MCP6042T-I/SN

MCP6041/2/3/4 600 nA, Rail-to-Rail Input/Output Op Amps Features Description • • • • • • • • • The MCP6041/2/3/4 family of operational amplifiers (op amps) from Microchip Technology Inc. operate with a single supply voltage as low as 1.4V, while drawing less than 1 µA (maximum) of quiescent current per amplifier. These devices are also designed to support rail-to-rail input and output operation. This combination of features supports battery-powered and portable applications. Low Quiescent Current: 600 nA/amplifier (typical) Rail-to-Rail Input/Output Gain Bandwidth Product: 14 kHz (typical) Wide Supply Voltage Range: 1.4V to 6.0V Unity Gain Stable Available in Single, Dual, and Quad Chip Select (CS) with MCP6043 Available in 5-lead and 6-lead SOT-23 Packages Temperature Ranges: - Industrial: -40°C to +85°C - Extended: -40°C to +125°C Applications • • • • The MCP6041/2/3/4 family operational amplifiers are offered in single (MCP6041), single with Chip Select (CS) (MCP6043), dual (MCP6042), and quad (MCP6044) configurations. The MCP6041 device is available in the 5-lead SOT-23 package, and the MCP6043 device is available in the 6-lead SOT-23 package. Toll Booth Tags Wearable Products Temperature Measurement Battery Powered Design Aids • • • • • The MCP6041/2/3/4 amplifiers have a gain-bandwidth product of 14 kHz (typical) and are unity gain stable. These specifications make these op amps appropriate for low frequency applications, such as battery current monitoring and sensor conditioning. Package Types SPICE Macro Models FilterLab® Software MAPS (Microchip Advanced Part Selector) Analog Demonstration and Evaluation Boards Application Notes Typical Application VDD 10 VOUT MCP604X 1 M I DD NC 1 VIN– 2 7 VDD VIN– 2 VIN+ 3 6 VOUT VIN+ 3 VOUT 1 IDD 100 k 8 NC VDD – VOUT = ----------------------------------------- 10 V/V    10   High Side Battery Current Sensor  2001-2013 Microchip Technology Inc. 5 NC MCP6041 SOT-23-5 • MCP6141/2/3/4: G = +10 Stable Op Amps MCP6043 PDIP, SOIC, MSOP NC 1 VSS 4 Related Devices 1.4V to 6.0V MCP6041 PDIP, SOIC, MSOP 5 VDD 4 VIN– MCP6042 PDIP, SOIC, MSOP VOUT 1 VIN+ 3 VOUTA 1 8 VDD VINA– 2 7 VOUTB VINA– 2 6 VINB– VINA+ 3 VSS 4 5 VINB+ 5 NC 6 VDD 5 CS 4 VIN– MCP6044 PDIP, SOIC, TSSOP VOUTA 1 VINA+ 3 7 VDD 6 VOUT MCP6043 SOT-23-6 VSS 2 VSS 2 VIN+ 3 VSS 4 8 CS VDD 4 14 VOUTD 13 VIND– 12 VIND+ 11 VSS VINB+ 5 10 VINC+ VINB– 6 9 VINC– VOUTB 7 8 VOUTC DS21669D-page 1 MCP6041/2/3/4 1.0 ELECTRICAL CHARACTERISTICS † Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. Absolute Maximum Ratings † VDD – VSS ........................................................................7.0V Current at Input Pins .....................................................±2 mA Analog Inputs (VIN+, VIN–) ............. VSS – 1.0V to VDD + 1.0V All Other Inputs and Outputs .......... VSS – 0.3V to VDD + 0.3V Difference Input voltage ...................................... |VDD – VSS| Output Short Circuit Current ..................................continuous Current at Output and Supply Pins ............................±30 mA Storage Temperature.................................... –65°C to +150°C Junction Temperature.................................................. +150°C ESD protection on all pins (HBM; MM)  4 kV; 200V †† See Section 4.1 “Rail-to-Rail Input” DC ELECTRICAL CHARACTERISTICS Electrical Characteristics: Unless otherwise indicated, VDD = +1.4V to +5.5V, VSS = GND, TA = 25°C, VCM = VDD/2, VOUT  VDD/2, VL = VDD/2, and RL = 1 Mto VL (refer to Figure 1-2 and Figure 1-3). Parameters Sym Min Typ Max Units Conditions Input Offset VOS -3 — +3 mV VOS/TA — ±2 — µV/°C VCM = VSS, TA= -40°C to +85°C VOS/TA — ±15 — µV/°C VCM = VSS, TA= +85°C to +125°C PSRR 70 85 — dB IB — 1 — pA Industrial Temperature IB — 20 100 pA TA = +85° Extended Temperature IB — 1200 5000 pA TA = +125° Input Offset Current IOS — 1 — pA Common Mode Input Impedance ZCM — 1013||6 — ||pF Differential Input Impedance ZDIFF — 1013||6 — ||pF Common-Mode Input Range VCMR VSS0.3 — VDD+0.3 V Common-Mode Rejection Ratio CMRR 62 80 — dB VDD = 5V, VCM = -0.3V to 5.3V CMRR 60 75 — dB VDD = 5V, VCM = 2.5V to 5.3V CMRR 60 80 — dB VDD = 5V, VCM = -0.3V to 2.5V AOL 95 115 — dB RL = 50 k to VL, VOUT = 0.1V to VDD0.1V VOL, VOH VSS + 10 — VDD  10 mV RL = 50 k to VL, 0.5V input overdrive VOVR VSS + 100 — VDD  100 mV RL = 50 k to VL, AOL 95 dB Input Offset Voltage Drift with Temperature Power Supply Rejection VCM = VSS VCM = VSS Input Bias Current and Impedance Input Bias Current