1N4007L

Plastic-Encapsulate Diodes 1N4001L THRU 1N4007L Surface Mount General Purpose Silicon Rectifiers Reverse Voltage - 50 to 1000 V PINNING Forward Current - 1 A PIN FEATURES ▪For surface mounted applications ▪Low profile package ▪Glass Passivated Chip Junction ▪Ideal for automated placement ▪Lead free in comply with EU RoHS 2011/65/EU directives DESCRIPTION 1 Cathode 2 Anode 1 2 Top View Marking Code： A1-A7 Simplified outline SOD-123FL and symbol MECHANICAL DATA ▪Case: SOD-123FL ▪Terminals: Solderable per MIL-STD-750, Method 2026 ▪Approx. Weight: 15mg / 0.00053oz Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %. Symbols 1N4001L 1N4002L 1N4003L 1N4004L 1N4005L 1N4006L 1N4007L Units Parameter Maximum Repetitive Peak Reverse Voltage V RRM 50 100 200 400 600 800 1000 V Maximum RMS voltage V RMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage V DC 50 100 200 400 600 800 1000 V Maximum Average Forward Rectified Current at Ta = 65 °C I F(AV) 1 A Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method) I FSM 30 A Maximum Instantaneous Forward Voltage at 1 A VF 1.1 V IR 5 50 μA Cj 9 pF RθJA 120 °C/W T j , T stg -55 ~ +150 °C Maximum DC Reverse Current at Rated DC Blocking Voltage Typical Junction Capacitance Typical Thermal Resistance Ta = 25 °C Ta =125 °C 1） 2） Operating and Storage Temperature Range 1）Measured with I F = 0.5 A, I R = 1 A, I rr = 0.25 A. 2）P.C.B. mounted with 0.2 X 0.2" (5 X 5 mm) copper pad areas. GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P1 Plastic-Encapsulate Diodes 1N4001L THRU 1N4007L Fig.2 Typical Instaneous Reverse Characteristics Average Forward Current (A) 1.2 1.0 0.8 0.6 0.4 0.2 Single phase half-wave 60 Hz resistive or inductive load 0.0 25 50 75 100 125 150 175 Instaneous Reverse Current ( μ A) Fig.1 Forward Current Derating Curve 100 T J =150°C T J =125°C 10 T J =100°C 1.0 T J =75°C T J =50°C 0.1 T J =25°C 0.01 0 Junction Capacitance ( pF) 1.0 2 5° C °C 00 TJ TJ = =1 =1 50 °C 0.5 TJ Instaneous Forward Current (A) 600 800 Fig.4 Typical Junction Capacitance Fig.3 Typical Forward Characteristic 0.2 0.1 0.6 400 200 Instaneous Reverse Voltage (V) Ambient Temperature (°C) 100 T J =25°C 10 1 0.7 0.8 0.9 1.0 1.1 0.1 1.0 10 100 Reverse Voltage (V) Instaneous Forward Voltage (V) Peak Forward Surage Current (A) Fig.5 Maximum Non-Repetitive Peak Forward Surage Current 35 30 25 20 15 10 05 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 10 100 Number of Cycles GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P2