AC5C03C

AC5C03C -30V /-5A Power MOSFET C C03C 5C03C C General Description -30V /-5A Power MOSFET Very low on-resistance RDS(on) @ VGS=4.5 V Pb-free lead plating; RoHS compliant V DS -30 V RDS(on),TYP@VGS=10V RDS(on),TYP@VGS=4.5 ID 51.8 mΩ 81.4 mΩ -5 A Part ID Package Type Marking Tape and reel infomation AC5C03C SOP8 5C03 3000 Parameter 100% UIS Tested 100% Rg Tested Symbol Maximum Units Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS 20 ±V -5.0 TA=25°C Continuous Drain Current A ID -4.0 TA=70°C Pulsed Drain Current B IDM -8.0 Avalanche Current G IAR -1.6 Repetitive avalanche energy L=0.1mH G EAR -3.7 mJ 2 TA=25°C Power Dissipation A PD W 1.3 TA=70°C Junction and Storage Temperature Range A -55 to 150 TJ, TSTG °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Symbol t ≤ 10s RJA Maximum Junction-to-Ambient A Steady State Maximum Junction-to-Lead C Steady State www.asiachip.cn 第 1 页，共 5 页 RJL Typ Max Units 185 277 °C/W 370 444 °C/W 111 177 °C/W Rev0：Oct 2018 AC5C03C -30V /-5A Power MOSFET STATIC PARAMETERS Parameter Conditions BVDSS Drain-Source Breakdown Voltage ID = -250uA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS=-30V, VGS=0V Symbol Min Typ Max Units -30 V -1 uA -5 IGSS Gate-Body leakage current VDS = 0V, VGS = ±20V VGS(th) Gate Threshold Voltage VDS = VGS ID = 250A RDS(ON) Static Drain-Source OnResistance gFS VSD ±100 nA -1.9 -2.5 V VGS=-10V, ID=-5A 51.8 74.0 VGS=-4.5V, ID=-5A 81.4 105.8 Forward Transconductance VDS=-5V, ID=-5A 55 Diode Forward Voltage IS=-1A,VGS=0V -0.72 -1.3 mΩ -1 V -5 A Typ Max Units 520 634 pF 100 123 pF 65 77 pF 1.1 Ω Max Units Maximum Body-Diode Continuous Current IS S DYNAMIC PARAMETERS Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Conditions Min VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Symbol Parameter Qg (10V) Total Gate Charge Qg 4.5V) Total Gate Charge Conditions Min Typ 4.6 2.3 VGS=-10V, VDS=-15V, ID=-5A nC Qgs Gate Source Charge 1.54 Qgd Gate Drain Charge 2.2 tD(on) Turn-On DelayTime 5.5 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-8A, dI/dt=500A/s 11 ns Qrr Body Diode Reverse Recovery Charge IF=18A, dI/dt=500A/s 5.3 nC www.asiachip.cn VGS=-10V, VDS=-15V,RL=0.75Ω, RGEN=3Ω 4.4 15.4 ns 4.95 第 2 页，共 5 页 Rev0：Oct 2018 AC5C03C -30V /-5A Power MOSFET www.asiachip.cn 第 3 页，共 5 页 Rev0：Oct 2018 AC5C03C -30V /-5A Power MOSFET www.asiachip.cn 第 4 页，共 5 页 Rev0：Oct 2018 AC5C03C -30V /-5A Power MOSFET www.asiachip.cn 第 5 页，共 5 页 Rev0：Oct 2018