Common Mode Open-Loop Gain DC Open-Loop Gain (large signal) Output Maximum Output Voltage Swing Linear Region Output Voltage Swing Output Short Circuit Current ISC — 2 — mA VDD = 1.4V ISC — 20 — mA VDD = 5.5V VDD 1.4 — 6.0 V (Note 1) IQ 0.3 0.6 1.0 µA IO = 0 Power Supply Supply Voltage Quiescent Current per Amplifier Note 1: All parts with date codes November 2007 and later have been screened to ensure operation at VDD = 6.0V. However, the other minimum and maximum specifications are measured at 1.4V and/or 5.5V. DS21669D-page 2  2001-2013 Microchip Technology Inc. MCP6041/2/3/4 AC ELECTRICAL CHARACTERISTICS Electrical Characteristics: Unless otherwise indicated, VDD = +1.4V to +5.5V, VSS = GND, TA = 25°C, VCM = VDD/2, VOUT  VDD/2, VL = VDD/2, RL = 1 Mto VL, and CL = 60 pF (refer to Figure 1-2 and Figure 1-3). Parameters Sym Min Typ Max Units Conditions AC Response Gain Bandwidth Product GBWP — 14 — kHz Slew Rate SR — 3.0 — V/ms Phase Margin PM — 65 — ° Input Voltage Noise Eni — 5.0 — Input Voltage Noise Density eni — 170 — nV/Hz f = 1 kHz Input Current Noise Density ini — 0.6 — fA/Hz f = 1 kHz G = +1 V/V Noise µVP-P f = 0.1 Hz to 10 Hz MCP6043 CHIP SELECT (CS) ELECTRICAL CHARACTERISTICS Electrical Characteristics: Unless otherwise indicated, VDD = +1.4V to +5.5V, VSS = GND, TA = 25°C, VCM = VDD/2, VOUT  VDD/2, VL = VDD/2, RL = 1 Mto VL, and CL = 60 pF (refer to Figure 1-2 and Figure 1-3). Parameters Sym Min Typ Max Units Conditions CS Logic Threshold, Low VIL VSS — VSS+0.3 V CS Input Current, Low ICSL — 5 — pA CS Logic Threshold, High VIH VDD–0.3 — VDD V CS Input Current, High ICSH — 5 — pA CS = VDD ISS — -20 — pA CS = VDD IOLEAK — 20 — pA CS = VDD CS Low to Amplifier Output Turn-on Time tON — 2 50 ms G = +1V/V, CS = 0.3V to VOUT = 0.9VDD/2 CS High to Amplifier Output High-Z tOFF — 10 — µs G = +1V/V, CS = VDD–0.3V to VOUT = 0.1VDD/2 VHYST — 0.6 — V VDD = 5.0V CS Low Specifications CS = VSS CS High Specifications CS Input High, GND Current Amplifier Output Leakage, CS High Dynamic Specifications Hysteresis VIL CS VIH tOFF tON VOUT High-Z High-Z ISS -20 pA (typical) ICS 5 pA (typical) -0.6 µA (typical) -20 pA (typical) FIGURE 1-1: Chip Select (CS) Timing Diagram (MCP6043 only).  2001-2013 Microchip Technology Inc. DS21669D-page 3 MCP6041/2/3/4 TEMPERATURE CHARACTERISTICS Electrical Characteristics: Unless otherwise indicated, VDD = +1.4V to +5.5V, VSS = GND. Parameters Sym Min Typ Max Units Conditions TA -40 — +85 °C Industrial Temperature parts Temperature Ranges Specified Temperature Range TA -40 — +125 °C Extended Temperature parts Operating Temperature Range TA -40 — +125 °C (Note 1) Storage Temperature Range TA -65 — +150 °C Thermal Package Resistances Thermal Resistance, 5L-SOT-23 JA — 256 — °C/W Thermal Resistance, 6L-SOT-23 JA — 230 — °C/W Thermal Resistance, 8L-PDIP JA — 85 — °C/W Thermal Resistance, 8L-SOIC JA — 163 — °C/W Thermal Resistance, 8L-MSOP JA — 206 — °C/W Thermal Resistance, 14L-PDIP JA — 70 — °C/W Thermal Resistance, 14L-SOIC JA — 120 — °C/W Thermal Resistance, 14L-TSSOP JA — 100 — °C/W Note 1: 1.1 The MCP6041/2/3/4 family of Industrial Temperature op amps operates over this extended range, but with reduced performance. In any case, the internal Junction Temperature (TJ) must not exceed the Absolute Maximum specification of +150°C. Test Circuits The test circuits used for the DC and AC tests are shown in Figure 1-2 and Figure 1-3. The bypass capacitors are laid out according to the rules discussed in Section 4.6 “Supply Bypass”. VDD VIN RN 0.1 µF 1 µF VOUT MCP604X CL VDD/2 RG RL RF VL FIGURE 1-2: AC and DC Test Circuit for Most Non-Inverting Gain Conditions. VDD VDD/2 RN 0.1 µF 1 µF VOUT MCP604X CL VIN RG RL RF VL FIGURE 1-3: AC and DC Test Circuit for Most Inverting Gain Conditions. DS21669D-page 4  2001-2013 Microchip Technology Inc. MCP6041/2/3/4 2.0 TYPICAL PERFORMANCE CURVES Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. 18% -3 -2 2 -8 8 1000 500 0 TA = +125°C TA = +85°C TA = +25°C TA = -40°C -1000 -1500 4% 2% 24% 22% 20% 18% 16% 14% 12% 10% 8% 6% 4% 2% 0% -28 -24 -20 -16 -12 -8 -4 0 Input Offset Voltage Drift (µV/°C) 4 239 Samples 1 Representative Lot TA = +85°C to +125°C VDD = 5.5V VCM = VSS -2000 -28 -24 -20 -16 -12 -8 -4 0 Input Offset Voltage Drift (µV/°C) 4 FIGURE 2-5: Input Offset Voltage Drift with TA = +25°C to +125°C and VDD = 5.5V. 2000 VDD = 1.4V Representative Part -500 6% -32 Input Offset Voltage (µV) 1500 VDD = 5.5V Representative Part 1000 500 0 TA = +125°C TA = +85°C TA = +25°C TA = -40°C -500 -1000 -1500 Common Mode Input Voltage (V) FIGURE 2-3: Input Offset Voltage vs. Common Mode Input Voltage with VDD = 1.4V.  2001-2013 Microchip Technology Inc. 