WPM2341A-3/TR

WPM2341A WPM2341A P-Channel Enhancement Mode Mosfet Http://www.sh-willsemi.com Features z Higher Efficiency Extending Battery Life z Miniature SOT23-3 Surface Mount Package z Super high density cell design for extremely low RDS (ON) 3 1 Applications 2 zDC/DC Converter zLoad Switch zBattery Powered System z zLCD Display inverter zPower Management in Portable, Battery Powered Products SOT 23-3 pin connections : PïChannel ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Steady Parameter Symbol Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±12 Continuous Drain Current a (TJ = 150 °C) TA=25°C TA=80°C Pulsed Drain Current IS (Diode Conduction) a Dissipation a TA=25°C TA=80°C Operating Junction and Storage Temperature Range State PD Unit G -3.5 -3.2 -2.5 1 3 S V -4.3 IDM Continuous Source Current Maximum Power ID 5s 2 Top View Marking: A -20 -1.7 -1 1.25 0.75 0.7 0.42 Drain 3 W41U W 2 1 TJ, Tstg - 55 to 150 D Gate °C Source W 41= Device Code = Month code (A~Z) a. Surface Mounted on FR4 Board using 1 in sq pad size,2oz Cu. Order information PartNumber WPM2341AͲ3/TR  Will Semiconductor Ltd. Shipping  Package SOT23-3  1 3000Tape&Reel 2019/11/29- Rev. 1.9 WPM2341A THERMAL RESISTANCE RATINGS  Parameter Junction-to-Ambient Thermal Resistance b Symbol t”5s Steady State Typical Maximum 75 100 125 165 RșJA Unit °C/W b. Surface Mounted on FR4 Board using 1 in sq pad size, 2oz Cu. MOSFET ELECTRICAL CHARACTERISTICS(TJ =25 ć unless otherwise specified) Test Condition Parameter Symbol Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS = 0V,ID = -250ȝA Zero Gate Voltage Drain Current IDSS VDS =-16V,VGS = 0V Gate –Source leakage current IGSS VGS = f12 V ,VDS = 0V On Characteristics Gate Threshold Voltage VGS(th) VGS = VDS, ID =-250ȝA Static Drain-Source VGS = -4.5V, ID = -3.3A RDS(on) On-Resistance VGS = -2.5V,ID = -2.8 A Forward Transconductance gFS VDS = -5 V, ID = -3.3A Dynamic Characteristics Input Capacitance Ciss VDS = -6 V, VGS = 0V, Output Capacitance Coss f = 1.0 MHz Reverse Transfer Capacitance Crss Switching Characteristics Turn-On Delay Time td(on) Turn-On Rise Time tr VGS = -4.5V, VDD = -6 V, ID = -1.0A, RG=6.0ȍ, Turn-Off Delay Time td(off) Turn-Off Fall Time tf Total Gate Charge QG(TOT) QG(TH) Threshold gate charge VDS = -6 V,ID = -3.3A, VGS =-4.5V Gate-Source Charge QGS QGD Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Forward Diode Voltage VSD VGS = 0V,IS = -1.6A Will Semiconductor Ltd. 2 Min Typ Max Units -1 f100 V ȝA nA -20 -0.35 -0.63 52 65 3.0 8 0.2 1.2 2.2 -0.8 -1.00 61 71 V mȍ mȍ S 700 160 120 pF pF pF 25 55 90 60 13 ns ns ns ns nC nC nC nC V 2019/11/29- Rev. 1.9 WPM2341A Typical Characteristics (TJ = 25°C unless otherwise noted) 20 20 VGS =-5 thru -2.5 V TC = - 55 °C 16 -2 V -I D - Drain Current (A) -I D - Drain Current (A) 16 12 8 -1.5 V 4 25 °C 125 °C 12 8 4 -1 V 0 0 1 2 3 4 0 0.0 5 0.5 -VDS - Drain-to-Source Voltage (V) 1.5 2.0 2.5 -V GS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 900 0.10 750 0.08 VGS =-2.5 V