DTC143ZE

DTC143ZE NPN Silicon Epitaxial Planar Digital Transistor Features • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process Collector (Output) Base (Input) R1 R2 Emitter (Common) Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit VCEO 50 V Input Voltage VI - 5 to + 30 V Collector Current IC 100 mA Power Dissipation Ptot 150 mW Tj 150 O Tstg - 55 to + 150 O Collector Emitter Voltage Junction Temperature Storage Temperature Range C C Characteristics at Ta = 25 OC Parameter Symbol Min. Typ. Max. Unit DC Current Gain at VCE = 5 V, IC = 10 mA hFE 80 - - - Collector Base Cutoff Current at VCB = 50 V ICBO - - 0.5 µA Emitter Base Cutoff Current at VEB = 5 V IEBO - - 1.8 mA VCE(sat) - - 0.3 V Input on Voltage at VCE = 0.3 V, IC = 5 mA VI(on) - - 1.3 V Input off Voltage at VCE = 5 V, IC = 100 µA VI(off) 0.5 - - V Transition frequency at VCE = 10 V, -IE = 5 mA, f = 100 MHz fT - 250 - MHz Input Resistance R1 3.29 4.7 6.11 KΩ Resistance Ratio R 2 / R1 8 10 12 - Collector Emitter Saturation Voltage at IC = 5 mA, IB = 0.25 mA REV.08 1 of 2 DTC143ZE REV.08 2 of 2