ACB5P03B

30V/5.1A P-Channel MOSFET General Description  The MOSFET uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications Part ID ACB5P03A Package Type SOT23-3 Marking A19T ACB5P03A V DS -30 RDS(on),TYP@VGS=4.5 60 RDS(on),TYP@VGS=10V ID Tape and reel infomation 3000PCS/Reel V 45 mΩ -5.1 A mΩ 100% UIS Tested 100% Rg Tested Absolute Maximum Ratings T =25°C unless otherwise noted Drain-Source Voltage Parameter Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B Symbol VDS TA=25°C TA=70°C Avalanche Current G Repetitive avalanche energy L=0.1mH G Power Dissipation A Junction and Storage Temperature Range VGS ID IDM IAR TA=25°C TA=70°C EAR PD TJ, TSTG Maximum Units ±20 V -30 -5.1 -3.5 -25 16 16 1.4 0.9 -55 to 150 V A mJ W °C ACB5P03A 30V/5.1A P-Channel MOSFET Thermal Characteristics Parameter Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Lead C Steady State Maximum Junction-to-Ambient A STATIC PARAMETERS Symbol Parameter Steady State IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance IS Maximum Body-Diode Continuous Current Gate Threshold Voltage Diode Forward Voltage DYNAMIC PARAMETERS Symbol Parameter Total Gate Charge Total Gate Charge Gate Source Charge tD(on) Turn-On DelayTime tr tD(off) tf trr Qrr VDS = VGS ID = 250A VGS = -4.5V, ID = -2.5A 100 Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge -30 90 -0.7 VGS=-10V, VDS=-4.5V, ID=-3A Typ -1 45 10 -0.7 Min Typ 645 IF=-3A, dI/dt=500A/s Max ±100 -1.4 60 80 -1. 55 Units V uA nA V mΩ S V -2 A Max Units 80 pF pF pF 4 7.5 12 Ω Min Typ Max Units 14 7 nC 1.5 11 IF=-3A, dI/dt=500A/s °C/W -1 1.3 VGS=-10V, VDS=-4.5V, RL= 1Ω, °C/W 88 60 IS = -0.7A,VGS = 0V Conditions °C/W -5 VDS = -5V, ID = -5A Gate Drain Charge Turn-On Rise Time Min Units 120 62 VGS = -2.5V, ID =- 1.8A VGS=0V, VDS=0V, f=1MHz Qgs Qgd VDS = 0V, VGS = ±20V Gate resistance SWITCHING PARAMETERS Qg 4.5V) 70 Max VDS = -30V, VGS = 0V TJ = 55°C VGS=0V, VDS=-15V, f=1MHz Reverse Transfer Capacitance Qg (10V) VDS = -30V, VGS = 0V TJ = 25°C Output Capacitance Crss Symbol ID = -250uA, VGS = 0V Conditions Input Capacitance Rg RJL Parameter Ciss Coss RJA Conditions Drain-Source Breakdown Voltage VSD Typ Electrical Characteristics (TJ=25°C unless otherwise noted) BVDSS VGS(th) Symbol 22 5.5 60 7 22 19 11 5.3 55 ns ns nC 30V/5.1A P-Channel MOSFET ACB5P03A 30V/5.1A P-Channel MOSFET ACB5P03A 30V/5.1A P-Channel MOSFET ACB5P03A 30V/5.1A P-Channel MOSFET SOT23-3 NOTE 1. ALL DIMENSIONS ARE IN MILLMETERS. 2. DIMENSIONS ARE INCLUSIVE OF PLATING. 3. PACKAGE BODY SIZES EXCLUDE MOLD FLASH AND GATE BURRS. MOLD FLASH AT THE NON-LEAD SIDES SHOULD BE LESS THAN 6 MILS EACH. 4. DIMENSION L IS MEASURED IN GAUGE PLANE. 5. CONTROLLING DIMENSION IS MILLIMETER. CONVERTED INCH DIMENSIONS ARE NOT NECESSARILY EXACT. ACB5P03A