30V/5.1A P-Channel MOSFET
General Description
The MOSFET uses advanced trench technology to provide
excellent RDS(ON) with low gate charge. This device is
suitable for use as a load switch or in PWM applications
Part ID
ACC5P03A
Package Type
SOP8
Marking
5P03
ACC5P03A
V DS
-30
RDS(on),TYP@VGS=4.5
60
RDS(on),TYP@VGS=10V
ID
Tape and reel
infomation
3000PCS/Reel
V
45
mΩ
-5.1
A
mΩ
100% UIS Tested
100% Rg Tested
Absolute Maximum Ratings T =25°C unless otherwise noted
Drain-Source Voltage
Parameter
Gate-Source Voltage
Continuous Drain Current A
Pulsed Drain Current B
Symbol
VDS
TA=25°C
TA=70°C
Avalanche Current G
Repetitive avalanche energy L=0.1mH G
Power Dissipation A
Junction and Storage Temperature Range
VGS
ID
IDM
IAR
TA=25°C
TA=70°C
EAR
PD
TJ, TSTG
Maximum
Units
±20
V
-30
-5.1
-3.5
-25
16
16
1.4
0.9
-55 to 150
V
A
mJ
W
°C
ACC5P03A
30V/5.1A P-Channel MOSFET
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
t ≤ 10s
Maximum Junction-to-Lead C
Steady State
Maximum Junction-to-Ambient A
STATIC PARAMETERS
Symbol
Parameter
Steady State
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
RDS(ON)
Static Drain-Source On-Resistance
gFS
Forward Transconductance
IS
Maximum Body-Diode Continuous Current
Gate Threshold Voltage
Diode Forward Voltage
DYNAMIC PARAMETERS
Symbol
Parameter
Total Gate Charge
Total Gate Charge
Gate Source Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
tf
trr
Qrr
VDS = VGS ID = 250A
VGS = -4.5V, ID = -2.5A
100
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
-30
90
-0.7
VGS=-10V, VDS=-4.5V, ID=-3A
Typ
-1
45
10
-0.7
Min
Typ
645
IF=-3A, dI/dt=500A/s
Max
±100
-1.4
60
80
-1.
55
Units
V
uA
nA
V
mΩ
S
V
-2
A
Max
Units
80
pF
pF
pF
4
7.5
12
Ω
Min
Typ
Max
Units
14
7
nC
1.5
11
IF=-3A, dI/dt=500A/s
°C/W
-1
1.3
VGS=-10V, VDS=-4.5V, RL= 1Ω,
°C/W
88
60
IS = -0.7A,VGS = 0V
Conditions
°C/W
-5
VDS = -5V, ID = -5A
Gate Drain Charge
Turn-On Rise Time
Min
Units
120
62
VGS = -2.5V, ID =- 1.8A
VGS=0V, VDS=0V, f=1MHz
Qgs
Qgd
VDS = 0V, VGS = ±20V
Gate resistance
SWITCHING PARAMETERS
Qg 4.5V)
70
Max
VDS = -30V, VGS = 0V TJ = 55°C
VGS=0V, VDS=-15V, f=1MHz
Reverse Transfer Capacitance
Qg (10V)
VDS = -30V, VGS = 0V TJ = 25°C
Output Capacitance
Crss
Symbol
ID = -250uA, VGS = 0V
Conditions
Input Capacitance
Rg
RJL
Parameter
Ciss
Coss
RJA
Conditions
Drain-Source Breakdown Voltage
VSD
Typ
Electrical Characteristics (TJ=25°C unless otherwise noted)
BVDSS
VGS(th)
Symbol
22
5.5
60
7
22
19
11
5.3
55
ns
ns
nC
30V/5.1A P-Channel MOSFET
ACC5P03A
30V/5.1A P-Channel MOSFET
ACC5P03A
30V/5.1A P-Channel MOSFET
ACC5P03A
30V/5.1A P-Channel MOSFET
NOTE
1. ALL DIMENSIONS ARE IN MILLMETERS.
2. DIMENSIONS ARE INCLUSIVE OF PLATING.
3. PACKAGE BODY SIZES EXCLUDE MOLD FLASH AND GATE
BURRS.
MOLD FLASH AT THE NON-LEAD SIDES SHOULD BE LESS THAN
6 MILS EACH.
4. DIMENSION L IS MEASURED IN GAUGE PLANE.
5. CONTROLLING DIMENSION IS MILLIMETER.
CONVERTED INCH DIMENSIONS ARE NOT NECESSARILY EXACT.
ACC5P03A
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