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -0.2 -0.4 -2000 1.0 Input Offset Voltage (µV) 1500 8% -32 10 FIGURE 2-2: Input Offset Voltage Drift with TA = -40°C to +85°C. 2000 10% FIGURE 2-4: Input Offset Voltage Drift with TA = +85°C to +125°C and VDD = 1.4V. Input Offset Voltage. -6 -4 -2 0 2 4 6 Input Offset Voltage Drift (µV/°C) 12% 0% 3 1124 Samples TA = -40°C to +85°C VDD = 1.4V VCM = VSS -10 14% 0.5 12% 11% 10% 9% 8% 7% 6% 5% 4% 3% 2% 1% 0% -1 0 1 Input Offset Voltage (mV) 245 Samples 1 Representative Lot TA = +85°C to +125°C VDD = 1.4V VCM = VSS 16% 0.0 Percentage of Occurrences FIGURE 2-1: Percentage of Occurrences 1124 Samples VDD = 1.4V and 5.5V VCM = VSS -0.5 10% 9% 8% 7% 6% 5% 4% 3% 2% 1% 0% Percentage of Occurrences Percentage of Occurrences Note: Unless otherwise indicated, TA = +25°C, VDD = +1.4V to +6.0V, VSS = GND, VCM = VDD/2, VOUT  VDD/2, VL = VDD/2, RL = 1 M to VL, and CL = 60 pF. Common Mode Input Voltage (V) FIGURE 2-6: Input Offset Voltage vs. Common Mode Input Voltage with VDD = 5.5V. DS21669D-page 5 MCP6041/2/3/4 Note: Unless otherwise indicated, TA = +25°C, VDD = +1.4V to +6.0V, VSS = GND, VCM = VDD/2, VOUT  VDD/2, VL = VDD/2, RL = 1 M to VL, and CL = 60 pF. 6 Input, Output Voltages (V) 450 VDD = 1.4V 400 350 VDD = 5.5V 300 250 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Output Voltage (V) FIGURE 2-7: Output Voltage. Input Offset Voltage vs. 4 VIN 2 1 0 Input Noise Voltage Density (nV/Hz) VDD = 5.0V G = +2 V/V -1 0 5 Time 10 (5 ms/div) 15 20 25 FIGURE 2-10: The MCP6041/2/3/4 family shows no phase reversal. 300 f = 1 kHz VDD = 5.0V 250 200 150 100 50 FIGURE 2-8: vs. Frequency. 5.5 5.0 4.5 4.0 3.5 3.0 2.5 Common Mode Input Voltage (V) Input Noise Voltage Density 90 2.0 1000 1.5 10 100 Frequency (Hz) 1.0 1 -0.5 0.1 0.5 0 100 FIGURE 2-11: Input Noise Voltage Density vs. Common Mode Input Voltage. 100 Referred to Input 80 95 PSRR, CMRR (dB) CMRR, PSRR (dB) VOUT 3 Input Noise Voltage Density (nV/—Hz) 1000 5 0.0 Input Offset Voltage (µV) 500 70 60 50 PSRR– PSRR+ CMRR 40 PSRR (VCM = VSS) 90 85 80 CMRR (VDD = 5.0V, VCM = -0.3V to +5.3V) 75 30 20 70 0.1 FIGURE 2-9: Frequency. DS21669D-page 6 1 10 Frequency (Hz) 100 CMRR, PSRR vs. 1000 -50 -25 FIGURE 2-12: Temperature. 0 25 50 75 100 Ambient Temperature (°C) 125 CMRR, PSRR vs. Ambient  2001-2013 Microchip Technology Inc. MCP6041/2/3/4 Note: Unless otherwise indicated, TA = +25°C, VDD = +1.4V to +6.0V, VSS = GND, VCM = VDD/2, VOUT  VDD/2, VL = VDD/2, RL = 1 M to VL, and CL = 60 pF. Input Bias and Offset Currents (pA) 10000 10k VDD = 5.5V VCM = VDD 1k 1000 100 IB 10 | IOS | 1 1 0.1 0.1 45 55 65 75 85 95 105 115 Ambient Temperature (°C) 125 FIGURE 2-13: Input Bias, Offset Currents vs. Ambient Temperature. -60 Phase 60 -90 40 -120 20 -150 0 -180 Open-Loop Gain, Phase vs. 120 130 120 110 100 RL = 50 kΩ VDD = 5.0V VOUT = 0.1V to VDD - 0.1V 80 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Power Supply Voltage (V) 5.0 5.5 FIGURE 2-15: DC Open-Loop Gain vs. Power Supply Voltage.  2001-2013 Microchip Technology Inc. VDD = 5.5V 110 100 VDD = 1.4V 90 80 70 1k 10k 1.E+03 1.E+04 Load Resistance (:) FIGURE 2-17: Load Resistance. DC Open-Loop Gain (dB) DC Open-Loop Gain (dB) 0.1 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Common Mode Input Voltage (V) 140 1.0 | IOS | 11 60 100 1.E+02 140 90 TA = +85°C VOUT = 0.1V to VDD – 0.1V -20 -210 0.001 0.1 1.E+ 1 1.E+ 10 1.E+ 100 1.E+ 1k 10k 1.E- 0.01 1.E- 1.E1.E+ 100k 1.E+ 03 02 01 Frequency 00 01 (Hz) 02 03 04 05 FIGURE 2-14: Frequency. 10 10 130 -30 80 IB TA = +125°C 100 100 FIGURE 2-16: Input Bias, Offset Currents vs. Common Mode Input Voltage. 0 Gain Open-Loop Phase (°) Open-Loop Gain (dB) 120 100 VDD = 5.5V 1k 1000 DC Open-Loop Gain (dB) Input Bias and Offset Currents (pA) 10k 10000 100k 1.E+05 DC Open-Loop Gain vs. RL = 50 k 130 120 VDD = 5.5V 110 100 VDD = 1.4V 90 80 0.00 0.05 0.10 0.15 0.20 Output Voltage Headroom; VDD – VOH or VOL – VSS (V) 0.25 FIGURE 2-18: DC Open-Loop Gain vs. Output Voltage Headroom. DS21669D-page 7 MCP6041/2/3/4 FIGURE 2-19: Channel-to-Channel Separation vs. Frequency (MCP6042 and MCP6044 only). PM (G = +1) 14 90 18 80 16 70 12 60 10 50 GBWP 8 40 6 30 4 20 2 10 VDD = 1.4V 0 -50 -25 0 25 50 75 100 Ambient Temperature (°C) 0.7 0.6 0.5 0.4 0.3 TA = +125°C TA = +85°C TA = +25°C TA = -40°C 0.2 0.1 