AC30N04D

AC30N04D 40V /30A Power MOSFET D N04D 30N04D N General Description 40V /30A Power MOSFET Very low on-resistance RDS(on) @ VGS=4.5 V Pb-free lead plating; RoHS compliant V DS 40 V RDS(on),TYP@VGS=10V RDS(on),TYP@VGS=4.5 ID 6.6 mΩ 10.3 mΩ 30 A Part ID Package Type Marking Tape and reel infomation AC30N04D DFN5x6 30N04 3000 Parameter 100% UIS Tested 100% Rg Tested Symbol Maximum Units Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS 20 ±V 30.0 TA=25°C Continuous Drain Current A ID 30.0 TA=70°C Pulsed Drain Current B IDM 48.0 Avalanche Current G IAR 9.6 Repetitive avalanche energy L=0.1mH G EAR 22.1 mJ 36.5 TA=25°C Power Dissipation A PD W 14.5 TA=70°C Junction and Storage Temperature Range A -55 to 150 TJ, TSTG °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Symbol t ≤ 10s RJA Maximum Junction-to-Ambient A Steady State Maximum Junction-to-Lead C Steady State www.asiachip.cn 第 1 页，共 5 页 RJL Typ Max Units 23 35 °C/W 47 56 °C/W 14 22 °C/W Rev0：Oct 2018 AC30N04D 40V /30A Power MOSFET STATIC PARAMETERS Parameter Conditions BVDSS Drain-Source Breakdown Voltage ID = -250uA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS=40V, VGS=0V Symbol Min Typ Max Units 40 V 1 uA 5 IGSS Gate-Body leakage current VDS = 0V, VGS = ±20V VGS(th) Gate Threshold Voltage VDS = VGS ID = 250A RDS(ON) Static Drain-Source OnResistance gFS VSD ±100 nA 1.9 2.5 V VGS=10V, ID=20A 6.6 9.4 VGS=4.5V, ID=20A 10.3 13.4 Forward Transconductance VDS=5V, ID=20A 59 Diode Forward Voltage IS=1A,VGS=114V 0.72 1.3 mΩ 1 V 30 A Typ Max Units 1480 1805 pF 245 301 pF 13 15 pF 1.5 Ω Max Units Maximum Body-Diode Continuous Current IS S DYNAMIC PARAMETERS Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Conditions Min VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Symbol Parameter Qg (10V) Total Gate Charge Qg 4.5V) Total Gate Charge Conditions Min Typ 8.5 4.25 VGS=10V, VDS=15V, ID=20A nC Qgs Gate Source Charge 2.1 Qgd Gate Drain Charge 3 tD(on) Turn-On DelayTime 5.5 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-8A, dI/dt=500A/s 11 ns Qrr Body Diode Reverse Recovery Charge IF=18A, dI/dt=500A/s 21 nC www.asiachip.cn VGS=10V, VDS=15V,RL=0.75Ω, RGEN=3Ω 4.4 15.4 ns 4.95 第 2 页，共 5 页 Rev0：Oct 2018 AC30N04D 40V /30A Power MOSFET www.asiachip.cn 第 3 页，共 5 页 Rev0：Oct 2018 AC30N04D 40V /30A Power MOSFET www.asiachip.cn 第 4 页，共 5 页 Rev0：Oct 2018 AC30N04D 40V /30A Power MOSFET www.asiachip.cn 第 5 页，共 5 页 Rev0：Oct 2018