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TRANSISTOR˄NPN˅
S9013
)($785(6
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627
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1ˊBASE
2ˊEMITTER
3ˊCOLLECTOR
0$5.,1*-
0$;,0805$7,1*6TA=25Я unless otherwise noted)
Symbol
Parameter
Value
Units
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
25
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
500
mA
PC
Collector Power Dissipation
300
mW
Tj
Junction Temperature
150
Я
Tstg
Storage Temperature
ol
ou
r
VCBO
Я
-55-150
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ec
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Symbol
V(BR)CBO
bl
u
&ROOHFWRUEDVHEUHDNGRZQYROWDJH
Test
conditions
MIN
TYP
MAX
UNIT
IC= 100μA,
IE=0
40
V
IB=0
25
V
5
V
&ROOHFWRUHPLWWHUEUHDNGRZQYROWDJH
V(BR)CEO
IC= 0.1mA,
(PLWWHUEDVHEUHDNGRZQYROWDJH
V(BR)EBO
IE=100μA, IC=0
&ROOHFWRUFXWRIIFXUUHQW
ICBO
VCB=40V, IE=0
0.1
μA
&ROOHFWRUFXWRIIFXUUHQW
ICEO
VCE=20V, IB=0
0.1
μA
(PLWWHUFXWRIIFXUUHQW
IEBO
VEB= 5V, IC=0
0.1
μA
hFE(1)
VCE=1V, IC= 50mA
120
hFE(2)
VCE=1V, IC=500mA
40
'&FXUUHQWJDLQ
00
&ROOHFWRUHPLWWHUVDWXUDWLRQYROWDJH
VCE(sat)
IC=500mA, IB= 50mA
0.6
V
%DVHHPLWWHUVDWXUDWLRQYROWDJH
VBE(sat)
IC=500mA, IB= 50mA
1.2
V
fT
7UDQVLWLRQIUHTXHQF\
VCE=6V,
IC= 20mA
f=30MHz
150
MHz
CLASSIFICATION OFK)(
3DJHI
RANK
L
H
J
RANGE
5(9
7\SLFDO&KDUDFWHULVWLFV
6WDWLF&KDUDFWHULVWLF
100
350uA
Ta=100ć
hFE
(mA)
80
COMMON EMITTER
VCE=1V
COMMON
EMITTER
Ta=25ć
400uA
250uA
200uA
40
Ta=25ć
DC CURRENT GAIN
COLLECTOR CURRENT
IC
300uA
60
,&
K)(²
²
1000
150uA
100uA
20
100
IB=50uA
10
0
0
4
8
12
16
COLLECTOR-EMITTER VOLTAGE
VCE
1
20
9&(VDW²
² ,&
r
(mA)
,&
Ta=100ć
0.4
ol
Ta=25ć
30
IC
Ta=25ć
0.8
ou
Ta=100ć
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
300
500
100
9%(VDW²²
1.2
100
30
10
COLLECTOR CURRENT
500
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
3
(V)
ȕ=10
ȕ=10
10
0.0
10
3
100
30
500
1
ec
1
COLLECTOR CURRENT
IC
3
(mA)
bl
u
COMMON EMITTER
VCE=1V
COLLECTOR CURRENT
3
0.3
0.1
0.0
0.2
0.4
0.6
0.8
1
0.3
I7²
² ,&
COLLECTOR POWER DISSIPATION
PC (mW)
(MHz)
fT
10
V
20
(V)
3&²
²7D
400
100
10
3
REVERSE VOLTAGE
300
TRANSITION FREQUENCY
f=1MHz
IE=0/ IC=0
Ta=25ć
3
1
0.1
1.0
VCE=6V
Ta=25ć
300
200
100
0
10
100
30
COLLECTOR CURRENT
3DJHI
9&%9(%
Cob
10
BASE-EMMITER VOLTAGE VBE (V)
1000
500
(mA)
Cib
Ta=25ć
1
IC
30
Ta=100ć
10
&RE&LE²
²
100
CAPACITANCE C (pF)
IC (mA)
30
100
COLLECTOR CURRENT
,&²² 9%(
100
30
10
IC
(mA)
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
150
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