AC8P03C

AC8P03C -30V /-8A Power MOSFET C P03C 8P03C P General Description -30V /-8A Power MOSFET Very low on-resistance RDS(on) @ VGS=4.5 V Pb-free lead plating; RoHS compliant V DS -30 V RDS(on),TYP@VGS=10V RDS(on),TYP@VGS=4.5 ID 38.5 mΩ 60.5 mΩ -8 A Part ID Package Type Marking Tape and reel infomation AC8P03C SOP8 8P03 3000 Parameter 100% UIS Tested 100% Rg Tested Symbol Maximum Units Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS 20 ±V -8.0 TA=25°C Continuous Drain Current A ID -6.6 TA=70°C Pulsed Drain Current B IDM -12.8 Avalanche Current G IAR -2.6 Repetitive avalanche energy L=0.1mH G EAR -5.9 mJ 3.1 TA=25°C Power Dissipation A PD W 2 TA=70°C Junction and Storage Temperature Range A -55 to 150 TJ, TSTG °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Symbol t ≤ 10s RJA Maximum Junction-to-Ambient A Steady State Maximum Junction-to-Lead C Steady State www.asiachip.cn 第 1 页，共 5 页 RJL Typ Max Units 137 206 °C/W 275 330 °C/W 82 132 °C/W Rev0：Oct 2018 AC8P03C -30V /-8A Power MOSFET STATIC PARAMETERS Parameter Conditions BVDSS Drain-Source Breakdown Voltage ID = -250uA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS=-30V, VGS=0V Symbol Min Typ Max Units -30 V -1 uA -5 IGSS Gate-Body leakage current VDS = 0V, VGS = ±20V VGS(th) Gate Threshold Voltage VDS = VGS ID = 250A RDS(ON) Static Drain-Source OnResistance gFS VSD ±100 nA -1.8 -2.4 V VGS=-10V, ID=-8A 38.5 55.0 VGS=-4.5V, ID=-8A 60.5 78.7 Forward Transconductance VDS=-5V, ID=-8A 40 Diode Forward Voltage IS=-1A,VGS=0V -0.72 -1.2 mΩ -1 V -8 A Typ Max Units 760 927 pF 140 172 pF 95 113 pF 1.6 Ω Max Units Maximum Body-Diode Continuous Current IS S DYNAMIC PARAMETERS Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Conditions Min VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Symbol Parameter Qg (10V) Total Gate Charge Qg 4.5V) Total Gate Charge Conditions Min Typ 6.7 3.35 VGS=-10V, VDS=-15V, ID=-8A nC Qgs Gate Source Charge 2.24 Qgd Gate Drain Charge 3.2 tD(on) Turn-On DelayTime 7.5 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-8A, dI/dt=500A/s 15 ns Qrr Body Diode Reverse Recovery Charge IF=18A, dI/dt=500A/s 9.7 nC www.asiachip.cn VGS=-10V, VDS=-15V,RL=0.75Ω, RGEN=3Ω 6 21 ns 6.75 第 2 页，共 5 页 Rev0：Oct 2018 AC8P03C -30V /-8A Power MOSFET www.asiachip.cn 第 3 页，共 5 页 Rev0：Oct 2018 AC8P03C -30V /-8A Power MOSFET www.asiachip.cn 第 4 页，共 5 页 Rev0：Oct 2018 AC8P03C -30V /-8A Power MOSFET www.asiachip.cn 第 5 页，共 5 页 Rev0：Oct 2018