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Power Supply Voltage (V) FIGURE 2-21: Quiescent Current vs. Power Supply Voltage. DS21669D-page 8 5.5 5.0 4.5 4.0 12 80 70 60 10 50 GBWP 8 40 6 30 4 20 2 10 VDD = 5.5V -50 -25 0 25 50 75 100 Ambient Temperature (°C) 0 125 FIGURE 2-23: Gain Bandwidth Product, Phase Margin vs. Ambient Temperature with VDD = 5.5V. 35 0.8 Quiescent Current (µA/Amplifier) 14 0 0 125 FIGURE 2-20: Gain Bandwidth Product, Phase Margin vs. Ambient Temperature with VDD = 1.4V. 90 PM (G = +1) Phase Margin (°) 16 Common Mode Input Voltage FIGURE 2-22: Gain Bandwidth Product, Phase Margin vs. Common Mode Input Voltage. Phase Margin (°) Gain Bandwidth Product (kHz) 18 3.5 10k 1.E+04 3.0 1k 1.E+03 Frequency (Hz) Gain Bandwidth Product (kHz) 60 100 1.E+02 VDD = 5.0V RL = 100 kΩ -0.5 Input Referred 2.5 70 2.0 80 GBWP 1.5 90 1.0 100 100 90 80 70 60 50 40 30 20 10 0 PM (G = +1) 0.5 110 Output Short Circuit Current Magnitude (mA) Channel to Channel Separation (dB) 120 20 18 16 14 12 10 8 6 4 2 0 0.0 Gain Bandwidth Product (kHz) 130 Phase Margin (°) Note: Unless otherwise indicated, TA = +25°C, VDD = +1.4V to +6.0V, VSS = GND, VCM = VDD/2, VOUT  VDD/2, VL = VDD/2, RL = 1 M to VL, and CL = 60 pF. 30 25 TA = -40°C TA = +25°C TA = +85°C TA = +125°C 20 15 10 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Power Supply Voltage (V) FIGURE 2-24: Output Short Circuit Current vs. Power Supply Voltage.  2001-2013 Microchip Technology Inc. MCP6041/2/3/4 Note: Unless otherwise indicated, TA = +25°C, VDD = +1.4V to +6.0V, VSS = GND, VCM = VDD/2, VOUT  VDD/2, VL = VDD/2, RL = 1 M to VL, and CL = 60 pF. 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 Output Voltage Headroom, VDD – V OH or V OL – V SS (mV) Output Voltage Headroom; VDD – V OH or V OL – V SS (mV) 1000 100 VDD – VOH VOL – VSS 10 1 0.01 0.1 1 Output Current Magnitude (mA) 10 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 VOL – VSS VDD – VOH -50 -25 0 25 50 75 100 Ambient Temperature (°C) 125 FIGURE 2-28: Output Voltage Headroom vs. Ambient Temperature. 10 VDD = 5.5V Maximum Output Voltage Swing (V P-P ) Slew Rate (V/ms) FIGURE 2-25: Output Voltage Headroom vs. Output Current Magnitude. VDD = 5.5V RL = 50 kΩ High-to-Low Low-to-High VDD = 1.4V -50 -25 0 25 50 75 Ambient Temperature (°C) FIGURE 2-26: Temperature. 100 25 Output Voltage (5mV/div) VDD = 1.4V 100 1k 1.E+02 1.E+03 Frequency (Hz) 10k 1.E+04 FIGURE 2-29: Maximum Output Voltage Swing vs. Frequency. 25 G = +1 V/V RL = 50 kΩ 20 1 0.1 10 1.E+01 125 Slew Rate vs. Ambient VDD = 5.5V G = -1 V/V RL = 50 kΩ 20 15 Voltage (5 mV/div) 15 10 10 5 5 0 0 -5 -5 -10 -10 -15 -15 -20 -20 -25 -25 0.0 0.1 0.2 0.3 Time 0.4 (100 0.5 µs/div) 0.6 0.7 FIGURE 2-27: Pulse Response. 0.8 0.9 1.0 Small Signal Non-inverting  2001-2013 Microchip Technology Inc. 0.0 0.1 0.2 FIGURE 2-30: Response. 0.3 Time 0.4 (100 0.5 µs/div) 0.6 0.7 0.8 0.9 1.0 Small Signal Inverting Pulse DS21669D-page 9 MCP6041/2/3/4 Note: Unless otherwise indicated, TA = +25°C, VDD = +1.4V to +6.0V, VSS = GND, VCM = VDD/2, VOUT  VDD/2, VL = VDD/2, RL = 1 M to VL, and CL = 60 pF. 5.0 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 2 FIGURE 2-31: Pulse Response. 7.5 5.0 2.5 0.0 -2.5 -5.0 -7.5 -10.0 -12.5 -15.0 -17.5 -20.0 3 Time 4 (15ms/div) 6 7 8 9 Large Signal Non-inverting CS VDD = 5.0V Output On VOUT High-Z 0 1 High-Z 2 10 3 Time 4 (15 ms/div) 6 7 8 9 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -0.5 10 FIGURE 2-32: Chip Select (CS) to Amplifier Output Response Time (MCP6043 only). Input Current Magnitude (A) 10m 1.E-02 1m 1.E-03 100µ 1.E-04 10µ 1.E-05 1µ 1.E-06 100n 1.E-07 10n 1.E-08 1n 1.E-09 100p 1.E-10 10p 1.E-11 1p 1.E-12 0 1 2 3 Time 4 (15ms/div) 6 7 FIGURE 2-34: Response. Internal CS Switch Output (V) 1 Output Voltage (V) 0 CS Voltage (V) VDD = 5.0V G = -1 V/V RL = 50 kΩ 4.5 Output Voltage (V) Output Voltage (V) 5.0 VDD = 5.0V G = +1 V/V RL = 50 kΩ 4.5 8 10 Large Signal Inverting Pulse 3.0 2.5 9 VDD = 5.0V VOUT Active 2.0 1.5 CS Low-to-High CS High-to-Low 1.0 0.5 Hysteresis 0.0 VOUT High-Z -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 CS Input Voltage (V) FIGURE 2-35: (MCP6043 only). Chip Select (CS) Hysteresis +125°C +85°C +25°C -40°C -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.0 Input Voltage (V) FIGURE 2-33: Input Current vs. Input Voltage (below VSS). DS21669D-page 10  2001-2013 Microchip Technology Inc. MCP6041/2/3/4 3.0 PIN DESCRIPTIONS Descriptions of the pins are listed in Table 3-1. TABLE 3-1: PIN FUNCTION TABLE MCP6041 