WSF15P10

WSF15P10 P-Ch MOSFET Product Summery General Description The WSF15P10 is the highest performance trench P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID -100V 150mΩ -13A Applications The WSF15P10 meet the RoHS and Green Product requirement,100% EAS guaranteed with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z Load Switch z Advanced high cell density Trench technology TO-252 Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM Rating Units Drain-Source Voltage -100 V Gate-Source Voltage ±20 V 1 -13 A 1 -7 A -45 A Continuous Drain Current, -VGS @ -10V Continuous Drain Current, -VGS @ -10V Pulsed Drain Current 2 EAS Single Pulse Avalanche Energy 25 mJ IAS Avalanche Current -10 A 3 4 PD@TC=25℃ Total Power Dissipation 50 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Max. Unit RθJA Thermal Resistance Junction-Ambient 1 --- 50 ℃/W RθJC Thermal Resistance Junction-Case1 --- 2.5 ℃/W www.winsok.tw Typ. Page 1 Dec.2016 WSF15P10 P-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) 2 Static Drain-Source On-Resistance Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=-250uA -100 --- --- V Reference to 25℃ , ID=-1mA --- -0.021 --- V/℃ VGS=-10V , ID=-5.5A --- 150 205 mΩ -1 --- -3 V --- 4.08 --- mV/℃ VDS=-48V , VGS=0V , TJ=25℃ --- --- 1 VDS=-48V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =-250uA △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-10V , ID=-6A --- 8 --- S Qg Total Gate Charge (-4.5V) --- 21 --- Qgs Gate-Source Charge --- 4.3 --- Qgd Gate-Drain Charge --- 5.2 --- Turn-On Delay Time --- 11 23 Td(on) Tr Td(off) Tf VDS=-50V , VGS=-10V , ID=-5.5A uA nC Rise Time VDD=-30V , VGS=-10V , RG=6Ω, --- 10 20 Turn-Off Delay Time ID=-1A ,RG=30Ω. --- 55 120 --- 30 65 --- 1050 --- --- 70 --- --- 30 --- Min. Typ. Max. Unit 20 --- --- mJ Min. Typ. Max. Unit A Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=-30V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=-25V , L=0.5mH , IAS=-10A Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current VSD Diode Forward Voltage2 2,6 VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ --- --- -2.0 --- --- -45 A --- --- -1.2 V Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t≦10sec. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.5mH,IAS=-10A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.winsok.tw Page 2 Dec.2016 WSF15P10 P-Ch MOSFET Typical Characteristics 210 8 ID=-5.5A -ID Drain Current (A) 6 190 RDSON (mΩ) VGS=-10V VGS=-7V VGS=-5V 4 VGS=-4.5V 2 170 160 VGS=-3V 0 0 0.5 1 1.5 -VDS , Drain-to-Source Voltage (V) 130 2 2 Fig.1 Typical Output Characteristics 4 6 -VGS (V) 8 10 Fig.2 On-Resistance v.s Gate-Source 6 10 -VGS Gate to Source Voltage (V) IS Source Current(A) VDS=-50V 4 TJ=150℃ TJ=25℃ 2 0 0.0 0.4 0.8 ID=-5.5A 8 6 4 2 0 0 1.2 Fig.3 Forward Characteristics Of Reverse 5 7.5 10 Fig.4 Gate-Charge Characteristics 2.0 Normalized On Resistance 1.5 Normalized VGS(th) 2.5 QG , Total Gate Charge (nC) VSD , Source-to-Drain Voltage (V) 1.5 1 1.0 0.5 0.5 0 -50 0 50 100 TJ ,Junction Temperature ( ℃) -50 150 Fig.5 Normalized VGS(th) v.s TJ www.winsok.tw 0 50 100 150 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON v.s TJ Page 3 Dec.2016 WSF15P10 P-Ch MOSFET Capacitance (pF) 10000 100 F=1.0MHz 10us 1000 10 100us -ID (A) Ciss 1 100 10ms 100ms Coss DC TC=25℃ Single Pulse Crss 0 10 1 5 9 13 17 21 -VDS Drain to Source Voltage(V) 0.1 25 1 Fig.7 Capacitance 10 100 -VDS (V) 1000 Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 P DM T ON 0.02 0.01 T D = TON/T TJpeak = TC+P DMXRθJC SINGLE 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform www.winsok.tw Fig.11 Unclamped Inductive Waveform Page 4 Dec.2016 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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