BC847C

BC846,847,848 SOT-23 Plastic-Encapsulate Transistor TRANSISTOR (NPN) BC846A, B, C BC847A, B, C BC848A, B, C SOT-23 1. BASE 2. EMITTER FEATURES  Ideally suited for automatic insertion  For Switching and AF Amplifier Applications 3. COLLECTOR PACKAGE SPECIFICATIONS Package Reel Size SOT-23 Reel DIA. (mm) Q'TY/Reel (pcs) Box Size (mm) QTY/Box (pcs) Carton Size (mm) Q'TY/Carton (pcs) 330 3000 190×190×190 45000 400×400×220 180000 7' MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO Parameter Value Collector-Base Voltage V BC846 BC847 BC848 VCEO 80 50 30 Collector-Emitter Voltage V BC846 BC847 BC848 VEBO Emitter-Base Voltage IC Unit 65 45 30 6 V Collector Current –Continuous 0.1 A PC* Collector Power Dissipation 200 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65-150 ℃ DEVICE MARKING BC846A=1A; BC846B=1B; BC846C=1C; BC847A=1E; BC847B=1F; BC847C=1G; BC848A=1J; BC848B=1K: BC848C=1L https://www.microdiode.com Rev:2025A4 Page :1 BC846,847,848 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Symbol Parameter Collector-base breakdown voltage Test conditions VCBO IC= 10µA, IE=0 65 VCEO IC= 10mA, IB=0 VEBO IE= 10µA, IC=0 45 Collector cut-off current ICBO DC current gain VCB=50 V , IE=0 IEBO VEB=5 V , IC=0 hFE VCE= 5V, IC= 2mA BC846A,847A,848A BC846B,847B,848B V 0.1 μA 0.1 μA VCB=30 V , IE=0 BC848 Emitter cut-off current 6 VCB=70 V , IE=0 BC846 BC847 V 30 BC848 Emitter-base breakdown voltage V 30 BC846 BC847 Max Unit 50 BC848 Collector-emitter breakdown voltage Typ 80 BC846 BC847 Min BC846C,847C,848C 110 220 200 450 420 800 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB= 5mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=100mA, IB= 5mA 1.1 V Transition frequency Collector output capacitance fT Cob VCE= 5 V, IC= 10mA f=100MHz 100 VCB=10V,f=1MHz MHz 4.5 pF The above data are for reference only. https://www.microdiode.com Rev:2025A4 Page :2 BC846,847,848 Typical Characteristics Static Characteristic (mA) 10 COMMON EMITTER Ta=25℃ 8 —— IC COMMON EMITTER VCE= 5V 1000 DC CURRENT GAIN IC 18uA 16uA 6 14uA 12uA 4 Ta=100℃ hFE 20uA COLLECTOR CURRENT hFE 3000 10uA 8uA Ta=25℃ 100 6uA 2 4uA IB=2uA 0 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VBEsat —— 1000 6 10 7 1 VCEsat IC —— IC 100 (mA) IC 500 β=20 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) β=20 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) 10 COLLECTOR CURRENT VCE (V) 800 Ta=25℃ 600 Ta=100 ℃ 400 200 0.1 1 10 COLLECTOR CURREMT IC 100 —— IC Ta=100 ℃ 100 Ta=25℃ 10 0.1 100 1 10 COLLECTOR CURREMT (mA) VBE fT 500 100 (mA) IC T =2 5℃ a TRANSITION FREQUENCY 10 T =1 00℃ a COLLECTOR CURRENT IC fT (mA) (MHz) COMMON EMITTER VCE=5V —— IC 1 100 COMMON EMITTER VCE=5V Ta=25℃ 0.1 0.2 0.4 0.6 0.8 10 0.25 1.0 2 100 Cob/Cib —— VCB/VEB COLLECTOR POWER DISSIPATION PC (mW) Cib C (pF) Ta=25 ℃ CAPACITANCE 6 PC 250 f=1MHz IE=0/IC=0 10 4 8 COLLECTOR CURRENT BASE-EMMITER VOLTAGE VBE (V) Cob 1 —— IC 10 12 125 150 (mA) Ta 200 150 100 50 0 0.1 0.1 1 REVERSE VOLTAGE 10 V (V) 30 0 25 50 75 AMBIENT TEMPERATURE 100 Ta (℃ ) The curve above is for reference only. https://www.microdiode.com Rev:2025A4 Page :3 BC846,847,848 Outlitne Drawing SOT-23 Package Outline Dimensions θ L L1 E E1 Symbol 1 e A A1 b c D E E1 e L L1 θ Dimensions In Millimeters Min Typ Max 0.65 1.40 0.20 0.00 0.30 0.55 0.20 0.08 2.70 3.10 1.15 1.65 2.80 2.10 1.70 2.10 0.15 0.50 0.35 0° 0.70 12° Suggested Pad Layout 0.037 0.95 0.037 0.95 Note: 1.Controlling dimension:in/millimeters. 2.General tolerance: ±0.05mm. 3.The pad layout is for reference purposes only. 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Important Notice and Disclaimer Microdiode Semiconductor(Shenzhen) reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design, purchase or use. Microdiode Semiconductor(Shenzhen) makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Microdiode Semiconductor(Shenzhen) assume any liability for application assistance or customer product design. Microdiode Semiconductor(Shenzhen) does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of Microdiode Semiconductor(Shenzhen). Microdiode Semiconductor(Shenzhen) products are not authorized for use as critical components in life support devices or systems without express written approval of Microdiode Semiconductor(Shenzhen). https://www.microdiode.com Rev:2025A4 Page :4