AC10N03C

AC10N03C 30V /10A Power MOSFET C N03C 10N03C N General Description 30V /10A Power MOSFET Very low on-resistance RDS(on) @ VGS=4.5 V Pb-free lead plating; RoHS compliant V DS 30 V RDS(on),TYP@VGS=10V RDS(on),TYP@VGS=4.5 ID 18.2 mΩ 28.6 mΩ 10 A Part ID Package Type Marking Tape and reel infomation AC10N03C SOP8 10N03 3000 Parameter 100% UIS Tested 100% Rg Tested Symbol Maximum Units Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 ±V 10.0 TA=25°C Continuous Drain Current A ID 7.5 TA=70°C Pulsed Drain Current B IDM 16.0 Avalanche Current G IAR 3.2 Repetitive avalanche energy L=0.1mH G EAR 7.4 mJ 3.1 TA=25°C Power Dissipation A PD W 2 TA=70°C Junction and Storage Temperature Range A -55 to 150 TJ, TSTG °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Symbol t ≤ 10s RJA Maximum Junction-to-Ambient A Steady State Maximum Junction-to-Lead C Steady State www.asiachip.cn 第 1 页，共 5 页 RJL Typ Max Units 65 97 °C/W 130 156 °C/W 39 62 °C/W Rev0：Oct 2018 AC10N03C 30V /10A Power MOSFET STATIC PARAMETERS Parameter Conditions BVDSS Drain-Source Breakdown Voltage ID = -250uA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V Symbol Min Typ Max Units 30 V 1 uA 5 IGSS Gate-Body leakage current VDS = 0V, VGS = ±20V VGS(th) Gate Threshold Voltage VDS = VGS ID = 250A RDS(ON) Static Drain-Source OnResistance ±100 nA 1.9 2.5 V VGS=-10V, ID=10A 18.2 26.0 VGS=4.5V, ID=10A 28.6 37.2 1.3 mΩ gFS Forward Transconductance VDS=5V, ID=10A 51 VSD Diode Forward Voltage IS=1A,VGS=46V 0.72 1 V 10 A Typ Max Units 550 671 pF 110 135 pF 55 65 pF 1.1 Ω Max Units Maximum Body-Diode Continuous Current IS S DYNAMIC PARAMETERS Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Conditions Min VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Symbol Parameter Qg (10V) Total Gate Charge Qg 4.5V) Total Gate Charge Conditions Min Typ 4.6 2.3 VGS=10V, VDS=15V, ID=10A nC Qgs Gate Source Charge 1.54 Qgd Gate Drain Charge 2.2 tD(on) Turn-On DelayTime 11 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-8A, dI/dt=500A/s 22 ns Qrr Body Diode Reverse Recovery Charge IF=18A, dI/dt=500A/s 14 nC www.asiachip.cn VGS=10V, VDS=15V,RL=0.75Ω, RGEN=3Ω 8.8 30.8 ns 9.9 第 2 页，共 5 页 Rev0：Oct 2018 AC10N03C 30V /10A Power MOSFET www.asiachip.cn 第 3 页，共 5 页 Rev0：Oct 2018 AC10N03C 30V /10A Power MOSFET www.asiachip.cn 第 4 页，共 5 页 Rev0：Oct 2018 AC10N03C 30V /10A Power MOSFET www.asiachip.cn 第 5 页，共 5 页 Rev0：Oct 2018