C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 1.0 0.06 0.04 VGS =-4.5 V 600 Ciss 450 300 0.02 Coss 150 Crss 0 0.00 0 4 8 12 16 0 20 8 12 16 -I D - Drain Current (A) -VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 20 1.5 5 1.4 VDS =-6 V ID =-3.3 A 1.3 3 2 1 VGS =-4.5 V ID =-3.3 A 1.2 (Normalized) 4 R DS(on) - On-Resistance -VGS - Gate-to-Source Voltage (V) 4 1.1 1.0 0.9 0.8 0.7 0.6 - 50 0 0 2 4 6 8 10 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Will Semiconductor Ltd. 3 2019/11/29- Rev. 1.9 150 WPM2341A Typical Characteristics (TJ = 25°C unless otherwise noted) 0.15 20 R DS(on) - On-Resistance (Ω) -I S - Source Current (A) 10 TJ = 150 °C TJ = 25 °C 1 ID =-3.3 A 0.09 ID = - 2 A 0.06 0.03 0.00 0.1 0.0 0.12 0.2 0.4 0.6 1.0 0.8 0 1.2 1 2 3 4 -VSD - Source-to-Drain Voltage (V) -VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.4 5 12 10 0.3 8 0.2 Power (W) V GS(th) Variance (V) ID = -250μA 0.1 0.0 6 4 TA = 25 °C 2 - 0.1 - 0.2 - 50 0 - 25 0 25 50 75 100 125 150 0.1 0.01 TJ - Temperature (°C) 1 10 100 Time (s) Threshold Voltage Single Pulse Power 100 IDM Limited Limited by RDS(on)* -I D - Drain Current (A) 10 P(t) = 0.0001 P(t) = 0.001 1 0.1 ID(on) Limited P(t) = 0.01 TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 P(t) = 0.1 P(t) = 1 P(t) = 10 DC 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area Will Semiconductor Ltd. 4 2019/11/29- Rev. 1.9 600 WPM2341A Typical Characteristics (TJ = 25°C unless otherwise noted) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 125 °C/W 0.02 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Will Semiconductor Ltd. 5 2019/11/29- Rev. 1.9 WPM2341A Power Dissipation Characteristics 1. The package of WPM2341A is SOT23-3, surface mounted on FR4 Board using 1 in sq pad sizeˈ 2 oz CuˈR șJA is 125 ć/W. 2. The power dissipation PD is based on TJ(MAX)=150°C, and the relation between TJ and PD is TJ = Ta + R șJA* PD , the maximum power dissipation is determined by R șJA . 3. The R șJA is the thermal impedance from junction to ambient, using larger PCB pad size can get smaller R șJA and result in larger maximum power dissipation. 125 ć/W when mounted on a 1 in2 pad of 2 oz copper. Will Semiconductor Ltd. 6 2019/11/29- Rev. 1.9 :30$ PACKAGE OUTLINE DIMENSIONS SOT-23-3L D θ E E1 L b e c e1 SIDE VIEW A1 A2 A TOP VIEW SIDE VIEW Symbol Dimensions in Millimeters Min. Typ. Max. A - - 1.25 A1 0.00 - 0.15 A2 1.00 1.10 1.20 b 0.30 0.40 0.50 c 0.10 - 0.20 D 2.82 2.92 3.03 E1 2.60 2.80 3.00 E 1.50 1.62 1.73 e 0.95 BSC e1 1.80 1.90 2.00 L 0.30 0.45 0.60 θ 0° - 8° Will Semiconductor Ltd. 7 2019/11/29- Rev. 1.9 WPM2341A TAPE AND REEL INFORMATION Reel Dimensions RD Reel Dimensions Tape Dimensions W P1 Quadrant Assignments For PIN1 Orientation In Tape Q1 Q2 Q1 Q2 Q3 Q4 Q3 Q4 RD Reel Dimension W Overall width of the carrier tape P1 Pitch between successive cavity centers Pin1 Pin1 Quadrant Will Semiconductor Ltd. User Direction of Feed 7inch 13inch 1 8mm 12mm 16mm 2mm 4mm 8mm Q1 Q2 Q3 8 Q4 2019/11/29- Rev. 1.9