BC807
PNP Silicon Epitaxial Planar Transistors
SOT-23
FEATURE
Ldeally suited for automatic insertion
Epitaxial planar die construction
Complementary NPN type available(BC817)
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-50
V
VCEO
Collector-Emitter Voltage
-45
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current
-500
mA
PC
Collector Power Dissipation
300
mW
Thermal Resistance From Junction To Ambient
417
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RΘJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Symbol
Parameter
T est conditions
Min
Max
Unit
Collector-base breakdown voltage
VCBO
IC= -10μA, IE=0
-50
V
Collector-emitter breakdown voltage
VCEO
IC==
-10mA, IB 0
-45
V
Emitter-base breakdown voltage
VEBO
IE= -1μA, IC=0
-5
V
Collector cut-off current
ICBO
V
=
CB= -45V, IE 0
-0.1
μA
Emitter cut-off current
IEBO
V=
EB= -4 V, IC 0
-0.1
μA
hFE(1)
VCE= -1V, IC= -100mA
100
hFE(2)
VCE= -1V, IC= -500mA
40
DC current gain
600
Collector-emitter saturation voltage
VCE(sat)
IC=-500mA, IB= -50mA
-0.7
V
Base-emitter saturation voltage
VBE(sat)
IC= -500mA, IB= -50mA
-1.2
V
fT
Transition frequency
VCE= -5V, IC= -10mA
f=100MHz
100
CLASSIFICATION OF hFE (1)
Rank
BC807-16
BC807-25
BC807-40
Range
100-250
160-400
250-600
www.slkormicro.com
1
MHz
BC807
Typical Characteristics
Static Characteristic
- 200
o
hFE
-0.7mA
-0.6mA
- 160
-0.5mA
- 120
-0.4mA
-0.3mA
- 80
Ta=100 C
- 400
DC CURRENT GAIN
COLLECTOR CURRENT
hFE —— IC
- 500
-1mA
COMMON
-0.9mA EMITTER
Ta=25℃
-0.8mA
- 240
IC
(mA)
- 280
- 300
o
Ta=25 C
- 200
-0.2mA
- 40
VCE= -1V
IB=-0.1mA
0
0
- 2
- 6
- 10
- 8
- 4
COLLECTOR-EMITTER VOLTAGE
- 12
- 14
VCE (V)
- 100
- 1
- 16
VBEsat —— IC
-1.2
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (V)
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
VCEsat ——
-0.4
β=10
-1.0
-0.8
- 10
COLLECTOR CURRENT
Ta=25℃
-0.6
Ta=100℃
IC
- 100
(mA)
- 500
IC
β=10
-0.3
-0.2
Ta=100℃
-0.1
-0.4
Ta=25℃
-0.2
-0.1
-1
-10
COLLECTOR CURRENT
IC
——
-100
IC
-0.0
-0.1
- 500
-1
(mA)
-10
-100
COLLECTOR CURRENT
VBE
-1000
Cob / Cib
100
——
IC
VCB / VEB
f=1MHz
IE=0 / IC=0
o
Ta=25 C
(pF)
IC (mA)
50
Cib
COLLECTOR CURRENT
C
-100
o
CAPACITANCE
Ta=100 C
-10
Ta=25℃
- 500
(mA)
10
Cob
-1
VCE=-1V
-0.1
- 0.3
- 0.4
- 0.5
- 0.7
- 0.8
- 0.6
BASE-EMITTER VOLTAGE
VBE(V)
——
1
- 1.0
IC
Pc
0.4
(MHz)
100
TRANSITION FREQUENCY
fT
- 5
REVERSE VOLTAGE
0
COLLECTOR POWER DISSIPATION
Pc (W)
fT
300
- 0.9
——
- 10
V
(V)
Ta
0.3
0.2
0.1
VCE=-5V
o
Ta=25 C
10
-1
COLLECTOR CURRENT
www.slkormicro.com
0.0
- 60
- 10
IC
0
25
50
75
AMBIENT TEMPERATURE
(mA)
2
100
Ta
125
(℃ )
150
BC807
SOT-23 Package Outline Dimensions
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
www.slkormicro.com
3
Dimensions In Millimeters
Min
Max
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.950 TYP
1.800
2.000
0.550 REF
0.300
0.500
0°
8°
Dimensions In Inches
Min
Max
0.035
0.045
0.000
0.004
0.035
0.041
0.012
0.020
0.003
0.006
0.110
0.118
0.047
0.055
0.089
0.100
0.037 TYP
0.071
0.079
0.022 REF
0.012
0.020
0°
8°
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