30V/95A N-Channel MOSFET
General Description
N-Channel,5V Logic Level Control
Enhancement mode
Very low on-resistance RDS(on) @ VGS=4.5 V
Pb-free lead plating; RoHS compliant
Part ID
ACD95N03A
Package Type
Marking
DFN5x6
95N03
ACD95N03A
V DS
V(RB)DSS
IS
4.2
mΩ
ID
95
A
RDS(on),TYP@VGS=4.5
Tape and reel
infomation
3000PCS/Reel
ID
Drain-Source breakdown voltage
Continuous drain current@VGS=10V
IDM
Pulse drain current tested ①
PD
Maximum power dissipation
EAS
VGS
TSTG TJ
Avalanche energy, single pulsed ②
Gate-Source voltage
Symbol
R JC
R JA
Parameter
Thermal Resistance-Junction to Case
Thermal Resistance Junction-Ambient
mΩ
Rating
Unit
95
A
30
CT =25°
V
95
A
CT =25°
300
A
CT =25°
105
CT =100°
70
Storage and operating temperaturerange
Thermal Characteristics
5.9
100% UIS Tested
100% Rg Tested
Parameter
Diode continuous forward current
V
RDS(on),TYP@VGS=10V
Maximum ratings, at TC =25°C, unless otherwise specified
Symbol
30
A
450
mJ
±20
V
W
-55 to 150
Typical
1.1
48
°C
Unit
°C/W
°C/W
ACD95N03A
30V/95A N-Channel MOSFET
Thermal Characteristics
Symbol
Parameter
Condition
Min
Typ
Max
Unit
Zero Gate Voltage Drain
Current(Tc=25℃)
VGS=0V ID=250μA
30
-
-
V
VDS=40V,VGS=0V
--
--
1
μA
VDS=40V,VGS=0V
--
--
100
μA
Gate-Body Leakage Current
VGS=±20V,VDS=0V
--
--
±100
nA
Gate Threshold Voltage
VDS=VGS,ID=250μA
1.0
1.8
2.5
V
VGS=10V, ID=30A
--
4.2
5
mΩ
VGS=4.5V, ID=20A
--
4.5
7.5
mΩ
--
1690
--
pF
--
155
--
11
--
nC
--
13
--
nS
--
nS
Static Electrical Characteristics @ T j= 25°C (unless otherwise stated)
V(BR)DSS
IDSS
IGSS
VGS(TH)
RDS(ON)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain
Current(Tc=125℃)
Drain-Source On-State Resistance
③
Dynamic Electrical Characteristics @ T j= 25°C (unless otherwise stated)
Ciss
Input Capacitance
CRSS
Reverse Transfer Capacitance
CDSS
Qg
Qgs
Qds
Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS=30V,VGS=0V,
f=1MHz
VDS=20V,ID=20A,
VGS=10V
Switching Characteristics
Td(on)
Turn-on Delay Time
Td(off)
Turn-Off Delay Time
tr
tf
Turn-on Rise Time
Turn-Off Fall Time
VDD=20V,
ID=10A,
RG=3.5Ω,
VGS=10V
Source- Drain Diode Characteristics@ T j= 25°C (unless otherwise stated)
VSD
Forward on voltage
Qrr
Reverse Recovery Charge
trr
NOTE:
Reverse Recovery Time
ISD=30A,VGS=0V
Tj=25℃,Isd=20A,
di/dt=500A/μs
---
--
210
--
pF
36
--
nC
16
--
--
--
15
--
--
14
--
--
20
0.8
22
1.2
13
① Repetitive rating; pulse width limited by max. junction temperature.
② Limited by TJmax, starting TJ = 25°C, L = 0.5mH,RG = 25Ω, IAS = 43A, VGS =10V. Part not recommended for use
above this value
③ Pulse width ≤ 300μs; duty cycle≤ 2%.
pF
nC
nS
nS
V
nS
nC
30V/95A N-Channel MOSFET
VDS, Drain -Source Voltage (V)
VGS, Gate -Source Voltage (V)
Fig2. VGS(TH) Gate -Source Voltage Vs. Tj
Tj - Junction Temperature (°C)
Fig4. Normalized On-Resistance Vs. Tj
ID - Drain Current (A)
Fig3. Typical Transfer Characteristics
ISD, Reverse Drain Current (A)
Tj - Junction Temperature (°C)
Normalized On Resistance
ID, Drain-Source
Source Current (A)
Fig1. Typical Output Characteristics
VGS(TH), Gate -Source Voltage (V)
ID, Drain-Source Current (A)
Typical Characteristics
ACD95N03A
VSD, Source-Drain Voltage (V)
Fig5. Typical Source-Drain Diode Forward Voltage
VDS, Drain -Source Voltage (V)
Fig6. Maximum Safe Operating Area
30V/95A N-Channel MOSFET
ACD95N03A
C, Capacitance (pF)
VGS, Gate-Source Voltage (V)
Typical Characteristics
Qg -Total Gate Charge (nC)
Fig8. Typical Gate Charge Vs.Gate-Source Voltage
ZqJC Normalized Transient
Thermal Resistance)
VDS , Drain-Source Voltage (V)
Fig7. Typical Capacitance Vs.Drain-Source Voltage
Pulse Width (s)
Fig9 . Normalized Maximum Transient Thermal Impedance
Fig10. Unclamped Inductive Test Circuit and waveforms
Fig11. Switching Time Test Circuit and waveforms
30V/95A N-Channel MOSFET
ACD95N03A
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Diode Recovery Test Circuit & Waveforms
30V/95A N-Channel MOSFET
DFN5×6 Package Outline Data
Customer Service
ACD95N03A
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