AC10B03C

AC10B03C 30V /10A Power MOSFET C B03C 10B03C B General Description 30V /10A Power MOSFET Very low on-resistance RDS(on) @ VGS=4.5 V Pb-free lead plating; RoHS compliant V DS 30 V RDS(on),TYP@VGS=10V RDS(on),TYP@VGS=4.5 ID 12.3 mΩ 19.3 mΩ 10 A Part ID Package Type Marking Tape and reel infomation AC10B03C SOP8 10B03 3000 Parameter 100% UIS Tested 100% Rg Tested Symbol Maximum Units Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 ±V 10.0 TA=25°C Continuous Drain Current A ID 8.0 TA=70°C Pulsed Drain Current B IDM 16.0 Avalanche Current G IAR 3.2 Repetitive avalanche energy L=0.1mH G EAR 7.4 mJ 2 TA=25°C Power Dissipation A PD W 1.3 TA=70°C Junction and Storage Temperature Range A -55 to 150 TJ, TSTG °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Symbol t ≤ 10s RJA Maximum Junction-to-Ambient A Steady State Maximum Junction-to-Lead C Steady State www.asiachip.cn 第 1 页，共 5 页 RJL Typ Max Units 43 65 °C/W 87 105 °C/W 26 42 °C/W Rev0：Oct 2018 AC10B03C 30V /10A Power MOSFET STATIC PARAMETERS Parameter Conditions BVDSS Drain-Source Breakdown Voltage ID = -250uA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V Symbol Min Typ Max Units 30 V 1 uA 5 IGSS Gate-Body leakage current VDS = 0V, VGS = ±20V VGS(th) Gate Threshold Voltage VDS = VGS ID = 250A RDS(ON) Static Drain-Source OnResistance ±100 nA 1.9 2.5 V VGS=-10V, ID=10A 12.3 17.5 VGS=4.5V, ID=10A 19.3 25.0 1.3 mΩ gFS Forward Transconductance VDS=5V, ID=10A 50 VSD Diode Forward Voltage IS=1A,VGS=45V 0.72 1 V 10 A Typ Max Units 760 927 pF 125 153 pF 70 83 pF 1.5 Ω Max Units Maximum Body-Diode Continuous Current IS S DYNAMIC PARAMETERS Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Conditions Min VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Symbol Parameter Qg (10V) Total Gate Charge Qg 4.5V) Total Gate Charge Conditions Min Typ 6.6 3.3 VGS=10V, VDS=15V, ID=10A nC Qgs Gate Source Charge 2.1 Qgd Gate Drain Charge 3 tD(on) Turn-On DelayTime 3.5 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-8A, dI/dt=500A/s 7 ns Qrr Body Diode Reverse Recovery Charge IF=18A, dI/dt=500A/s 8 nC www.asiachip.cn VGS=10V, VDS=15V,RL=0.75Ω, RGEN=3Ω 2.8 9.8 ns 3.15 第 2 页，共 5 页 Rev0：Oct 2018 AC10B03C 30V /10A Power MOSFET www.asiachip.cn 第 3 页，共 5 页 Rev0：Oct 2018 AC10B03C 30V /10A Power MOSFET www.asiachip.cn 第 4 页，共 5 页 Rev0：Oct 2018 AC10B03C 30V /10A Power MOSFET www.asiachip.cn 第 5 页，共 5 页 Rev0：Oct 2018