features  Complementary to MMBT5401  Epitaxial planar die construction  Power Dissipation of 300mW 1. BASE 2. EMITTER 3. COLLECTOR MARKING: G1 Maximum Ratings (Ratings at 25℃ ambient temperature unless otherwise specified.) Parameters Symbol Value Unit Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 160 V Emitter -Base Voltage VEBO 6 V Collector Current-Continuous IC 600 mA Collector Power Dissipation PC 300 mW Junction Temperature Tj 150 ℃ Storage Temperature Tstg -55-+150 ℃ Thermal resistance From junction to ambient RθJA 416 ℃/W Electrical Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified). Parameter Symbols Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current V(BR)CBO V(BR)CEO * V(BR)EBO ICBO IEBO hFE(1) * hFE(2) * hFE(3) * VCE(sat)1 * VCE(sat)2 * VBE(sat)1 * VBE(sat)2 * fT Cob DC current gain Collector-emitter saturation voltage Base -emitter saturation voltage Transition frequency Collector output capacitance Test Condition IC=100uA, IE=0 IC=1mA, IB=0 IE=10uA, IC=0 VCB=120V, IE=0 VEB=4V, IC=0 VCE=5V, IC=1mA VCE=5V, IC=10mA VCE=5V, IC=50mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCE=10V, IC=10mA,f=100MHz VCB=10V, IE=0, f=1MHz Limits Min 180 160 6 Max 50 50 80 100 30 Unit V V V nA nA 300 0.15 0.20 1.00 1.00 300 6 100 V V V V MHz pF *Pulse test: pulse width≤300us, duty cycle≤2.0% CLASSIFICATION OF hFE(2) HFE Rev 8: Nov 2014 100-300 RANK L H RANGE 100-200 200-300 www.born-tw.com Page 1 of 2 MMBT5551 Transistors Rev 8: Nov 2014 SOT-23 Plastic-Encapsulate Transistors(NPN) www.born-tw.com RHOS Page 2 of 2