BC847
SOT-23 Plastic-Encapsulate Transistor
BC846A, B
BC847A, B, C
BC848A, B, C
SOT-23
TRANSISTOR (NPN)
1. BASE
2. EMITTER
FEATURES
Ideally suited for automatic insertion
For Switching and AF Amplifier Applications
3. COLLECTOR
PACKAGE SPECIFICATIONS
Package Reel Size
SOT-23
Reel DIA.
(mm)
Q'TY/Reel
(pcs)
Box Size
(mm)
QTY/Box
(pcs)
Carton Size
(mm)
Q'TY/Carton
(pcs)
330
3000
203×203×195
45000
438×438×220
180000
7'
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
Value
Parameter
Collector-Base Voltage
V
BC846
BC847
BC848
VCEO
Unit
80
50
30
Collector-Emitter Voltage
V
BC846
BC847
BC848
65
45
30
6
V
Collector Current –Continuous
0.1
A
PC*
Collector Power Dissipation
200
mW
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-65-150
℃
VEBO
Emitter-Base Voltage
IC
DEVICE MARKING
BC846A=1A; BC846B=1B;
BC847A=1E; BC847B=1F; BC847C=1G;
BC848A=1J; BC848B=1K: BC848C=1L
DN:T18B29A0
https://www.microdiode.com
Rev:2018A0
Page :1
BC847
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Symbol
Parameter
Collector-base breakdown voltage
Test conditions
VCBO
IC= 10µA, IE=0
65
VCEO
IC= 10mA, IB=0
VEBO
IE= 10µA, IC=0
45
Collector cut-off current
Collector cut-off current
ICBO
VCB=30 V , IE=0
BC846
VCE=60 V , IB=0
ICEO
Emitter cut-off current
VCE=45 V , IB=0
IEBO
VEB=5 V , IC=0
hFE
VCE= 5V, IC= 2mA
BC846A,847A,848A
BC846B,847B,848B
V
0.1
μA
0.1
μA
0.1
μA
VCE=30 V , IB=0
BC848
DC current gain
VCB=50 V , IE=0
BC848
BC847
6
VCB=70 V , IE=0
BC846
BC847
V
30
BC848
Emitter-base breakdown voltage
V
30
BC846
BC847
Max Unit
50
BC848
Collector-emitter breakdown voltage
Typ
80
BC846
BC847
Min
110
220
200
450
420
BC847C,BC848C
800
Collector-emitter saturation voltage
VCE(sat)
IC=100mA, IB= 5mA
0.5
V
Base-emitter saturation voltage
VBE(sat)
IC=100mA, IB= 5mA
1.1
V
Transition frequency
Collector output capacitance
fT
Cob
VCE= 5 V, IC= 10mA
f=100MHz
100
VCB=10V,f=1MHz
MHz
4.5
pF
The above data are for reference only.
https://www.microdiode.com
Rev:2018A0
Page :2
BC847
Typical Characteristics
Static Characteristic
(mA)
10
COMMON
EMITTER
Ta=25℃
8
——
IC
COMMON EMITTER
VCE= 5V
1000
DC CURRENT GAIN
IC
18uA
16uA
6
14uA
12uA
4
Ta=100℃
hFE
20uA
COLLECTOR CURRENT
hFE
3000
10uA
8uA
Ta=25℃
100
6uA
2
4uA
IB=2uA
0
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE
VBEsat ——
1000
6
10
7
1
VCEsat
IC
——
IC
100
(mA)
IC
500
β=20
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
β=20
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
10
COLLECTOR CURRENT
VCE (V)
800
Ta=25℃
600
Ta=100 ℃
400
200
0.1
1
10
COLLECTOR CURREMT
IC
100
——
IC
Ta=100 ℃
100
Ta=25℃
10
0.1
100
1
10
COLLECTOR CURREMT
(mA)
VBE
fT
500
100
(mA)
IC
T =2
5℃
a
TRANSITION FREQUENCY
10
T =1
00℃
a
COLLECTOR CURRENT
IC
fT
(mA)
(MHz)
COMMON EMITTER
VCE=5V
——
IC
1
100
COMMON EMITTER
VCE=5V
Ta=25℃
0.1
0.2
0.4
0.6
0.8
10
0.25
1.0
2
100
Cob/Cib
——
VCB/VEB
COLLECTOR POWER DISSIPATION
PC (mW)
Cib
C
(pF)
Ta=25 ℃
CAPACITANCE
6
PC
250
f=1MHz
IE=0/IC=0
10
4
8
COLLECTOR CURRENT
BASE-EMMITER VOLTAGE VBE (V)
Cob
1
——
IC
10
12
125
150
(mA)
Ta
200
150
100
50
0
0.1
0.1
1
REVERSE VOLTAGE
10
V
(V)
30
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
(℃ )
The curve above is for reference only.
https://www.microdiode.com
Rev:2018A0
Page :3
BC847
Outlitne Drawing
SOT-23 Package Outline Dimensions
L
L1
E
E1
θ
1
e
Symbol
A
A1
b
c
D
E
E1
E1
e
L
L1
θ
Dimensions In Millimeters
Min
Typ
Max
1.00
1.40
0.10
0.35
0.50
0.10
0.20
2.70
2.90
3.10
1.40
1.60
2.4
2.80
1.90
0.10
0.30
0.4
0°
10°
Suggested Pad Layout
0.037
0.95
0.037
0.95
Note:
1.Controlling dimension:in/millimeters.
2.General tolerance: ±0.05mm.
3.The pad layout is for reference purposes only.
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Important Notice and Disclaimer
Microdiode Electronics (Jiangsu) reserves the right to make changes to this document and its
products and specifications at any time without notice. Customers should obtain and confirm the
latest product information and specifications before final design,purchase or use.
Microdiode Electronics (Jiangsu) makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, not does Microdiode Electronics
(Jiangsu) assume any liability for application assistance or customer product design. Microdiode
Electronics (Jiangsu) does not warrant or accept any liability with products which are purchased
or used for any unintended or unauthorized application.
No license is granted by implication or otherwise under any intellectual property rights of
Microdiode Electronics (Jiangsu).
Microdiode Electronics (Jiangsu) products are not authorized for use as critical components
in life support devices or systems without express written approval of Microdiode Electronics
(Jiangsu).
https://www.microdiode.com
Rev:2018A0
Page :4
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