MCP6042 MCP6043 MCP6044 PDIP, SOIC, MSOP SOT-23-5 PDIP, SOIC, MSOP PDIP, SOIC, MSOP SOT-23-6 PDIP, SOIC, TSSOP 6 1 1 6 1 1 VOUT, VOUTA Analog Output (op amp A) 2 4 2 2 4 2 VIN–, VINA– Inverting Input (op amp A) 3 3 3 3 3 3 VIN+, VINA+ Non-inverting Input (op amp A) 7 5 8 7 6 4 VDD — — 5 — — 5 VINB+ Non-inverting Input (op amp B) Symbol Description Positive Power Supply — — 6 — — 6 VINB– Inverting Input (op amp B) — — 7 — — 7 VOUTB Analog Output (op amp B) — — — — — 8 VOUTC Analog Output (op amp C) — — — — — 9 VINC– Inverting Input (op amp C) — — — — — 10 VINC+ 4 2 4 4 2 11 VSS — — — — — 12 VIND+ Non-inverting Input (op amp D) — — — — — 13 VIND– Inverting Input (op amp D) — — — — — 14 VOUTD Analog Output (op amp D) Non-inverting Input (op amp C) Negative Power Supply — — — 8 5 — CS Chip Select 1, 5, 8 — — 1, 5 — — NC No Internal Connection 3.1 Analog Outputs The output pins are low-impedance voltage sources. 3.2 Analog Inputs The non-inverting and inverting inputs are high-impedance CMOS inputs with low bias currents. 3.3 Chip Select Digital Input 3.4 Power Supply Pins The positive power supply pin (VDD) is 1.4V to 6.0V higher than the negative power supply pin (VSS). For normal operation, the other pins are at voltages between VSS and VDD. Typically, these parts are used in a single (positive) supply configuration. In this case, VSS is connected to ground and VDD is connected to the supply. VDD will need bypass capacitors. This is a CMOS, Schmitt-triggered input that places the part into a low power mode of operation.  2001-2013 Microchip Technology Inc. DS21669D-page 11 MCP6041/2/3/4 4.0 APPLICATIONS INFORMATION The MCP6041/2/3/4 family of op amps is manufactured using Microchip’s state of the art CMOS process. These op amps are unity gain stable and suitable for a wide range of general purpose, low-power applications. See Microchip’s related MCP6141/2/3/4 family of op amps for applications, at a gain of 10 V/V or higher, needing greater bandwidth. 4.1 Rail-to-Rail Input 4.1.1 dump any currents onto VDD. When implemented as shown, resistors R1 and R2 also limit the current through D1 and D2. VDD D1 V1 R1 R3 VSS – (minimum expected V1) 2 mA VSS – (minimum expected V2) R2 > 2 mA R1 > INPUT VOLTAGE AND CURRENT LIMITS The ESD protection on the inputs can be depicted as shown in Figure 4-1. This structure was chosen to protect the input transistors, and to minimize input bias current (IB). The input ESD diodes clamp the inputs when they try to go more than one diode drop below VSS. They also clamp any voltages that go too far above VDD; their breakdown voltage is high enough to allow normal operation, and low enough to bypass quick ESD events within the specified limits. Input Stage Bond V – IN Pad Bond Pad FIGURE 4-1: Structures. Simplified Analog Input ESD In order to prevent damage and/or improper operation of these amplifiers, the circuit must limit the currents (and voltages) at the input pins (see Absolute Maximum Ratings † at the beginning of Section 1.0 “Electrical Characteristics”). Figure 4-2 shows the recommended approach to protecting these inputs. The internal ESD diodes prevent the input pins (VIN+ and VIN–) from going too far below ground, and the resistors R1 and R2 limit the possible current drawn out of the input pins. Diodes D1 and D2 prevent the input pins (VIN+ and VIN–) from going too far above VDD, and DS21669D-page 12 FIGURE 4-2: Inputs. Protecting the Analog It is also possible to connect the diodes to the left of the resistor R1 and R2. In this case, the currents through the diodes D1 and D2 need to be limited by some other mechanism. The resistors then serve as in-rush current limiters; the DC current into the input pins (VIN+ and VIN–) should be very small. A significant amount of current can flow out of the inputs (through the ESD diodes) when the common mode voltage (VCM) is below ground (VSS); see Figure 2-33. Applications that are high impedance may need to limit the useable voltage range. VDD Bond Pad VSS VOUT R2 The MCP6041/2/3/4 op amps are designed to not exhibit phase inversion when the input pins exceed the supply voltages. Figure 2-10 shows an input voltage exceeding both supplies with no phase inversion. VIN+ Bond Pad MCP604X V2 PHASE REVERSAL 4.1.2 D2 4.1.3 NORMAL OPERATION The input stage of the MCP6041/2/3/4 op amps uses two differential input stages in parallel. One operates at a low common mode input voltage (VCM), while the other operates at a high VCM. With this topology, the device operates with a VCM up to 300 mV above VDD and 300 mV below VSS. The input offset voltage is measured at VCM = VSS – 0.3V and VDD + 0.3V to ensure proper operation. There are two transitions in input behavior as VCM is changed. The first occurs, when VCM is near VSS + 0.4V, and the second occurs when VCM is near VDD – 0.5V (see Figure 2-3 and Figure 2-6). For the best distortion performance with non-inverting gains, avoid these regions of operation.  