MMBTSC2712

NPN Silicon Epitaxial Planar Transistor for audio frequency general purpose amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. Features ․High voltage and high current: VCEO=50V, IC=150mA(max) ․High hFE: hFE=70~700 1.Base 2.Emitter 3.Collector SOT-23 Plastic Package ․Low noise: NF=1dB(typ.), 10dB(max) ․Small package Absolute Maximum Ratings (Ta = 25 C) O Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 5 V Collector Current IC 150 mA Base Current IB 30 mA Ptot 200 mW Junction Temperature Tj 125 O Storage Temperature Range TS -55 to +125 O Power Dissipation 1 of 4 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. C C Characteristics at Tamb=25 C O Symbol Min. Typ. Max. Unit DC Current Gain at VCE=6V, IC=2mA O hFE 70 - 140 - Y hFE 120 - 240 - G hFE 200 - 400 - L hFE 350 - 700 - ICBO - - 0.1 µA IEBO - - 0.1 µA VCE(sat) - - 0.25 V fT 80 - - MHz Cob - 2 3.5 pF NF - 1 10 dB Collector Cutoff Current at VCB=60V Emitter Cutoff Current at VEB=5V Collector Saturation Voltage at IC=100mA, IB=10mA Transition Frequency at VCE=10V, IC=1mA Collector Output Capacitance at VCB=10V, f=1MHz Noise Figure at VCE=6V, IC=0.1mA, f=1KHz, Rg=10KΩ 2 of 4 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. 3 of 4 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT-23 4 of 4 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd.