AC6B04C

AC6B04C 40V /6A Power MOSFET C B04C 6B04C B General Description 40V /6A Power MOSFET Very low on-resistance RDS(on) @ VGS=4.5 V Pb-free lead plating; RoHS compliant V DS 40 V RDS(on),TYP@VGS=10V RDS(on),TYP@VGS=4.5 ID 26.6 mΩ 41.8 mΩ 6 A Part ID Package Type Marking Tape and reel infomation AC6B04C SOP8 6B04 3000 Parameter 100% UIS Tested 100% Rg Tested Symbol Maximum Units Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS 20 ±V 6.0 TA=25°C Continuous Drain Current A ID 5.0 TA=70°C Pulsed Drain Current B IDM 9.6 Avalanche Current G IAR 1.9 Repetitive avalanche energy L=0.1mH G EAR 4.4 mJ 2 TA=25°C Power Dissipation A PD W 1.3 TA=70°C Junction and Storage Temperature Range A -55 to 150 TJ, TSTG °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Symbol t ≤ 10s RJA Maximum Junction-to-Ambient A Steady State Maximum Junction-to-Lead C Steady State www.asiachip.cn 第 1 页，共 5 页 RJL Typ Max Units 95 142 °C/W 190 228 °C/W 57 91 °C/W Rev0：Oct 2018 AC6B04C 40V /6A Power MOSFET STATIC PARAMETERS Parameter Conditions BVDSS Drain-Source Breakdown Voltage ID = -250uA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS=40V, VGS=0V Symbol Min Typ Max Units 40 V 1 uA 5 IGSS Gate-Body leakage current VDS = 0V, VGS = ±20V VGS(th) Gate Threshold Voltage VDS = VGS ID = 250A RDS(ON) Static Drain-Source OnResistance ±100 nA 2.3 3 V VGS=-10V, ID=6A 26.6 38.0 VGS=4.5V, ID=6A 41.8 54.3 1.5 mΩ gFS Forward Transconductance VDS=5V, ID=6A 89 VSD Diode Forward Voltage IS=1A,VGS=24V 0.72 1 V 6 A Typ Max Units 516 629 pF 82 100 pF 43 51 pF 0.7 Ω Max Units Maximum Body-Diode Continuous Current IS S DYNAMIC PARAMETERS Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Conditions Min VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Symbol Parameter Qg (10V) Total Gate Charge Qg 4.5V) Total Gate Charge Conditions Min Typ 4.3 2.15 VGS=10V, VDS=15V, ID=6A nC Qgs Gate Source Charge 0.98 Qgd Gate Drain Charge 1.4 tD(on) Turn-On DelayTime 9 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-8A, dI/dt=500A/s 18 ns Qrr Body Diode Reverse Recovery Charge IF=18A, dI/dt=500A/s 10 nC www.asiachip.cn VGS=10V, VDS=15V,RL=0.75Ω, RGEN=3Ω 7.2 25.2 ns 8.1 第 2 页，共 5 页 Rev0：Oct 2018 AC6B04C 40V /6A Power MOSFET www.asiachip.cn 第 3 页，共 5 页 Rev0：Oct 2018 AC6B04C 40V /6A Power MOSFET www.asiachip.cn 第 4 页，共 5 页 Rev0：Oct 2018 AC6B04C 40V /6A Power MOSFET www.asiachip.cn 第 5 页，共 5 页 Rev0：Oct 2018