2N3906

2N3906 描述 / Descriptions TO-92 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-92 Plastic Package. 特征 / Features 用途 / Applications 低电流，低电压。用于一般放大。 Low current, Low voltage. General purpose amplifier. 内部等效电路 / Equivalent Circuit 引脚排列 / Pinning 1 PIN1：Collector 23 PIN 2：Base PIN 3：Emitter 放大及印章代码 / hFE Classifications & Marking *HFE(1)分档及打印 分 档 1 HFE(1) 100~300 印记见下 具体内容以打印为准 打印（简例） 其 它 说 2N 3 906 H 331 封装外形：TO-92 管脚排列： E、B、C 明 & Marking www.slkormicro.com 1 2N3906 极限参数 / Absolute Maximum Ratings(Ta=25℃) 参数 Parameter 符号 Symbol 数值 Rating 单位 Unit Collector to Base Voltage VCBO -40 V Collector to Emitter Voltage VCEO -40 V Emitter to Base Voltage VEBO -5.0 V Collector Current - Continuous IC -200 mA Collector Power Dissipation PC 625 mW Junction Temperature Tj 150 ℃ Tstg -55～150 ℃ Storage Temperature Range 电性能参数 / Electrical Characteristics(Ta=25℃) 参数 Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage 符号 Symbol 测试条件 Test Conditions 最小值 典型值 最大值 单位 Min Typ Max Unit VCBO IC=-10μA IE=0 -40 V VCEO IC=-1.0mA IB=0 -40 V Emitter to Base Breakdown Voltage VEBO IE=-10μA IC=0 -5.0 V Collector Cut-Off Current ICBO VCB=-40V IE=0 -0.1 μA Emitter Cut-Off Current IEBO VEB=-5.0V IC=0 -0.1 μA hFE(1) VCE=-1.0V IC=-10mA 100 Collector to Emitter Saturation Voltage hFE(2) VCE=-1.0V IC=-100mA 30 VCE(sat) IC=-50mA IB=-5.0mA -0.4 V Base to Emitter Saturation Voltage VBE(sat) IC=-50mA IC=-10mA IB=-5.0mA VCE=-20V -0.95 V VCB=-5.0V IE=0 VCC=-3.0V VBE=-0.5V VCC=-3.0V IC=-10mA IB1=-1.0mA IC=-10mA DC Current Gain Current Gain Bandwidth Product fT Output Capacitance Cob Turn On Time Ton Turn Off Time Toff www.slkormicro.com f=100MHz f=100KHz IB1=-IB2=-1.0mA 2 300 250 MHz 4.5 pF 0.07 μs 0.3 μs 2N3906 电参数曲线图 / Electrical Characteristic Curve www.slkormicro.com 3