2001-2013 Microchip Technology Inc. MCP6041/2/3/4 4.2 Rail-to-Rail Output 4.4 Capacitive Loads There are two specifications that describe the output swing capability of the MCP6041/2/3/4 family of op amps. The first specification (Maximum Output Voltage Swing) defines the absolute maximum swing that can be achieved under the specified load condition. Thus, the output voltage swings to within 10 mV of either supply rail with a 50 k load to VDD/2. Figure 2-10 shows how the output voltage is limited when the input goes beyond the linear region of operation. Driving large capacitive loads can cause stability problems for voltage feedback op amps. As the load capacitance increases, the feedback loop’s phase margin decreases and the closed-loop bandwidth is reduced. This produces gain peaking in the frequency response, with overshoot and ringing in the step response. A unity gain buffer (G = +1) is the most sensitive to capacitive loads, although all gains show the same general behavior. The second specification that describes the output swing capability of these amplifiers is the Linear Output Voltage Range. This specification defines the maximum output swing that can be achieved while the amplifier still operates in its linear region. To verify linear operation in this range, the large signal DC Open-Loop Gain (AOL) is measured at points inside the supply rails. The measurement must meet the specified AOL condition in the specification table. When driving large capacitive loads with these op amps (e.g., > 60 pF when G = +1), a small series resistor at the output (RISO in Figure 4-3) improves the feedback loop’s phase margin (stability) by making the output load resistive at higher frequencies. The bandwidth will be generally lower than the bandwidth with no capacitive load. RISO Output Loads and Battery Life The MCP6041/2/3/4 op amp family has outstanding quiescent current, which supports battery-powered applications. There is minimal quiescent current glitching when Chip Select (CS) is raised or lowered. This prevents excessive current draw, and reduced battery life, when the part is turned off or on. Heavy resistive loads at the output can cause excessive battery drain. Driving a DC voltage of 2.5V across a 100 k load resistor will cause the supply current to increase by 25 µA, depleting the battery 43 times as fast as IQ (0.6 µA, typical) alone. High frequency signals (fast edge rate) across capacitive loads will also significantly increase supply current. For instance, a 0.1 µF capacitor at the output presents an AC impedance of 15.9 k (1/2fC) to a 100 Hz sinewave. It can be shown that the average power drawn from the battery by a 5.0 Vp-p sinewave (1.77 Vrms), under these conditions, is EQUATION 4-1: PSupply = (VDD - VSS) (IQ + VL(p-p) f CL ) = (5V)(0.6 µA + 5.0Vp-p · 100Hz · 0.1µF) = 3.0 µW + 50 µW This will drain the battery 18 times as fast as IQ alone. MCP604X VIN VOUT CL FIGURE 4-3: Output Resistor, RISO Stabilizes Large Capacitive Loads. Figure 4-4 gives recommended RISO values for different capacitive loads and gains. The x-axis is the normalized load capacitance (CL/GN), where GN is the circuit’s noise gain. For non-inverting gains, GN and the Signal Gain are equal. For inverting gains, GN is 1+|Signal Gain| (e.g., -1 V/V gives GN = +2 V/V). 100,000 100k Recommended RISO (:) 4.3 10k 10,000 GN = +1 GN = +2 GN t +5 1k 1,000 10p 1.E+01 1n 10n 100p 1.E+02 1.E+03 1.E+04 Normalized Load Capacitance; C L/GN (F) FIGURE 4-4: Recommended RISO Values for Capacitive Loads. After selecting RISO for your circuit, double check the resulting frequency response peaking and step response overshoot. Modify RISO’s value until the response is reasonable. Bench evaluation and simulations with the MCP6041/2/3/4 SPICE macro model are helpful.  