AC6D03C

AC6D03C 30V /6A Power MOSFET C D03C D 6D03C 6D03C-N 6D03C-P General Description 30V /6A Power MOSFET Very low on-resistance RDS(on) @ VGS=4.5 V Pb-free lead plating; RoHS compliant V DS 30 -30 V RDS(on),TYP@VGS=10V RDS(on),TYP@VGS=4.5 ID 29.4 51.8 mΩ 46.2 81.4 mΩ 6 -5.5 A Part ID Package Type Marking AC6D03C SOP8 6D03 Parameter Tape and reel infomation 100% UIS Tested 100% Rg Tested 3000 Maximum Symbol Units Drain-Source Voltage VDS 30 -30 V Gate-Source Voltage VGS 20 20 ±V 6.0 -5.5 5.0 -4.5 Continuous Drain Current A TA=25°C ID TA=70°C Pulsed Drain Current B IDM 9.6 -8.8 Avalanche Current G IAR 1.9 -1.8 Repetitive avalanche energy L=0.1mH G EAR 4.4 -4.0 2.0 2.0 1.3 1.3 TA=25°C Power Dissipation A PD TA=70°C Junction and Storage Temperature Range A mJ W -55 to 150 TJ, TSTG °C Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A Steady State Maximum Junction-to-Lead C Steady State 第 1 页，共 9 页 RJA RJL Typ Max Units 105 157 °C/W 210 252 °C/W 63 100 °C/W AC6D03C 30V /6A Power MOSFET N-Channel Electrical Characteristics STATIC PARAMETERS Parameter Conditions BVDSS Drain-Source Breakdown Voltage ID = -250uA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V IGSS Gate-Body leakage current VDS = 0V, VGS = ±20V VGS(th) Gate Threshold Voltage VDS = VGS ID = 250A RDS(ON) Static Drain-Source OnResistance Symbol Min Typ Max 30 V 1 5 uA ±100 nA 1.8 2.4 V VGS=-10V, ID=6A 29.4 42.0 VGS=4.5V, ID=6A 46.2 60.1 1.2 gFS Forward Transconductance VDS=5V, ID=6A 84 VSD Diode Forward Voltage IS=1A,VGS=19V 0.72 IS Units mΩ S 1 V 6 A Typ Max Units 250 305 pF 45 55 pF 35 41 pF 0.65 Ω Max Units Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Conditions Min VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Symbol Parameter Conditions Qg (10V) Total Gate Charge Qg 4.5V) Total Gate Charge Qgs Gate Source Charge 0.9 Qgd Gate Drain Charge 1.3 tD(on) Turn-On DelayTime 4.3 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-8A, dI/dt=500A/s 8.5 ns Qrr Body Diode Reverse Recovery Charge IF=18A, dI/dt=500A/s 2.2 nC Min Typ 2.6 1.3 VGS=10V, VDS=15V, ID=6A VGS=10V, VDS=15V,RL=0.75Ω, RGEN=3Ω nC 3.4 11.9 ns 3.8 第 2 页，共 9 页 AC6D03C 30V /6A Power MOSFET 第 3 页，共 9 页 AC6D03C 30V /6A Power MOSFET 第 4 页，共 9 页 AC6D03C 30V /6A Power MOSFET 第 5 页，共 9 页 AC6D03C 30V /6A Power MOSFET P-Channel Electrical Characteristics STATIC PARAMETERS Parameter Conditions BVDSS Drain-Source Breakdown Voltage ID = -250uA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS=-30V, VGS=0V IGSS Gate-Body leakage current VDS = 0V, VGS = ±20V VGS(th) Gate Threshold Voltage VDS = VGS ID = 250A RDS(ON) Static Drain-Source OnResistance gFS VSD Symbol IS Min Typ Max Units -30 V -1 5 uA ±100 nA -1.9 -2.5 V VGS=-10V, ID=-5.5A 51.8 74.0 VGS=-4.5V, ID=-5.5A 81.4 105.8 Forward Transconductance VDS=-5V, ID=-5.5A 51 Diode Forward Voltage IS=-1A,VGS=0V -0.72 -1.3 mΩ S -1 V -5.5 A Typ Max Units 520 634 pF 100 123 pF 65 77 pF 1.1 Ω Max Units Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Conditions Min VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Symbol Parameter Conditions Qg (10V) Total Gate Charge Qg 4.5V) Total Gate Charge Qgs Gate Source Charge 1.5 Qgd Gate Drain Charge 2.2 tD(on) Turn-On DelayTime 5.5 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-8A, dI/dt=500A/s 11.0 ns Qrr Body Diode Reverse Recovery Charge IF=18A, dI/dt=500A/s 5.3 nC Min Typ 4.6 2.3 VGS=-10V, VDS=-15V, ID=-5.5A VGS=-10V, VDS=-15V,RL=0.75Ω, RGEN=3Ω nC 4.4 15.4 ns 5.0 第 6 页，共 9 页 AC6D03C 30V /6A Power MOSFET 第 7 页，共 9 页 AC6D03C 30V /6A Power MOSFET 第 8 页，共 9 页 AC6D03C 30V /6A Power MOSFET 第 9 页，共 9 页