UMW
R
UMW 2SC2712
SOT-23 Plastic-Encapsulate Transistors
SOT-23
2SC2712
TRANSISTOR (NPN)
1. BASE
2. EMITTER
FEATURE
3. COLLECTOR
· Audio Frequency General Purpose Amplifier Applications
· Low Noise: NF=1 dB (Typ),10dB(MAX)
· Complementary to 2SA1162
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
150
mA
PC
Collector Power Dissipation
150
mW
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= 100μA, IE=0
60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA ,IB=0
50
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 100μA, IC=0
5
V
Collector cut-off current
ICBO
VCB= 60 V, IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB=5V, IC=0
0.1
μA
DC current gain
hFE
VCE=6V, IC=2mA
Collector-emitter saturation voltage
VCE(sat)
fT
Transition frequency
Output capacitance
Cob
Noise Figure
NF
70
IC= 100mA, IB=10mA
VCE=10V, IC= 1mA
700
0.1
0.25
80
VCB=10V, IE=0,f=1 MHz
VCE=6V,IC=0.1mA,f=1kHz,
Rg=10kΩ
V
MHz
2.0
3.5
pF
1.0
10
dB
CLASSIFICATION OF hFE
Rank
Range
Marking
www.umw-ic.com
O
Y
GR
BL
70-140
120-240
200-400
350-700
LO
LY
LG
LL
1
友台半导体有限公司
UMW
R
UMW 2SC2712
SOT-23 Plastic-Encapsulate Transistors
Static Characteristic
—— IC
hFE
400
10
COMMON EMITTER
VCE=6V
COMMON EMITTER
Ta=25℃
(mA)
8
50uA
300
hFE
40uA
6
DC CURRENT GAIN
COLLECTOR CURRENT
IC
45uA
35uA
30uA
4
25uA
20uA
15uA
2
Ta=100℃
Ta=25℃
200
100
10uA
IB=5uA
0
0.5
0
0
2
4
6
8
COLLECTOR-EMITTER VOLTAGE
VCEsat
0.3
VCE
10
1
10
(V)
100
COLLECTOR CURRENT
—— IC
150
(mA)
—— IC
VBEsat
1.2
IC
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (V)
β=10
0.2
Ta=100℃
0.1
Ta=25℃
Ta=25℃
0.8
Ta=100℃
0.4
β=10
0.0
0.0
1
10
100
COLLECTOR CURRENT
IC
150
(mA)
100
COLLECTOR CURRENT
—— VBE
fT
1000
——
IC
150
(mA)
IC
(MHz)
fT
Ta=100℃
10
TRANSITION FREQUENCY
IC
COLLECTOR CURRENT
150
10
COMMON EMITTER
VCE=6V
(mA)
100
IC
1
Ta=25℃
1
100
COMMON EMITTER
VCE=10V
o
Ta=25 C
0.1
0.2
10
0.4
0.6
0.8
1
1.0
Cob/ Cib
100
10
3
30
COLLECTOR CURRENT
BASE-EMMITER VOLTAGE VBE (V)
—— VCB/ VEB
Pc
——
IC
70
(mA)
Ta
200
f=1MHz
IE=0/ IC=0
COLLECTOR POWER DISSIPATION
Pc (mW)
Ta=25℃
10
CAPACITANCE
C
(pF)
Cib
Cob
1
0.1
0.2
150
100
50
0
1
REVERSE VOLTAGE
www.umw-ic.com
10
VR
0
20
(V)
25
50
75
AMBIENT TEMPERATURE
2
100
Ta
125
150
(℃)
友台半导体有限公司
UMW
R
UMW 2SC2712
SOT-23 Plastic-Encapsulate Transistors
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
www.umw-ic.com
3
Dimensions In Millimeters
Min
Max
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.950 TYP
1.800
2.000
0.550 REF
0.300
0.500
0°
8°
Dimensions In Inches
Min
Max
0.035
0.045
0.000
0.004
0.035
0.041
0.012
0.020
0.003
0.006
0.110
0.118
0.047
0.055
0.089
0.100
0.037 TYP
0.071
0.079
0.022 REF
0.012
0.020
0°
8°
友台半导体有限公司
UMW
R
www.umw-ic.com
UMW 2SC2712
SOT-23 Plastic-Encapsulate Transistors
4
友台半导体有限公司
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