2001-2013 Microchip Technology Inc. DS21669D-page 13 MCP6041/2/3/4 4.5 MCP6043 Chip Select 4.8 The MCP6043 is a single op amp with Chip Select (CS). When CS is pulled high, the supply current drops to 50 nA (typical) and flows through the CS pin to VSS. When this happens, the amplifier output is put into a high impedance state. By pulling CS low, the amplifier is enabled. If the CS pin is left floating, the amplifier may not operate properly. Figure 1-1 shows the output voltage and supply current response to a CS pulse. 4.6 Supply Bypass With this family of operational amplifiers, the power supply pin (VDD for single supply) should have a local bypass capacitor (i.e., 0.01 µF to 0.1 µF) within 2 mm for good high frequency performance. It can use a bulk capacitor (i.e., 1 µF or larger) within 100 mm to provide large, slow currents. This bulk capacitor is not required for most applications and can be shared with nearby analog parts. 4.7 PCB Surface Leakage In applications where low input bias current is critical, printed circuit board (PCB) surface leakage effects need to be considered. Surface leakage is caused by humidity, dust or other contamination on the board. Under low humidity conditions, a typical resistance between nearby traces is 1012. A 5V difference would cause 5 pA of current to flow, which is greater than the MCP6041/2/3/4 family’s bias current at +25°C (1 pA, typical). The easiest way to reduce surface leakage is to use a guard ring around sensitive pins (or traces). The guard ring is biased at the same voltage as the sensitive pin. Figure 4-6 shows an example of this type of layout. Guard Ring VIN– VIN+ Unused Op Amps An unused op amp in a quad package (MCP6044) should be configured as shown in Figure 4-5. These circuits prevent the output from toggling and causing crosstalk. Circuit A sets the op amp at its minimum noise gain. The resistor divider produces any desired reference voltage within the output voltage range of the op amp; the op amp buffers that reference voltage. Circuit B uses the minimum number of components and operates as a comparator, but it may draw more current. ¼ MCP6044 (A) ¼ MCP6044 (B) VDD R1 VDD VDD R2 VREF FIGURE 4-6: for Inverting Gain. 1. 2. Example Guard Ring Layout Non-inverting Gain and Unity Gain Buffer: a) Connect the non-inverting pin (VIN+) to the input with a wire that does not touch the PCB surface. b) Connect the guard ring to the inverting input pin (VIN–). This biases the guard ring to the common mode input voltage. Inverting Gain and Transimpedance Gain (convert current to voltage, such as photo detectors) amplifiers: a) Connect the guard ring to the non-inverting input pin (VIN+). This biases the guard ring to the same reference voltage as the op amp (e.g., VDD/2 or ground). b) Connect the inverting pin (VIN–) to the input with a wire that does not touch the PCB surface. R2 VREF = V DD  -----------------R1 + R2 FIGURE 4-5: DS21669D-page 14 Unused Op Amps.  2001-2013 Microchip Technology Inc. MCP6041/2/3/4 4.9 4.9.1 Application Circuits 4.9.2 BATTERY CURRENT SENSING The MCP6041/2/3/4 op amps’ Common Mode Input Range, which goes 0.3V beyond both supply rails, supports their use in high-side and low-side battery current sensing applications. The very low quiescent current (0.6 µA, typical) helps prolong battery life, and the rail-to-rail output supports detection low currents. Figure 4-7 shows a high-side battery current sensor circuit. The 10 resistor is sized to minimize power losses. The battery current (IDD) through the 10 resistor causes its top terminal to be more negative than the bottom terminal. This keeps the Common mode input voltage of the op amp below VDD, which is within its allowed range. The output of the op amp will also be below VDD, which is within its Maximum Output Voltage Swing specification. The MCP6041/2/3/4 op amp is well suited for conditioning sensor signals in battery-powered applications. Figure 4-8 shows a two op amp instrumentation amplifier, using the MCP6042, that works well for applications requiring rejection of Common mode noise at higher gains. The reference voltage (VREF) is supplied by a low impedance source. In single supply applications, VREF is typically VDD/2. . RG VREF R1 IDD 1.4V to 6.0V R2 R2 R1 VOUT V2 V1 . INSTRUMENTATION AMPLIFIER ½ MCP6042 ½ MCP6042 VDD 10 100 k VOUT MCP604X 1 M R1 2R 1 V OUT =  V 1 – V2   1 + ------ + --------- + V REF  R2 RG  FIGURE 4-8: Two Op Amp Instrumentation Amplifier. V DD – VOUT I DD = ----------------------------------------- 10 V/V    10   FIGURE 4-7: Sensor. High-Side Battery Current  2001-2013 Microchip Technology Inc. DS21669D-page 15 MCP6041/2/3/4 5.0 DESIGN AIDS Microchip provides the basic design tools needed for the MCP6041/2/3/4 family of op amps. 5.1 SPICE Macro Model The latest SPICE macro model for the MCP6041/2/3/4 op amps is available on the Microchip web site at www.microchip.com. This model is intended to be an initial design tool that works well in the op amp’s linear region of operation over the temperature range. See the model file for information on its capabilities. Bench testing is a very important part of any design and cannot be replaced with simulations. Also, simulation results using this macro model need to be validated by comparing them to the data sheet specifications and characteristic curves. 5.2 FilterLab® Software Microchip’s FilterLab® software is an innovative software tool that simplifies analog active filter (using op amps) design. Available at no cost from the Microchip web site at www.microchip.com/filterlab, the FilterLab design tool provides full schematic diagrams of the filter circuit with component values. It also outputs the filter circuit in SPICE format, which can be used with the macro model to simulate actual filter performance. 5.3 • P/N SOIC14EV: 14-Pin SOIC/TSSOP/DIP Evaluation Board • MCP6XXX Amplifier Evaluation Board 1 • MCP6XXX Amplifier Evaluation Board 2 • MCP6XXX Amplifier Evaluation Board 3 • MCP6XXX Amplifier Evaluation Board 4 • Active Filter Demo Board Kit 5.5 Application Notes The following Microchip Application Notes are available on the Microchip web site at www.microchip.com/ appnotes and are recommended as supplemental reference resources: ADN003: “Select the Right Operational Amplifier for your Filtering Circuits”, DS21821 AN722: “Operational Amplifier Topologies and DC Specifications”, DS00722 AN723: “Operational Amplifier AC Specifications and Applications”, DS00723 AN884: “Driving Capacitive Loads With Op Amps”, DS00884 AN990: “Analog Sensor Conditioning Circuits – An Overview”, DS00990 These application notes and others are listed in the design guide: “Signal Chain Design Guide”, DS21825 MAPS (Microchip Advanced Part Selector) MAPS is a software tool that helps semiconductor professionals efficiently identify Microchip devices that fit a particular design requirement. Available at no cost from the Microchip website at www.microchip.com/ maps, the MAPS is an overall selection tool for Microchip’s product portfolio that includes Analog, Memory, MCUs and DSCs. Using this tool you can define a filter to sort features for a parametric search of devices and export side-by-side technical comparison reports. Helpful links are also provided for data sheets, purchase, and sampling of Microchip parts. 5.4 Analog Demonstration and Evaluation Boards Microchip offers a broad spectrum of Analog Demonstration and Evaluation Boards that are designed to help you achieve faster time to market. For a complete listing of these boards and their corresponding user’s guides and technical information, visit the Microchip web site at www.microchip.com/ analogtools. Some boards that are especially useful are: • P/N SOIC8EV: 8-Pin SOIC/MSOP/TSSOP/DIP Evaluation Board DS21669D-page 16  2001-2013 Microchip Technology Inc. MCP6041/2/3/4 6.0 PACKAGING INFORMATION 6.1 Package Marking Information Example: 5-Lead SOT-23 (MCP6041) XXNN Device I-Temp Code E-Temp Code MCP6041/T-E/OT SPNN 7XNN Note: Parts with date codes prior to November 2012 have their package markings in the SBNN format. Example: 6-Lead SOT-23 (MCP6043) Device XXNN MCP6043T-E/CH I-Temp Code E-Temp Code SCNN SDNN SC25 Example: 8-Lead MSOP XXXXXX 6043I YWWNNN 304256 8-Lead PDIP (300 mil) 8-Lead SOIC (150 mil) * OR MCP6041 I/P e3256 1304 Example: MCP6042 I/SN1304 256 XXXXXXXX XXXXYYWW NNN Legend: XX...X Y YY WW NNN e3 Example: MCP6041 I/P256 1304 XXXXXXXX XXXXXNNN YYWW Note: 7X25 OR MCP6042I SN e3 1304 256 Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information.  2001-2013 Microchip Technology Inc. DS21669D-page 17 MCP6041/2/3/4 Package Marking Information (Continued) Example: 14-Lead PDIP (300 mil) (MCP6044) MCP6044-I/P XXXXXXXXXXXXXX XXXXXXXXXXXXXX YYWWNNN 1304256 MCP6044 E/P e3 1304256 OR 14-Lead SOIC (150 mil) (MCP6044) Example: MCP6044ISL e3 I/SL^^ 1304256 XXXXXXXXXX XXXXXXXXXX YYWWNNN MCP6044 E/SL^^ e3 1304256 OR Example: 14-Lead TSSOP (MCP6044) XXXXXXXX YYWW 6044ST 1304 NNN 256 OR 6044EST 1304 256 DS21669D-page 18  2001-2013 Microchip Technology Inc. MCP6041/2/3/4        .#  #$ # / !- 0    #  1/ %## !# ## +22--- 2 / b N E E1 3 2 1 e e1 D A2 A c φ A1 L L1 3#   4# 5$8 %1 44"" 5 56 7 5 ( 4 !1# ()* 6$# ! 4 !1#  6, 9 #   : ! !1/ /  ; :  #!%%   : ( 6,  : > 4 !/  ; : = 4 !